JPS6245709B2 - - Google Patents

Info

Publication number
JPS6245709B2
JPS6245709B2 JP54129198A JP12919879A JPS6245709B2 JP S6245709 B2 JPS6245709 B2 JP S6245709B2 JP 54129198 A JP54129198 A JP 54129198A JP 12919879 A JP12919879 A JP 12919879A JP S6245709 B2 JPS6245709 B2 JP S6245709B2
Authority
JP
Japan
Prior art keywords
region
layer
impurity concentration
gate
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54129198A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5651868A (en
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP12919879A priority Critical patent/JPS5651868A/ja
Publication of JPS5651868A publication Critical patent/JPS5651868A/ja
Publication of JPS6245709B2 publication Critical patent/JPS6245709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP12919879A 1979-10-05 1979-10-05 Semiconductor device Granted JPS5651868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12919879A JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12919879A JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5651868A JPS5651868A (en) 1981-05-09
JPS6245709B2 true JPS6245709B2 (enrdf_load_stackoverflow) 1987-09-28

Family

ID=15003558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12919879A Granted JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5651868A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195867A (ja) * 1983-04-20 1984-11-07 Nec Corp サイリスタ
JPS59214261A (ja) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPS61287269A (ja) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan 半導体素子

Also Published As

Publication number Publication date
JPS5651868A (en) 1981-05-09

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