JPS5563821A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5563821A
JPS5563821A JP13656878A JP13656878A JPS5563821A JP S5563821 A JPS5563821 A JP S5563821A JP 13656878 A JP13656878 A JP 13656878A JP 13656878 A JP13656878 A JP 13656878A JP S5563821 A JPS5563821 A JP S5563821A
Authority
JP
Japan
Prior art keywords
polycrystalline
thin film
metal
exposed
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13656878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6256670B2 (en, 2012
Inventor
Hiroshi Nakashiba
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13656878A priority Critical patent/JPS5563821A/ja
Publication of JPS5563821A publication Critical patent/JPS5563821A/ja
Publication of JPS6256670B2 publication Critical patent/JPS6256670B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP13656878A 1978-11-06 1978-11-06 Semiconductor device Granted JPS5563821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13656878A JPS5563821A (en) 1978-11-06 1978-11-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13656878A JPS5563821A (en) 1978-11-06 1978-11-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5563821A true JPS5563821A (en) 1980-05-14
JPS6256670B2 JPS6256670B2 (en, 2012) 1987-11-26

Family

ID=15178287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13656878A Granted JPS5563821A (en) 1978-11-06 1978-11-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563821A (en, 2012)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153757A (en) * 1980-04-30 1981-11-27 Nec Corp Semiconductor device
JPS5730366A (en) * 1980-07-30 1982-02-18 Oki Electric Ind Co Ltd Schottky transistor and manufacture thereof
JPS59112655A (ja) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp 半導体装置の製造方法
JPS59161060A (ja) * 1982-12-20 1984-09-11 レイセオン　カンパニ− 半導体デバイスの製造方法
JPS6037774A (ja) * 1983-08-10 1985-02-27 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6037787A (ja) * 1983-08-11 1985-02-27 Nec Corp 半導体装置
JPS60207375A (ja) * 1984-03-30 1985-10-18 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61160972A (ja) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk 半導体装置の製法
JPS6252965A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 半導体装置の製造方法
JPS62113470A (ja) * 1985-10-16 1987-05-25 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体層内に形成された装置に対する端子を作る方法
JPS62113465A (ja) * 1985-10-16 1987-05-25 テキサス　インスツルメンツ　インコ−ポレイテツド シヨツトキ−・ダイオ−ドとその製法
JPS62183178A (ja) * 1985-11-18 1987-08-11 テキサス　インスツルメンツ　インコ−ポレイテツド トランジスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272586A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Production of semiconductor device
JPS5310979A (en) * 1976-07-16 1978-01-31 Mitsubishi Electric Corp Semiconductor device and its production
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272586A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Production of semiconductor device
JPS5310979A (en) * 1976-07-16 1978-01-31 Mitsubishi Electric Corp Semiconductor device and its production
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153757A (en) * 1980-04-30 1981-11-27 Nec Corp Semiconductor device
JPS5730366A (en) * 1980-07-30 1982-02-18 Oki Electric Ind Co Ltd Schottky transistor and manufacture thereof
JPS59112655A (ja) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp 半導体装置の製造方法
JPS59161060A (ja) * 1982-12-20 1984-09-11 レイセオン　カンパニ− 半導体デバイスの製造方法
JPS6037774A (ja) * 1983-08-10 1985-02-27 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6037787A (ja) * 1983-08-11 1985-02-27 Nec Corp 半導体装置
JPS60207375A (ja) * 1984-03-30 1985-10-18 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61160972A (ja) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk 半導体装置の製法
JPS6252965A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 半導体装置の製造方法
JPS62113470A (ja) * 1985-10-16 1987-05-25 テキサス　インスツルメンツ　インコ−ポレイテツド 半導体層内に形成された装置に対する端子を作る方法
JPS62113465A (ja) * 1985-10-16 1987-05-25 テキサス　インスツルメンツ　インコ−ポレイテツド シヨツトキ−・ダイオ−ドとその製法
JPS62183178A (ja) * 1985-11-18 1987-08-11 テキサス　インスツルメンツ　インコ−ポレイテツド トランジスタ
JPH08102469A (ja) * 1985-11-18 1996-04-16 Texas Instr Inc <Ti> バイポーラ・トランジスタ

Also Published As

Publication number Publication date
JPS6256670B2 (en, 2012) 1987-11-26

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