JPH0126191B2 - - Google Patents

Info

Publication number
JPH0126191B2
JPH0126191B2 JP54022708A JP2270879A JPH0126191B2 JP H0126191 B2 JPH0126191 B2 JP H0126191B2 JP 54022708 A JP54022708 A JP 54022708A JP 2270879 A JP2270879 A JP 2270879A JP H0126191 B2 JPH0126191 B2 JP H0126191B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
junction
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54022708A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55115364A (en
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2270879A priority Critical patent/JPS55115364A/ja
Publication of JPS55115364A publication Critical patent/JPS55115364A/ja
Publication of JPH0126191B2 publication Critical patent/JPH0126191B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
JP2270879A 1979-02-28 1979-02-28 Manufacturing method of semiconductor device Granted JPS55115364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2270879A JPS55115364A (en) 1979-02-28 1979-02-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2270879A JPS55115364A (en) 1979-02-28 1979-02-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55115364A JPS55115364A (en) 1980-09-05
JPH0126191B2 true JPH0126191B2 (enrdf_load_stackoverflow) 1989-05-22

Family

ID=12090335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2270879A Granted JPS55115364A (en) 1979-02-28 1979-02-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55115364A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection
US4555845A (en) * 1982-10-13 1985-12-03 Westinghouse Electric Corp. Temperature stable self-protected thyristor and method of producing
US5344794A (en) * 1993-03-31 1994-09-06 Siemens Components, Inc. Method of making a semiconductor chip

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
JPS5348457A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Production of semiconductor element

Also Published As

Publication number Publication date
JPS55115364A (en) 1980-09-05

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