JPS55140270A - Insulated gate transistor - Google Patents

Insulated gate transistor

Info

Publication number
JPS55140270A
JPS55140270A JP4724479A JP4724479A JPS55140270A JP S55140270 A JPS55140270 A JP S55140270A JP 4724479 A JP4724479 A JP 4724479A JP 4724479 A JP4724479 A JP 4724479A JP S55140270 A JPS55140270 A JP S55140270A
Authority
JP
Japan
Prior art keywords
layer
film
region
coated
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4724479A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213829B2 (enrdf_load_stackoverflow
Inventor
Kunimitsu Fujiki
Toshihiro Sekikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4724479A priority Critical patent/JPS55140270A/ja
Publication of JPS55140270A publication Critical patent/JPS55140270A/ja
Publication of JPH0213829B2 publication Critical patent/JPH0213829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP4724479A 1979-04-19 1979-04-19 Insulated gate transistor Granted JPS55140270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4724479A JPS55140270A (en) 1979-04-19 1979-04-19 Insulated gate transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4724479A JPS55140270A (en) 1979-04-19 1979-04-19 Insulated gate transistor

Publications (2)

Publication Number Publication Date
JPS55140270A true JPS55140270A (en) 1980-11-01
JPH0213829B2 JPH0213829B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=12769809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4724479A Granted JPS55140270A (en) 1979-04-19 1979-04-19 Insulated gate transistor

Country Status (1)

Country Link
JP (1) JPS55140270A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS61185972A (ja) * 1985-02-13 1986-08-19 Nec Corp Ｍｉｓトランジスタの動作方法及びｍｉｓトランジスタの構造及びその製造方法
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
WO2001050513A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Thin film transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034176A (enrdf_load_stackoverflow) * 1973-07-30 1975-04-02
JPS51114077A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Semiconductor device
JPS51135373A (en) * 1975-05-20 1976-11-24 Agency Of Ind Science & Technol Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034176A (enrdf_load_stackoverflow) * 1973-07-30 1975-04-02
JPS51114077A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Semiconductor device
JPS51135373A (en) * 1975-05-20 1976-11-24 Agency Of Ind Science & Technol Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS61185972A (ja) * 1985-02-13 1986-08-19 Nec Corp Ｍｉｓトランジスタの動作方法及びｍｉｓトランジスタの構造及びその製造方法
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
WO2001050513A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Thin film transistor
US6528830B1 (en) 2000-01-07 2003-03-04 Seiko Epson Corporation Thin film transistor

Also Published As

Publication number Publication date
JPH0213829B2 (enrdf_load_stackoverflow) 1990-04-05

Similar Documents

Publication Publication Date Title
JPS55133574A (en) Insulated gate field effect transistor
EP0148595A3 (en) Method of fabricating mesa mosfet using overhang mask and resulting structure
JPS5595370A (en) Compound semiconductor field-effect transistor
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS55140270A (en) Insulated gate transistor
JPS55117281A (en) 3[5 group compound semiconductor hetero structure mosfet
JPS54156483A (en) Non-volatile semiconductor memory device
JPS56126977A (en) Junction type field effect transistor
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS572519A (en) Manufacture of semiconductor device
JPS5731177A (en) Insulated gate type field effect transistor
JPS57192083A (en) Semiconductor device
JPS57157563A (en) Semiconductor device
JPS57121271A (en) Field effect transistor
JPS54141596A (en) Semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS564279A (en) Insulated gate type field effect transistor
JPS5649575A (en) Junction type field effect semiconductor
JPS551141A (en) Insulated gate field-effect type transistor
JPS56104472A (en) Semiconductor device
JPS558078A (en) Floating gate type mos field effect transistor
JPS57170570A (en) Field effect transistor
JPS5756971A (en) High speed operation type semiconductor device
JPS575346A (en) Semiconductor device and manufacture thereof
JPS54144182A (en) Semiconductor device