JPS5474432A - Method of developing photosensitive quinone diazide composition - Google Patents

Method of developing photosensitive quinone diazide composition

Info

Publication number
JPS5474432A
JPS5474432A JP13147078A JP13147078A JPS5474432A JP S5474432 A JPS5474432 A JP S5474432A JP 13147078 A JP13147078 A JP 13147078A JP 13147078 A JP13147078 A JP 13147078A JP S5474432 A JPS5474432 A JP S5474432A
Authority
JP
Japan
Prior art keywords
quinone diazide
developing photosensitive
photosensitive quinone
composition
diazide composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13147078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161097B2 (OSRAM
Inventor
Aaru Girudo Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JPS5474432A publication Critical patent/JPS5474432A/ja
Publication of JPS6161097B2 publication Critical patent/JPS6161097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP13147078A 1977-10-25 1978-10-25 Method of developing photosensitive quinone diazide composition Granted JPS5474432A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/844,951 US4141733A (en) 1977-10-25 1977-10-25 Development of light-sensitive quinone diazide compositions

Publications (2)

Publication Number Publication Date
JPS5474432A true JPS5474432A (en) 1979-06-14
JPS6161097B2 JPS6161097B2 (OSRAM) 1986-12-24

Family

ID=25294041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13147078A Granted JPS5474432A (en) 1977-10-25 1978-10-25 Method of developing photosensitive quinone diazide composition

Country Status (5)

Country Link
US (1) US4141733A (OSRAM)
JP (1) JPS5474432A (OSRAM)
CA (1) CA1110903A (OSRAM)
FR (1) FR2407497A1 (OSRAM)
GB (1) GB2013913B (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122031A (en) * 1980-03-01 1981-09-25 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
JPS57151939A (en) * 1981-03-16 1982-09-20 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
JPS589143A (ja) * 1981-04-10 1983-01-19 シツプレ−・カンパニ−・インコ−ポレ−テツド 金属イオンを含まないフオ−トレジスト現像液組成物
JPS5843451A (ja) * 1981-09-09 1983-03-14 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS60254043A (ja) * 1984-05-30 1985-12-14 Yotsukaichi Gosei Kk ポジ型感光材料用現像剤
JPH0234858A (ja) * 1988-11-05 1990-02-05 Toshiba Corp フォトレジスト現像液の製造方法
JPH03502010A (ja) * 1988-08-10 1991-05-09 ヘキスト　セラニーズ　コーポレーション 感光性ノボラック樹脂

