JPS55501194A - - Google Patents

Info

Publication number
JPS55501194A
JPS55501194A JP50053980A JP50053980A JPS55501194A JP S55501194 A JPS55501194 A JP S55501194A JP 50053980 A JP50053980 A JP 50053980A JP 50053980 A JP50053980 A JP 50053980A JP S55501194 A JPS55501194 A JP S55501194A
Authority
JP
Japan
Prior art keywords
row
standard
decoders
column
columns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50053980A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55501194A publication Critical patent/JPS55501194A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP50053980A 1979-02-09 1980-01-28 Pending JPS55501194A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06010739 US4228528B2 (en) 1979-02-09 1979-02-09 Memory with redundant rows and columns

Publications (1)

Publication Number Publication Date
JPS55501194A true JPS55501194A (ja) 1980-12-25

Family

ID=21747172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50053980A Pending JPS55501194A (ja) 1979-02-09 1980-01-28

Country Status (5)

Country Link
US (1) US4228528B2 (ja)
EP (1) EP0023514A4 (ja)
JP (1) JPS55501194A (ja)
CA (1) CA1151294A (ja)
WO (1) WO1980001732A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349555A (en) * 1992-05-07 1994-09-20 Mitsubishi Denki Kabushiki Kaisha Redundancy circuit
US5386390A (en) * 1992-04-28 1995-01-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory with looped shift registers as row and column drivers

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DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
JPS57130298A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor integrated circuit memory and relieving method for its fault
JPS57150197A (en) * 1981-03-11 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Storage circuit
JPS6042560B2 (ja) * 1981-03-17 1985-09-24 日本電信電話株式会社 半導体記憶装置
US4383165A (en) * 1981-04-21 1983-05-10 Intel Corporation Method for aligning laser beam with fuses in integrated circuit
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
US4471472A (en) * 1982-02-05 1984-09-11 Advanced Micro Devices, Inc. Semiconductor memory utilizing an improved redundant circuitry configuration
JPS58208998A (ja) * 1982-05-28 1983-12-05 Toshiba Corp 半導体ｃｍｏｓメモリ
DE3221268C1 (de) * 1982-06-04 1983-12-15 Siemens AG, 1000 Berlin und 8000 München Speicherbaustein
US4485459A (en) * 1982-09-20 1984-11-27 Fairchild Camera & Instrument Corp. Redundant columns for byte wide memories
US4532611A (en) * 1982-11-01 1985-07-30 Motorola, Inc. Redundant memory circuit
USRE33266E (en) * 1982-11-24 1990-07-17 American Telephone And Telegraph Company, At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
JPS59142800A (ja) * 1983-02-04 1984-08-16 Fujitsu Ltd 半導体集積回路装置
US4556975A (en) * 1983-02-07 1985-12-03 Westinghouse Electric Corp. Programmable redundancy circuit
JPS59151400A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
JPS59151398A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
DE3485188D1 (de) * 1983-03-28 1991-11-28 Fujitsu Ltd Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen.
JPS59185098A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断回路内蔵型半導体メモリ装置
US4587638A (en) * 1983-07-13 1986-05-06 Micro-Computer Engineering Corporation Semiconductor memory device
US4639615A (en) * 1983-12-28 1987-01-27 At&T Bell Laboratories Trimmable loading elements to control clock skew
US4599709A (en) * 1984-02-17 1986-07-08 At&T Bell Laboratories Byte organized static memory
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
JPS6124250A (ja) * 1984-07-13 1986-02-01 Nippon Gakki Seizo Kk 半導体集積回路装置
ATE42647T1 (de) * 1984-08-02 1989-05-15 Siemens Ag Integrierter schreib-lesespeicher.
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
KR890003691B1 (ko) * 1986-08-22 1989-09-30 삼성전자 주식회사 블럭 열 리던던씨 회로
US5058069A (en) * 1987-03-03 1991-10-15 Thomson Semiconducteurs Device for addressing of redundant elements of an integrated circuit memory
FR2611972B1 (fr) * 1987-03-03 1989-05-19 Thomson Semiconducteurs Procede d'adressage d'elements redondants d'une memoire integree et dispositif permettant de mettre en oeuvre le procede
US4853758A (en) * 1987-08-12 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories Laser-blown links
FR2623653B1 (fr) * 1987-11-24 1992-10-23 Sgs Thomson Microelectronics Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant
KR910003594B1 (ko) * 1988-05-13 1991-06-07 삼성전자 주식회사 스페어컬럼(column)선택방법 및 회로
US5134584A (en) * 1988-07-22 1992-07-28 Vtc Incorporated Reconfigurable memory
JPH02310898A (ja) * 1989-05-25 1990-12-26 Nec Corp メモリ回路
US5321510A (en) * 1989-11-13 1994-06-14 Texas Instruments Incorporated Serial video processor
US5200922A (en) * 1990-10-24 1993-04-06 Rao Kameswara K Redundancy circuit for high speed EPROM and flash memory devices
US5276834A (en) * 1990-12-04 1994-01-04 Micron Technology, Inc. Spare memory arrangement
US5265054A (en) * 1990-12-14 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with precharged redundancy multiplexing
DE69122481T2 (de) * 1990-12-14 1997-02-20 Sgs Thomson Microelectronics Halbleiterspeicher mit Multiplex-Redundanz
KR940008208B1 (ko) * 1990-12-22 1994-09-08 삼성전자주식회사 반도체 메모리장치의 리던던트 장치 및 방법
US5233559A (en) * 1991-02-11 1993-08-03 Intel Corporation Row redundancy for flash memories
JP2754953B2 (ja) * 1991-05-17 1998-05-20 日本電気株式会社 半導体メモリ装置
JP2689768B2 (ja) * 1991-07-08 1997-12-10 日本電気株式会社 半導体集積回路装置
KR940006922B1 (ko) * 1991-07-11 1994-07-29 금성일렉트론 주식회사 반도체 메모리의 리던던시 회로
JP2991575B2 (ja) * 1992-10-08 1999-12-20 沖電気工業株式会社 半導体集積回路
US5859627A (en) * 1992-10-19 1999-01-12 Fujitsu Limited Driving circuit for liquid-crystal display device
US5513136A (en) * 1993-09-27 1996-04-30 Intel Corporation Nonvolatile memory with blocks and circuitry for selectively protecting the blocks for memory operations
US5712664A (en) 1993-10-14 1998-01-27 Alliance Semiconductor Corporation Shared memory graphics accelerator system
JPH10502181A (ja) * 1994-06-20 1998-02-24 ネオマジック・コーポレイション メモリインタフェースのないグラフィックスコントローラ集積回路
US5623420A (en) * 1994-11-16 1997-04-22 Sun Microsystems, Inc. Method and apparatus to distribute spare cells within a standard cell region of an integrated circuit
US5685995A (en) * 1994-11-22 1997-11-11 Electro Scientific Industries, Inc. Method for laser functional trimming of films and devices
US5532966A (en) * 1995-06-13 1996-07-02 Alliance Semiconductor Corporation Random access memory redundancy circuit employing fusible links
US5608678A (en) * 1995-07-31 1997-03-04 Sgs-Thomson Microelectronics, Inc. Column redundancy of a multiple block memory architecture
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5691946A (en) * 1996-12-03 1997-11-25 International Business Machines Corporation Row redundancy block architecture
US6025256A (en) * 1997-01-06 2000-02-15 Electro Scientific Industries, Inc. Laser based method and system for integrated circuit repair or reconfiguration
TW389908B (en) * 1998-01-16 2000-05-11 Winbond Electronics Corp Patching method capable of reducing the additional leakage current caused by manufacturing defects
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6049498A (en) * 1998-06-19 2000-04-11 Lucent Technologies, Inc. Double transistor switch for supplying multiple voltages to flash memory wordlines
JP3799197B2 (ja) 1999-08-26 2006-07-19 株式会社東芝 半導体記憶装置
US6421794B1 (en) 2000-03-09 2002-07-16 John T. Chen Method and apparatus for diagnosing memory using self-testing circuits
US6600341B2 (en) 2001-05-01 2003-07-29 Lattice Semiconductor Corp. Integrated circuit and associated design method using spare gate islands
US6814296B2 (en) * 2001-05-01 2004-11-09 Lattice Semiconductor Corp. Integrated circuit and associated design method with antenna error control using spare gates
US7733096B2 (en) * 2007-04-02 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of testing fuse elements for memory devices
JP6097775B2 (ja) 2015-02-16 2017-03-15 力晶科技股▲ふん▼有限公司 半導体記憶装置及び半導体集積回路装置

