JPS6232610B2 - - Google Patents
Info
- Publication number
- JPS6232610B2 JPS6232610B2 JP54068427A JP6842779A JPS6232610B2 JP S6232610 B2 JPS6232610 B2 JP S6232610B2 JP 54068427 A JP54068427 A JP 54068427A JP 6842779 A JP6842779 A JP 6842779A JP S6232610 B2 JPS6232610 B2 JP S6232610B2
- Authority
- JP
- Japan
- Prior art keywords
- mixer
- thin film
- types
- substrate
- molecular beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6842779A JPS55160422A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6842779A JPS55160422A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55160422A JPS55160422A (en) | 1980-12-13 |
JPS6232610B2 true JPS6232610B2 (enrdf_load_html_response) | 1987-07-15 |
Family
ID=13373374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6842779A Granted JPS55160422A (en) | 1979-05-31 | 1979-05-31 | Method and device for thin film growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55160422A (enrdf_load_html_response) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4599727B2 (ja) * | 2001-02-21 | 2010-12-15 | 株式会社デンソー | 蒸着装置 |
KR100651258B1 (ko) * | 2004-10-11 | 2006-11-29 | 두산디앤디 주식회사 | 유기 박막 증착 공정용 멀티 노즐 도가니 장치 |
JP4841872B2 (ja) * | 2005-06-23 | 2011-12-21 | 株式会社ユーテック | 蒸発源及び蒸着装置 |
JP5685433B2 (ja) * | 2010-12-15 | 2015-03-18 | 株式会社アルバック | 蒸着装置及び蒸着方法 |
JP5943654B2 (ja) * | 2012-03-08 | 2016-07-05 | 日立造船株式会社 | 蒸着材料ガス混合装置 |
JP6348790B2 (ja) * | 2014-07-08 | 2018-06-27 | 長州産業株式会社 | リング型蒸着源 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53110973A (en) * | 1977-03-10 | 1978-09-28 | Futaba Denshi Kogyo Kk | Method and apparatus for manufacturing compounds |
-
1979
- 1979-05-31 JP JP6842779A patent/JPS55160422A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55160422A (en) | 1980-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1560982A (en) | Apparatus and method for chemical vapour deposition | |
JP2505777B2 (ja) | 半導体物質のエピタキシャル層堆積法 | |
JPS6232610B2 (enrdf_load_html_response) | ||
JPH01305894A (ja) | 薄膜結晶成長装置および成長方法 | |
US4133702A (en) | Method of producing structured layers on a substrate being irradiated with two coherent particle beams | |
JP2001250783A (ja) | 気相成長装置及び気相成長方法 | |
JPS5936927A (ja) | 半導体気相成長装置 | |
JP3923228B2 (ja) | 基板保持機構およびそれを用いた化合物半導体の製造方法 | |
EP1504136A2 (en) | Large area deposition in high vacuum with high thickness uniformity | |
GB2036590A (en) | Process and apparatus for the production of ga a1 as:si epitaxial coatings | |
JPH0480366A (ja) | 有機金属気相成長装置 | |
JPH0831741A (ja) | Kセル型蒸着源 | |
JPH0226893A (ja) | 気相成長装置 | |
JP2791444B2 (ja) | 気相エピタキシャル成長方法 | |
JPH05136064A (ja) | 気相成長装置 | |
JPS63937B2 (enrdf_load_html_response) | ||
JPH069191B2 (ja) | 気相成長法による半導体製造装置 | |
JPH04221820A (ja) | 有機金属気相成長方法 | |
JPH02208287A (ja) | 結晶成長法およびその装置 | |
JPS58215021A (ja) | 分子線源 | |
JPH0760795B2 (ja) | 気相薄膜形成装置 | |
JPH10242062A (ja) | 半導体薄膜の成長方法 | |
JPH0139205B2 (enrdf_load_html_response) | ||
JPS6014430A (ja) | 選択エピタキシヤル結晶成長法 | |
JPH07297132A (ja) | 気相成長装置 |