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
US4419437A (en) * 1981-02-11 1983-12-06 Eastman Kodak Company Image-forming compositions and elements containing ionic polyester dispersing agents
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JPS57192952A (en) * 1981-05-25 1982-11-27 Konishiroku Photo Ind Co Ltd Composition of developing solution
US4351895A (en) * 1981-10-19 1982-09-28 American Hoechst Corporation Deletion fluid for positive printing plates
US4423138A (en) * 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
JPS58187926A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd 放射線ネガ型レジストの現像方法
DE3230171A1 (de) * 1982-08-13 1984-02-16 Hoechst Ag, 6230 Frankfurt Waessrig-alkalische loesung und verfahren zum entwickeln von positiv-arbeitenden reproduktionsschichten
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
US4464461A (en) * 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
US4711836A (en) * 1984-09-10 1987-12-08 Olin Hunt Specialty Products, Inc. Development of positive-working photoresist compositions
JPS62102888A (ja) * 1985-10-28 1987-05-13 Toyo Kagaku Kenkyusho:Kk 浄水器等の殺菌洗浄方法
JPH0638159B2 (ja) * 1986-07-18 1994-05-18 東京応化工業株式会社 ポジ型ホトレジスト用現像液
US4871644A (en) * 1986-10-01 1989-10-03 Ciba-Geigy Corporation Photoresist compositions with a bis-benzotriazole
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
US4997748A (en) * 1988-08-26 1991-03-05 Tokyo Ohka Kogyo Co., Ltd. Developer solution for positive-working resist composition
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
JP2639853B2 (ja) * 1990-05-18 1997-08-13 富士写真フイルム株式会社 新規キノンジアジド化合物及びそれを含有する感光性組成物
DE69203824T2 (de) * 1991-10-29 1996-02-22 Du Pont Entwicklerlösungen für lithographische Druckelemente.
US6472128B2 (en) 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6528235B2 (en) 1991-11-15 2003-03-04 Shipley Company, L.L.C. Antihalation compositions
US6773864B1 (en) 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US6340559B1 (en) * 2001-02-21 2002-01-22 Huntsman Petrochemical Corporation Semiconductor developing agent
JP4080784B2 (ja) * 2002-04-26 2008-04-23 東京応化工業株式会社 レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液
US7716813B2 (en) * 2006-12-05 2010-05-18 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating magnetic write pole for a magnetic head using an E-beam resist mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156226A (en) * 1974-11-11 1976-05-17 Sanei Kagaku Kogyo Kk Hojitaipukankoseijushino genzozai
JPS5264877A (en) * 1975-11-26 1977-05-28 Toshiba Corp Production of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE757433A (fr) * 1969-10-14 1971-04-13 Philadelphia Quartz Co Hydroxydes d'alcanol ammonium quaternaire
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156226A (en) * 1974-11-11 1976-05-17 Sanei Kagaku Kogyo Kk Hojitaipukankoseijushino genzozai
JPS5264877A (en) * 1975-11-26 1977-05-28 Toshiba Corp Production of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122031A (en) * 1980-03-01 1981-09-25 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
JPS57151939A (en) * 1981-03-16 1982-09-20 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
JPS589143A (ja) * 1981-04-10 1983-01-19 シツプレ−・カンパニ−・インコ−ポレ−テツド 金属イオンを含まないフオ−トレジスト現像液組成物
JPS5843451A (ja) * 1981-09-09 1983-03-14 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS60254043A (ja) * 1984-05-30 1985-12-14 Yotsukaichi Gosei Kk ポジ型感光材料用現像剤
JPH03502010A (ja) * 1988-08-10 1991-05-09 ヘキスト　セラニーズ　コーポレーション 感光性ノボラック樹脂
JPH0234858A (ja) * 1988-11-05 1990-02-05 Toshiba Corp フォトレジスト現像液の製造方法

Also Published As

Publication number Publication date
FR2407497A1 (fr) 1979-05-25
GB2013913B (en) 1982-03-03
GB2013913A (en) 1979-08-15
FR2407497B1 (OSRAM) 1983-01-21
JPS6161097B2 (OSRAM) 1986-12-24
CA1110903A (en) 1981-10-20
US4141733A (en) 1979-02-27

Similar Documents

Publication Publication Date Title
GB2013913B (en) Development of quinone diazide photoresist compositions
JPS54121114A (en) Method of correcting developing profile of photoresist
GB1552646A (en) Method of determining exposure
EP0132354A3 (en) Developing composition for light-sensitive quinone b diazide
JPS5237044A (en) Method of fixing tonor image
JPS5430284A (en) Method of making film
JPS53137148A (en) Developing agent and method of forming image
JPS5489640A (en) Developing agent for electrophotography
JPS51150323A (en) Photosensitive element and method of forming image therefor
JPS5489637A (en) Improvement of electrophotographic method
JPS5446045A (en) Developing of electrostatic image
JPS53135142A (en) Method of temporarily installing oblique bridge
JPS5443736A (en) Electrostatic image developing agent composition and developing method
JPS53138676A (en) Method of developing photoresist
JPS53134366A (en) Method of forming resist film
JPS5486328A (en) Composition of developing solution
GB2009954B (en) Photosensitive photographic elements
JPS5463828A (en) Developer for photoresist
JPS5377622A (en) Method of recovering color developer
JPS5474431A (en) Method of forming photographic picture
JPS535575A (en) Method of developing photoresist
JPS5476067A (en) Method of exposing positive photoresist
JPS5468302A (en) Method of developing photosensitive layer
JPS5436811A (en) Method of copying
JPS542808A (en) Method of copying