JPS5651868A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5651868A
JPS5651868A JP12919879A JP12919879A JPS5651868A JP S5651868 A JPS5651868 A JP S5651868A JP 12919879 A JP12919879 A JP 12919879A JP 12919879 A JP12919879 A JP 12919879A JP S5651868 A JPS5651868 A JP S5651868A
Authority
JP
Japan
Prior art keywords
layer
region
type
thyristor
type impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12919879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6245709B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12919879A priority Critical patent/JPS5651868A/ja
Publication of JPS5651868A publication Critical patent/JPS5651868A/ja
Publication of JPS6245709B2 publication Critical patent/JPS6245709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP12919879A 1979-10-05 1979-10-05 Semiconductor device Granted JPS5651868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12919879A JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12919879A JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5651868A true JPS5651868A (en) 1981-05-09
JPS6245709B2 JPS6245709B2 (enrdf_load_stackoverflow) 1987-09-28

Family

ID=15003558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12919879A Granted JPS5651868A (en) 1979-10-05 1979-10-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5651868A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195867A (ja) * 1983-04-20 1984-11-07 Nec Corp サイリスタ
JPS59214261A (ja) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPS61287269A (ja) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan 半導体素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195867A (ja) * 1983-04-20 1984-11-07 Nec Corp サイリスタ
JPS59214261A (ja) * 1983-05-20 1984-12-04 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPS61287269A (ja) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan 半導体素子

Also Published As

Publication number Publication date
JPS6245709B2 (enrdf_load_stackoverflow) 1987-09-28

Similar Documents

Publication Publication Date Title
JPS5598858A (en) Gate turn-off thyristor
JPS5778172A (en) Gate turn-off thyristor
JPS5651868A (en) Semiconductor device
JPS5739574A (en) Semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS5617068A (en) Turn-off thyristor
JPS54113273A (en) Field effect-type switching element
JPS57138175A (en) Controlled rectifier for semiconductor
JPS5548958A (en) Semiconductor device
JPS5681982A (en) Power phototransistor
JPS5487488A (en) Field effect semiconductor device
JPS55146967A (en) Semiconductor ic device
JPS54127687A (en) Planar-type reverse conducting thyristor
JPS57181162A (en) Gate turn off thyristor
JPS5541751A (en) Manufacturing semiconductor device
JPS55165673A (en) Semiconductor device
JPS55153385A (en) Current squeezing type semiconductor device
JPS55127066A (en) Manufacture of reverse-conductive thyristor
JPS55120166A (en) Semiconductor device
JPS5678165A (en) Manufacture of semiconductor element
JPS55132053A (en) Manufacture of semiconductor device
JPS56162866A (en) Composite thyristor
JPS5654062A (en) Production of semiconductor device
JPS5478676A (en) Manufacture of semiconductor device
JPS566469A (en) Manufacture of semiconductor device