JPS55166929A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55166929A
JPS55166929A JP7533479A JP7533479A JPS55166929A JP S55166929 A JPS55166929 A JP S55166929A JP 7533479 A JP7533479 A JP 7533479A JP 7533479 A JP7533479 A JP 7533479A JP S55166929 A JPS55166929 A JP S55166929A
Authority
JP
Japan
Prior art keywords
choline
water solution
solution
semiconductor device
utilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7533479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227537B2 (enExample
Inventor
Soji Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7533479A priority Critical patent/JPS55166929A/ja
Publication of JPS55166929A publication Critical patent/JPS55166929A/ja
Publication of JPS6227537B2 publication Critical patent/JPS6227537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP7533479A 1979-06-15 1979-06-15 Manufacture of semiconductor device Granted JPS55166929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7533479A JPS55166929A (en) 1979-06-15 1979-06-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7533479A JPS55166929A (en) 1979-06-15 1979-06-15 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55166929A true JPS55166929A (en) 1980-12-26
JPS6227537B2 JPS6227537B2 (enExample) 1987-06-15

Family

ID=13573245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7533479A Granted JPS55166929A (en) 1979-06-15 1979-06-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166929A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100388575C (zh) * 2003-03-17 2008-05-14 北京邮电大学 磷化铟基光电子器件中楔形腔和平行腔结构实现方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264878A (en) * 1975-11-26 1977-05-28 Toshiba Corp Etching of semiconductor wiring

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264878A (en) * 1975-11-26 1977-05-28 Toshiba Corp Etching of semiconductor wiring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100388575C (zh) * 2003-03-17 2008-05-14 北京邮电大学 磷化铟基光电子器件中楔形腔和平行腔结构实现方法

Also Published As

Publication number Publication date
JPS6227537B2 (enExample) 1987-06-15

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