JPS6227537B2 - - Google Patents
Info
- Publication number
- JPS6227537B2 JPS6227537B2 JP54075334A JP7533479A JPS6227537B2 JP S6227537 B2 JPS6227537 B2 JP S6227537B2 JP 54075334 A JP54075334 A JP 54075334A JP 7533479 A JP7533479 A JP 7533479A JP S6227537 B2 JPS6227537 B2 JP S6227537B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- solution
- aqueous solution
- etching solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7533479A JPS55166929A (en) | 1979-06-15 | 1979-06-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7533479A JPS55166929A (en) | 1979-06-15 | 1979-06-15 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55166929A JPS55166929A (en) | 1980-12-26 |
| JPS6227537B2 true JPS6227537B2 (enExample) | 1987-06-15 |
Family
ID=13573245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7533479A Granted JPS55166929A (en) | 1979-06-15 | 1979-06-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55166929A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388575C (zh) * | 2003-03-17 | 2008-05-14 | 北京邮电大学 | 磷化铟基光电子器件中楔形腔和平行腔结构实现方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5264878A (en) * | 1975-11-26 | 1977-05-28 | Toshiba Corp | Etching of semiconductor wiring |
-
1979
- 1979-06-15 JP JP7533479A patent/JPS55166929A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55166929A (en) | 1980-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0311092B2 (enExample) | ||
| EP0023146A2 (en) | Method of manufacturing a semiconductor device wherein first and second layers are formed | |
| JPS633437A (ja) | 半導体装置の製造方法 | |
| JPS6227537B2 (enExample) | ||
| KR100406298B1 (ko) | 유전체 소자 및 유전체 소자의 제조방법 | |
| JPH0451474Y2 (enExample) | ||
| US6645875B2 (en) | Method of processing metal and method of manufacturing semiconductor device using the metal | |
| JPH0298133A (ja) | 半導体基板の洗浄方法 | |
| JPS6027180B2 (ja) | 半導体装置の製造方法 | |
| JP4738626B2 (ja) | 半導体基板のエッチング方法 | |
| JPS6364904B2 (enExample) | ||
| JPS59175124A (ja) | 半導体装置の製造方法 | |
| JP2599485B2 (ja) | 半導体素子の評価方法 | |
| JP3401731B2 (ja) | 電荷測定方法 | |
| CN110520392B (zh) | 制造由玻璃支承件支承的金属薄膜的方法 | |
| JPS594027A (ja) | 半導体装置の製造方法 | |
| JPS6043831A (ja) | 半導体装置製造用エツチング液 | |
| JPS6119132A (ja) | 半導体装置の製造方法 | |
| JPS59178732A (ja) | 半導体装置の製造方法 | |
| JPH0160939B2 (enExample) | ||
| JPS61114536A (ja) | 半導体装置の製造方法 | |
| JPS57183057A (en) | Semiconductor device and manufacture thereof | |
| JPS58113375A (ja) | ドライエツチング方法 | |
| JPS5984576A (ja) | 半導体装置の製造方法 | |
| JPH0729711A (ja) | 抵抗の形成方法 |