JPS55160422A - Method and device for thin film growth - Google Patents

Method and device for thin film growth

Info

Publication number
JPS55160422A
JPS55160422A JP6842779A JP6842779A JPS55160422A JP S55160422 A JPS55160422 A JP S55160422A JP 6842779 A JP6842779 A JP 6842779A JP 6842779 A JP6842779 A JP 6842779A JP S55160422 A JPS55160422 A JP S55160422A
Authority
JP
Japan
Prior art keywords
thin film
heater
around
pots
melting pot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6842779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6232610B2 (enrdf_load_html_response
Inventor
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6842779A priority Critical patent/JPS55160422A/ja
Publication of JPS55160422A publication Critical patent/JPS55160422A/ja
Publication of JPS6232610B2 publication Critical patent/JPS6232610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP6842779A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842779A JPS55160422A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842779A JPS55160422A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Publications (2)

Publication Number Publication Date
JPS55160422A true JPS55160422A (en) 1980-12-13
JPS6232610B2 JPS6232610B2 (enrdf_load_html_response) 1987-07-15

Family

ID=13373374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842779A Granted JPS55160422A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Country Status (1)

Country Link
JP (1) JPS55160422A (enrdf_load_html_response)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002249868A (ja) * 2001-02-21 2002-09-06 Denso Corp 蒸着装置
JP2007002291A (ja) * 2005-06-23 2007-01-11 Utec:Kk 蒸発源、蒸着装置及び蒸着方法
JP2008516389A (ja) * 2004-10-11 2008-05-15 ドゥサン ディーエヌディー カンパニー リミテッド 有機発光ダイオード蒸着工程用のマルチノズルるつぼ装置
JP2012126958A (ja) * 2010-12-15 2012-07-05 Ulvac Japan Ltd 蒸着装置及び蒸着方法
JP2013185208A (ja) * 2012-03-08 2013-09-19 Hitachi Zosen Corp 蒸着材料ガス混合装置
JP2016017204A (ja) * 2014-07-08 2016-02-01 長州産業株式会社 リング型蒸着源

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002249868A (ja) * 2001-02-21 2002-09-06 Denso Corp 蒸着装置
JP2008516389A (ja) * 2004-10-11 2008-05-15 ドゥサン ディーエヌディー カンパニー リミテッド 有機発光ダイオード蒸着工程用のマルチノズルるつぼ装置
JP2007002291A (ja) * 2005-06-23 2007-01-11 Utec:Kk 蒸発源、蒸着装置及び蒸着方法
JP2012126958A (ja) * 2010-12-15 2012-07-05 Ulvac Japan Ltd 蒸着装置及び蒸着方法
JP2013185208A (ja) * 2012-03-08 2013-09-19 Hitachi Zosen Corp 蒸着材料ガス混合装置
JP2016017204A (ja) * 2014-07-08 2016-02-01 長州産業株式会社 リング型蒸着源

Also Published As

Publication number Publication date
JPS6232610B2 (enrdf_load_html_response) 1987-07-15

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