JPS55141750A - Insulated gate type semiconductor device - Google Patents

Insulated gate type semiconductor device

Info

Publication number
JPS55141750A
JPS55141750A JP4992379A JP4992379A JPS55141750A JP S55141750 A JPS55141750 A JP S55141750A JP 4992379 A JP4992379 A JP 4992379A JP 4992379 A JP4992379 A JP 4992379A JP S55141750 A JPS55141750 A JP S55141750A
Authority
JP
Japan
Prior art keywords
charge
semiconductor device
type semiconductor
charge storage
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4992379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6336142B2 (enrdf_load_stackoverflow
Inventor
Tsuyoshi Tanahashi
Shigeru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4992379A priority Critical patent/JPS55141750A/ja
Publication of JPS55141750A publication Critical patent/JPS55141750A/ja
Publication of JPS6336142B2 publication Critical patent/JPS6336142B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP4992379A 1979-04-23 1979-04-23 Insulated gate type semiconductor device Granted JPS55141750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4992379A JPS55141750A (en) 1979-04-23 1979-04-23 Insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4992379A JPS55141750A (en) 1979-04-23 1979-04-23 Insulated gate type semiconductor device

Publications (2)

Publication Number Publication Date
JPS55141750A true JPS55141750A (en) 1980-11-05
JPS6336142B2 JPS6336142B2 (enrdf_load_stackoverflow) 1988-07-19

Family

ID=12844527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4992379A Granted JPS55141750A (en) 1979-04-23 1979-04-23 Insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS55141750A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142675A (en) * 1980-01-07 1981-11-07 Texas Instruments Inc Semiconductor memory and method of forming same
JPS57115863A (en) * 1980-11-24 1982-07-19 Siemens Ag Dynamic semiconductor memory cell and method of producing same
JPS57145364A (en) * 1981-03-04 1982-09-08 Nec Corp Semiconductor memory ic device
JPS57188866A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Manufacture of semiconductor device
JPS62105466A (ja) * 1985-10-31 1987-05-15 インターナショナル　ビジネス　マシーンズ　コーポレーション ダイナミツク・ランダム・アクセス・メモリ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142675A (en) * 1980-01-07 1981-11-07 Texas Instruments Inc Semiconductor memory and method of forming same
JPS57115863A (en) * 1980-11-24 1982-07-19 Siemens Ag Dynamic semiconductor memory cell and method of producing same
JPS57145364A (en) * 1981-03-04 1982-09-08 Nec Corp Semiconductor memory ic device
JPS57188866A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Manufacture of semiconductor device
JPS62105466A (ja) * 1985-10-31 1987-05-15 インターナショナル　ビジネス　マシーンズ　コーポレーション ダイナミツク・ランダム・アクセス・メモリ

Also Published As

Publication number Publication date
JPS6336142B2 (enrdf_load_stackoverflow) 1988-07-19

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