JPS55120137A - Masking material for manufacturing semiconductor device and manufacture of mask - Google Patents

Masking material for manufacturing semiconductor device and manufacture of mask

Info

Publication number
JPS55120137A
JPS55120137A JP2779679A JP2779679A JPS55120137A JP S55120137 A JPS55120137 A JP S55120137A JP 2779679 A JP2779679 A JP 2779679A JP 2779679 A JP2779679 A JP 2779679A JP S55120137 A JPS55120137 A JP S55120137A
Authority
JP
Japan
Prior art keywords
mask
resist
electron beam
moved
charged electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2779679A
Other languages
Japanese (ja)
Other versions
JPS6315740B2 (en
Inventor
Yasuo Iida
Katsumi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2779679A priority Critical patent/JPS55120137A/en
Publication of JPS55120137A publication Critical patent/JPS55120137A/en
Publication of JPS6315740B2 publication Critical patent/JPS6315740B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To reduce the accumulation of charged electrons to the degree where the accuracy of lithography is not affected in the case the resist film in a mask is sensed by an electron beam by determining the resistance value of a sheet of a metal film corresponding to the sensitivity of the resist. CONSTITUTION:In the case an electron beam 101 is moved to a position 2 from the position of direct radiation 70 by giving a specified deflection, the electron beam moved to a position 3 by excessive deflection. This is caused by the fact that the charged electrons saused by the shot of the electron beam repell one another, the position of the shot is slightly moved to the right, the charged electrons are accumulated, and the beam is deflected to the unexpected position 3. Then, the following method is performed: In the process wherein a metal layer 603 is stacked on a poly-Si 602 on a glass plate 601, a resist 604 is applied, etching is performed, and a copying mask is formed; the resistance (OMEGA/ ) of the metal film is made to be 10<-6>-10<-4>, 2X10<5>-2X10<3>, and 3X10<4>-200 as against the sensitivity of the resist (coulomb/cm<2>) of 10<-7>-10<-6>, 10<-6>-10<-5>, 10<-5>-10<-4>, respectively. Then, the charging effect is suppressed and a precise copying mask is obtained.
JP2779679A 1979-03-09 1979-03-09 Masking material for manufacturing semiconductor device and manufacture of mask Granted JPS55120137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2779679A JPS55120137A (en) 1979-03-09 1979-03-09 Masking material for manufacturing semiconductor device and manufacture of mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2779679A JPS55120137A (en) 1979-03-09 1979-03-09 Masking material for manufacturing semiconductor device and manufacture of mask

Publications (2)

Publication Number Publication Date
JPS55120137A true JPS55120137A (en) 1980-09-16
JPS6315740B2 JPS6315740B2 (en) 1988-04-06

Family

ID=12230929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2779679A Granted JPS55120137A (en) 1979-03-09 1979-03-09 Masking material for manufacturing semiconductor device and manufacture of mask

Country Status (1)

Country Link
JP (1) JPS55120137A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5446479A (en) * 1977-09-20 1979-04-12 Mitsubishi Electric Corp Negative plate for photo mask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5446479A (en) * 1977-09-20 1979-04-12 Mitsubishi Electric Corp Negative plate for photo mask

Also Published As

Publication number Publication date
JPS6315740B2 (en) 1988-04-06

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