JPS5494886A - High dielectric strength field effect semiconductor device - Google Patents

High dielectric strength field effect semiconductor device

Info

Publication number
JPS5494886A
JPS5494886A JP210478A JP210478A JPS5494886A JP S5494886 A JPS5494886 A JP S5494886A JP 210478 A JP210478 A JP 210478A JP 210478 A JP210478 A JP 210478A JP S5494886 A JPS5494886 A JP S5494886A
Authority
JP
Japan
Prior art keywords
layer
dielectric strength
dose
spacing
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP210478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62589B2 (cs
Inventor
Toshiaki Yamano
Katsumasa Fujii
Tetsuo Biwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP210478A priority Critical patent/JPS5494886A/ja
Publication of JPS5494886A publication Critical patent/JPS5494886A/ja
Publication of JPS62589B2 publication Critical patent/JPS62589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP210478A 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device Granted JPS5494886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP210478A JPS5494886A (en) 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP210478A JPS5494886A (en) 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5494886A true JPS5494886A (en) 1979-07-26
JPS62589B2 JPS62589B2 (cs) 1987-01-08

Family

ID=11520028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP210478A Granted JPS5494886A (en) 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5494886A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110268A (en) * 1980-01-23 1981-09-01 Ibm Method of forming dmoz element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110268A (en) * 1980-01-23 1981-09-01 Ibm Method of forming dmoz element

Also Published As

Publication number Publication date
JPS62589B2 (cs) 1987-01-08

Similar Documents

Publication Publication Date Title
JPS56155572A (en) Insulated gate field effect type semiconductor device
JPS5635459A (en) Semiconductor memory device and manufacture thereof
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5494886A (en) High dielectric strength field effect semiconductor device
JPS54109785A (en) Semiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5583263A (en) Mos semiconductor device
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS54114081A (en) Semiconductor integrated circuit device
JPS5783059A (en) Manufacture of mos type semiconductor device
KR950021134A (ko) 반도체소자의 콘택 형성방법
JPS54161889A (en) Insulated gate type field effect transistor
JPS5538019A (en) Manufacturing of semiconductor device
JPS56126957A (en) Manufacture of semiconductor device
JPS5642372A (en) Manufacture of semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS5759321A (en) Manufacture of semiconductor device
JPS54161281A (en) Field effect semiconductor device with high dielectric strength
JPS5563876A (en) Field-effect semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5642373A (en) Manufacture of semiconductor device
JPS54104782A (en) Mos type semiconductor device
JPS57106150A (en) Manufacture of semiconductor device
JPS5490978A (en) Manufacture for mos type semiconductor device
JPS54129984A (en) Manufacture of semiconductor device