JPS5513924A - Semiconductor photoelectronic conversion device - Google Patents

Semiconductor photoelectronic conversion device

Info

Publication number
JPS5513924A
JPS5513924A JP8657278A JP8657278A JPS5513924A JP S5513924 A JPS5513924 A JP S5513924A JP 8657278 A JP8657278 A JP 8657278A JP 8657278 A JP8657278 A JP 8657278A JP S5513924 A JPS5513924 A JP S5513924A
Authority
JP
Japan
Prior art keywords
layer
substrate
incident light
gate region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8657278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250992B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP8657278A priority Critical patent/JPS5513924A/ja
Priority to US06/039,445 priority patent/US4427990A/en
Publication of JPS5513924A publication Critical patent/JPS5513924A/ja
Publication of JPS6250992B2 publication Critical patent/JPS6250992B2/ja
Priority to US07/332,441 priority patent/US5019876A/en
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
JP8657278A 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device Granted JPS5513924A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8657278A JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8657278A JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device

Publications (2)

Publication Number Publication Date
JPS5513924A true JPS5513924A (en) 1980-01-31
JPS6250992B2 JPS6250992B2 (enrdf_load_stackoverflow) 1987-10-28

Family

ID=13890720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8657278A Granted JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device

Country Status (1)

Country Link
JP (1) JPS5513924A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893386A (ja) * 1981-11-30 1983-06-03 Semiconductor Res Found 半導体光電変換装置
JPS5895877A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 半導体光電変換装置
DE3344637A1 (de) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Photoelektrischer halbleiterwandler
JPS59207640A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 半導体装置
JP2011040445A (ja) * 2009-08-07 2011-02-24 Hitachi Ltd 半導体受光装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4988492A (enrdf_load_stackoverflow) * 1972-09-22 1974-08-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4988492A (enrdf_load_stackoverflow) * 1972-09-22 1974-08-23

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893386A (ja) * 1981-11-30 1983-06-03 Semiconductor Res Found 半導体光電変換装置
JPS5895877A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 半導体光電変換装置
DE3344637A1 (de) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Photoelektrischer halbleiterwandler
JPS59207640A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 半導体装置
JP2011040445A (ja) * 2009-08-07 2011-02-24 Hitachi Ltd 半導体受光装置及びその製造方法

Also Published As

Publication number Publication date
JPS6250992B2 (enrdf_load_stackoverflow) 1987-10-28

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