JPS5533064A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5533064A JPS5533064A JP10584778A JP10584778A JPS5533064A JP S5533064 A JPS5533064 A JP S5533064A JP 10584778 A JP10584778 A JP 10584778A JP 10584778 A JP10584778 A JP 10584778A JP S5533064 A JPS5533064 A JP S5533064A
- Authority
- JP
- Japan
- Prior art keywords
- gap
- porous alumina
- film
- anodized
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To provide readily fine gap by utilizing the etching speed difference of masking material used for various treatments of semiconductor substrate.
CONSTITUTION: P-type and N-type conductivity layers are opened with the insulating film 202 of a semiconductor substrate 201, an aluminum layer 204 is laminated thereon, an Si3N4 205 is laminated thereon, and the film 205 is etched with resist mask 206. It is then anodized to form a non-porous alumina 207. When it is then etched with plasma etching by using CF4, a gap 208 occurs between the alumina 207 and the Si3N4 205. This width can be controlled by plasma treating time to provide 0.3 micron in width. Then, the resist is removed therefrom, and it is anodized in solution forming porous alumina at the substrate 201. Then, porous alumina 209 is formed at the gap 208. This anodization is executed until reaching the film 202, and the aluminum layer 204 is divided into two portions A and B by insulating.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10584778A JPS5533064A (en) | 1978-08-29 | 1978-08-29 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10584778A JPS5533064A (en) | 1978-08-29 | 1978-08-29 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5533064A true JPS5533064A (en) | 1980-03-08 |
Family
ID=14418398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10584778A Pending JPS5533064A (en) | 1978-08-29 | 1978-08-29 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533064A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51145274A (en) * | 1975-05-27 | 1976-12-14 | Fairchild Camera Instr Co | Method of manufacturing semiconductor element and structure of semiconductor used in that method |
-
1978
- 1978-08-29 JP JP10584778A patent/JPS5533064A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51145274A (en) * | 1975-05-27 | 1976-12-14 | Fairchild Camera Instr Co | Method of manufacturing semiconductor element and structure of semiconductor used in that method |
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