JPS6250992B2 - - Google Patents

Info

Publication number
JPS6250992B2
JPS6250992B2 JP53086572A JP8657278A JPS6250992B2 JP S6250992 B2 JPS6250992 B2 JP S6250992B2 JP 53086572 A JP53086572 A JP 53086572A JP 8657278 A JP8657278 A JP 8657278A JP S6250992 B2 JPS6250992 B2 JP S6250992B2
Authority
JP
Japan
Prior art keywords
gate
region
channel region
drain
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53086572A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5513924A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8657278A priority Critical patent/JPS5513924A/ja
Priority to US06/039,445 priority patent/US4427990A/en
Publication of JPS5513924A publication Critical patent/JPS5513924A/ja
Publication of JPS6250992B2 publication Critical patent/JPS6250992B2/ja
Priority to US07/332,441 priority patent/US5019876A/en
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
JP8657278A 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device Granted JPS5513924A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8657278A JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8657278A JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device

Publications (2)

Publication Number Publication Date
JPS5513924A JPS5513924A (en) 1980-01-31
JPS6250992B2 true JPS6250992B2 (enrdf_load_stackoverflow) 1987-10-28

Family

ID=13890720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8657278A Granted JPS5513924A (en) 1978-07-14 1978-07-14 Semiconductor photoelectronic conversion device

Country Status (1)

Country Link
JP (1) JPS5513924A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077844B2 (ja) * 1981-11-30 1995-01-30 財団法人半導体研究振興会 静電誘導型半導体光電変換装置
JPS5895877A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 半導体光電変換装置
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59207640A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 半導体装置
JP5401203B2 (ja) * 2009-08-07 2014-01-29 株式会社日立製作所 半導体受光装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices

Also Published As

Publication number Publication date
JPS5513924A (en) 1980-01-31

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