JPS5533064A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5533064A
JPS5533064A JP10584778A JP10584778A JPS5533064A JP S5533064 A JPS5533064 A JP S5533064A JP 10584778 A JP10584778 A JP 10584778A JP 10584778 A JP10584778 A JP 10584778A JP S5533064 A JPS5533064 A JP S5533064A
Authority
JP
Japan
Prior art keywords
gap
porous alumina
film
anodized
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10584778A
Other languages
Japanese (ja)
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP10584778A priority Critical patent/JPS5533064A/en
Publication of JPS5533064A publication Critical patent/JPS5533064A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To provide readily fine gap by utilizing the etching speed difference of masking material used for various treatments of semiconductor substrate.
CONSTITUTION: P-type and N-type conductivity layers are opened with the insulating film 202 of a semiconductor substrate 201, an aluminum layer 204 is laminated thereon, an Si3N4 205 is laminated thereon, and the film 205 is etched with resist mask 206. It is then anodized to form a non-porous alumina 207. When it is then etched with plasma etching by using CF4, a gap 208 occurs between the alumina 207 and the Si3N4 205. This width can be controlled by plasma treating time to provide 0.3 micron in width. Then, the resist is removed therefrom, and it is anodized in solution forming porous alumina at the substrate 201. Then, porous alumina 209 is formed at the gap 208. This anodization is executed until reaching the film 202, and the aluminum layer 204 is divided into two portions A and B by insulating.
COPYRIGHT: (C)1980,JPO&Japio
JP10584778A 1978-08-29 1978-08-29 Method of manufacturing semiconductor device Pending JPS5533064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10584778A JPS5533064A (en) 1978-08-29 1978-08-29 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10584778A JPS5533064A (en) 1978-08-29 1978-08-29 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5533064A true JPS5533064A (en) 1980-03-08

Family

ID=14418398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10584778A Pending JPS5533064A (en) 1978-08-29 1978-08-29 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533064A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145274A (en) * 1975-05-27 1976-12-14 Fairchild Camera Instr Co Method of manufacturing semiconductor element and structure of semiconductor used in that method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145274A (en) * 1975-05-27 1976-12-14 Fairchild Camera Instr Co Method of manufacturing semiconductor element and structure of semiconductor used in that method

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