JPS55115364A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55115364A JPS55115364A JP2270879A JP2270879A JPS55115364A JP S55115364 A JPS55115364 A JP S55115364A JP 2270879 A JP2270879 A JP 2270879A JP 2270879 A JP2270879 A JP 2270879A JP S55115364 A JPS55115364 A JP S55115364A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- gate
- current
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2270879A JPS55115364A (en) | 1979-02-28 | 1979-02-28 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2270879A JPS55115364A (en) | 1979-02-28 | 1979-02-28 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55115364A true JPS55115364A (en) | 1980-09-05 |
JPH0126191B2 JPH0126191B2 (enrdf_load_stackoverflow) | 1989-05-22 |
Family
ID=12090335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2270879A Granted JPS55115364A (en) | 1979-02-28 | 1979-02-28 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55115364A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166767A (ja) * | 1982-03-11 | 1983-10-01 | ウエスチングハウス エレクトリック コ−ポレ−ション | 過電圧保護付きサイリスタの製造方法 |
JPS5987868A (ja) * | 1982-10-13 | 1984-05-21 | ウエスチングハウス エレクトリック コ−ポレ−ション | 過電圧自己保護構造のサイリスタ |
WO1994023454A1 (en) * | 1993-03-31 | 1994-10-13 | Siemens Components, Inc. | A pedestal lead frame for supporting a semiconductor chip |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49121490A (enrdf_load_stackoverflow) * | 1973-03-05 | 1974-11-20 | ||
JPS5348457A (en) * | 1976-10-15 | 1978-05-01 | Hitachi Ltd | Production of semiconductor element |
-
1979
- 1979-02-28 JP JP2270879A patent/JPS55115364A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49121490A (enrdf_load_stackoverflow) * | 1973-03-05 | 1974-11-20 | ||
JPS5348457A (en) * | 1976-10-15 | 1978-05-01 | Hitachi Ltd | Production of semiconductor element |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166767A (ja) * | 1982-03-11 | 1983-10-01 | ウエスチングハウス エレクトリック コ−ポレ−ション | 過電圧保護付きサイリスタの製造方法 |
JPS5987868A (ja) * | 1982-10-13 | 1984-05-21 | ウエスチングハウス エレクトリック コ−ポレ−ション | 過電圧自己保護構造のサイリスタ |
WO1994023454A1 (en) * | 1993-03-31 | 1994-10-13 | Siemens Components, Inc. | A pedestal lead frame for supporting a semiconductor chip |
US5506425A (en) * | 1993-03-31 | 1996-04-09 | Siemens Components, Inc. | Semiconductor device and lead frame combination |
Also Published As
Publication number | Publication date |
---|---|
JPH0126191B2 (enrdf_load_stackoverflow) | 1989-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69307173D1 (de) | Halbleitervorrichtung mit einer RF-wiedergeschlagenen eigenleitenden Schicht | |
GB1062202A (en) | Improvements in or relating to light emitting transistor systems | |
JPS55162224A (en) | Preparation of semiconductor device | |
JPS55115364A (en) | Manufacturing method of semiconductor device | |
JPS5312288A (en) | Light emitting semiconductor device | |
JPS568890A (en) | Semiconductor laser and manufacture thereof | |
US3427516A (en) | Light emitting junction device using silicon as a dopant | |
JPS56126914A (en) | Manufacture of semiconductor device | |
JPS5615035A (en) | Manufacture of semiconductor device | |
JPS5681973A (en) | Manufacture of mos type semiconductor device | |
JPS57104279A (en) | Photo isolator | |
JPS5477088A (en) | Semiconductor photo detector | |
JPS57159071A (en) | Compound semiconductor device | |
JPS5646522A (en) | Semiconductor device and manufacture thereof | |
JPS5758354A (en) | Semiconductor device | |
JPS56135972A (en) | Manufacture of semiconductor device | |
JPS56130916A (en) | Manufacture of semiconductor device | |
JPS54152874A (en) | Semiconductor device and its manufacture | |
JPS54114081A (en) | Semiconductor integrated circuit device | |
JPS56142631A (en) | Manufacture of semiconductor device | |
JPS5743416A (en) | Manufacture of semiconductor device | |
JPS5678154A (en) | Manufacture of semiconductor device | |
JPS56130917A (en) | Manufacture of semiconductor device | |
JPS5615061A (en) | Semiconductor memory device | |
JPS5642347A (en) | Passivation of surface of compound semiconductor |