CA1110903A - Development of light-sensitive quinone diazide compositions using methyltriethanol ammonium hydroxide - Google Patents

Development of light-sensitive quinone diazide compositions using methyltriethanol ammonium hydroxide

Info

Publication number
CA1110903A
CA1110903A CA312,370A CA312370A CA1110903A CA 1110903 A CA1110903 A CA 1110903A CA 312370 A CA312370 A CA 312370A CA 1110903 A CA1110903 A CA 1110903A
Authority
CA
Canada
Prior art keywords
quinone diazide
composition
light
sensitive
diazide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA312,370A
Other languages
English (en)
French (fr)
Inventor
John R. Guild
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kodak Graphics Holding Inc
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of CA1110903A publication Critical patent/CA1110903A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CA312,370A 1977-10-25 1978-09-29 Development of light-sensitive quinone diazide compositions using methyltriethanol ammonium hydroxide Expired CA1110903A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US844,951 1977-10-25
US05/844,951 US4141733A (en) 1977-10-25 1977-10-25 Development of light-sensitive quinone diazide compositions

Publications (1)

Publication Number Publication Date
CA1110903A true CA1110903A (en) 1981-10-20

Family

ID=25294041

Family Applications (1)

Application Number Title Priority Date Filing Date
CA312,370A Expired CA1110903A (en) 1977-10-25 1978-09-29 Development of light-sensitive quinone diazide compositions using methyltriethanol ammonium hydroxide

Country Status (5)

Country Link
US (1) US4141733A (OSRAM)
JP (1) JPS5474432A (OSRAM)
CA (1) CA1110903A (OSRAM)
FR (1) FR2407497A1 (OSRAM)
GB (1) GB2013913B (OSRAM)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
JPS56122031A (en) * 1980-03-01 1981-09-25 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
US4419437A (en) * 1981-02-11 1983-12-06 Eastman Kodak Company Image-forming compositions and elements containing ionic polyester dispersing agents
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
JPS57151939A (en) * 1981-03-16 1982-09-20 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
EP0062733B1 (en) * 1981-04-10 1986-01-02 Shipley Company Inc. Metal ion-free photoresist developer composition
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JPS57192952A (en) * 1981-05-25 1982-11-27 Konishiroku Photo Ind Co Ltd Composition of developing solution
JPS5843451A (ja) * 1981-09-09 1983-03-14 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
US4351895A (en) * 1981-10-19 1982-09-28 American Hoechst Corporation Deletion fluid for positive printing plates
US4423138A (en) * 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
JPS58187926A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd 放射線ネガ型レジストの現像方法
DE3230171A1 (de) * 1982-08-13 1984-02-16 Hoechst Ag, 6230 Frankfurt Waessrig-alkalische loesung und verfahren zum entwickeln von positiv-arbeitenden reproduktionsschichten
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
US4464461A (en) * 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
JPS60254043A (ja) * 1984-05-30 1985-12-14 Yotsukaichi Gosei Kk ポジ型感光材料用現像剤
US4711836A (en) * 1984-09-10 1987-12-08 Olin Hunt Specialty Products, Inc. Development of positive-working photoresist compositions
JPS62102888A (ja) * 1985-10-28 1987-05-13 Toyo Kagaku Kenkyusho:Kk 浄水器等の殺菌洗浄方法
JPH0638159B2 (ja) * 1986-07-18 1994-05-18 東京応化工業株式会社 ポジ型ホトレジスト用現像液
US4871644A (en) * 1986-10-01 1989-10-03 Ciba-Geigy Corporation Photoresist compositions with a bis-benzotriazole
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
WO1990001726A1 (en) * 1988-08-10 1990-02-22 Macdermid, Incorporated Light-sensitive novolac resins
US4997748A (en) * 1988-08-26 1991-03-05 Tokyo Ohka Kogyo Co., Ltd. Developer solution for positive-working resist composition
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
JPH0234858A (ja) * 1988-11-05 1990-02-05 Toshiba Corp フォトレジスト現像液の製造方法
JP2639853B2 (ja) * 1990-05-18 1997-08-13 富士写真フイルム株式会社 新規キノンジアジド化合物及びそれを含有する感光性組成物
DE69203824T2 (de) * 1991-10-29 1996-02-22 Du Pont Entwicklerlösungen für lithographische Druckelemente.
US6472128B2 (en) 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6528235B2 (en) 1991-11-15 2003-03-04 Shipley Company, L.L.C. Antihalation compositions
US6773864B1 (en) 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US6340559B1 (en) * 2001-02-21 2002-01-22 Huntsman Petrochemical Corporation Semiconductor developing agent
JP4080784B2 (ja) * 2002-04-26 2008-04-23 東京応化工業株式会社 レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液
US7716813B2 (en) * 2006-12-05 2010-05-18 Hitachi Global Storage Technologies Netherlands B.V. Method for fabricating magnetic write pole for a magnetic head using an E-beam resist mask

