JPS62589B2 - - Google Patents

Info

Publication number
JPS62589B2
JPS62589B2 JP53002104A JP210478A JPS62589B2 JP S62589 B2 JPS62589 B2 JP S62589B2 JP 53002104 A JP53002104 A JP 53002104A JP 210478 A JP210478 A JP 210478A JP S62589 B2 JPS62589 B2 JP S62589B2
Authority
JP
Japan
Prior art keywords
region
layer
voltage
drain
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53002104A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5494886A (en
Inventor
Toshiaki Yamano
Katsumasa Fujii
Tetsuo Biwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP210478A priority Critical patent/JPS5494886A/ja
Publication of JPS5494886A publication Critical patent/JPS5494886A/ja
Publication of JPS62589B2 publication Critical patent/JPS62589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP210478A 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device Granted JPS5494886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP210478A JPS5494886A (en) 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP210478A JPS5494886A (en) 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5494886A JPS5494886A (en) 1979-07-26
JPS62589B2 true JPS62589B2 (cs) 1987-01-08

Family

ID=11520028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP210478A Granted JPS5494886A (en) 1978-01-11 1978-01-11 High dielectric strength field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5494886A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion

Also Published As

Publication number Publication date
JPS5494886A (en) 1979-07-26

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