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US3721838A (en) * 1970-12-21 1973-03-20 Ibm Repairable semiconductor circuit element and method of manufacture
US3735368A (en) * 1971-06-25 1973-05-22 Ibm Full capacity monolithic memory utilizing defective storage cells
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US3845476A (en) * 1972-12-29 1974-10-29 Ibm Monolithic memory using partially defective chips
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US4051354A (en) * 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4162538A (en) * 1977-07-27 1979-07-24 Xerox Corporation Thin film programmable read-only memory having transposable input and output lines
US4198697A (en) * 1978-06-15 1980-04-15 Texas Instruments Incorporated Multiple dummy cell layout for MOS random access memory
US4195357A (en) * 1978-06-15 1980-03-25 Texas Instruments Incorporated Median spaced dummy cell layout for MOS random access memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386390A (en) * 1992-04-28 1995-01-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory with looped shift registers as row and column drivers
US5349555A (en) * 1992-05-07 1994-09-20 Mitsubishi Denki Kabushiki Kaisha Redundancy circuit

Also Published As

Publication number Publication date
WO1980001732A1 (en) 1980-08-21
US4228528A (en) 1980-10-14
EP0023514A4 (en) 1981-06-26
CA1151294A (en) 1983-08-02
US4228528B2 (en) 1992-10-06
US4228528B1 (ja) 1983-07-26
EP0023514A1 (en) 1981-02-11

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