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE757433A (fr) * 1969-10-14 1971-04-13 Philadelphia Quartz Co Hydroxydes d'alcanol ammonium quaternaire
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
JPS5156226A (en) * 1974-11-11 1976-05-17 Sanei Kagaku Kogyo Kk Hojitaipukankoseijushino genzozai
JPS5264877A (en) * 1975-11-26 1977-05-28 Toshiba Corp Production of semiconductor device

Also Published As

Publication number Publication date
FR2407497A1 (fr) 1979-05-25
GB2013913B (en) 1982-03-03
JPS5474432A (en) 1979-06-14
GB2013913A (en) 1979-08-15
FR2407497B1 (OSRAM) 1983-01-21
JPS6161097B2 (OSRAM) 1986-12-24
US4141733A (en) 1979-02-27

Similar Documents

Publication Publication Date Title
US4141733A (en) Development of light-sensitive quinone diazide compositions
US4294911A (en) Development of light-sensitive quinone diazide compositions using sulfite stabilizer
EP0132354B1 (en) Developing composition for light-sensitive quinone b diazide
US3759711A (en) Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
CA1085212A (en) Use of volatile carboxylic acids in improved photoresists containing quinone diazides
DE69019706T2 (de) Positiv-arbeitende Photolackzusammensetzung.
US5342727A (en) Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
KR910004849B1 (ko) 감광성 수지 조성물
EP0801327B1 (en) Positive resist composition
US5234791A (en) Radiation-curable composition and radiation-sensitive recording material prepared therefrom for use with high-energy radiation
HK71490A (en) Process for obtaining negative images from positive photoresists
CN1074141C (zh) 低金属离子含量的对-甲酚低聚物和光敏的组合物
EP0881540B1 (en) Photoresist composition
EP0083078B1 (en) Photosensitive resin composition and method for forming fine patterns with said composition
US4792516A (en) Photosensitive composition
KR20030052960A (ko) 화학증폭형 포지티브 내식막 조성물
CN1173928A (zh) 光敏化合物
JP2935306B2 (ja) 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物
US5462840A (en) Use of poly(35-disubstituted 4-hydroxystyrene/N-substituted maleimide for forming a negative image
TW412564B (en) Methods for producing a water insoluble, aqueous alkali soluble, film forming novolak resin, a positive photoresist composition and semiconductor device
US5807947A (en) Copolymers 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene
US4871644A (en) Photoresist compositions with a bis-benzotriazole
US5702862A (en) Positive photoresist coating solution comprising a mixed solvent of propylene glycol monopropyl ether and 2-heptanone
DE68922459T2 (de) Copolymere aus 4-Hydroxystyren und alkylsubstituiertem 4-Hydroxystyren.
JP3781471B2 (ja) 反射防止組成物及びこれを用いる感光膜の形成方法

Legal Events

Date Code Title Description
MKEX Expiry