JPS5264877A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5264877A JPS5264877A JP14072175A JP14072175A JPS5264877A JP S5264877 A JPS5264877 A JP S5264877A JP 14072175 A JP14072175 A JP 14072175A JP 14072175 A JP14072175 A JP 14072175A JP S5264877 A JPS5264877 A JP S5264877A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- resin
- trialkyl
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To obtain photoetching of sharply cut picture lines by performing development with an aqueous trialkyl (hydroxyl alkyl) ammonium hydroxide solution in exposing, developing and removing a positive type photosensitive resin, and also using this chemical in removing the unexposed resin.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14072175A JPS5264877A (en) | 1975-11-26 | 1975-11-26 | Production of semiconductor device |
GB190479A GB1573208A (en) | 1975-11-26 | 1976-08-24 | Surface treating agent adapted for intermediate products of a semiconductor device |
GB35164/76A GB1573206A (en) | 1975-11-26 | 1976-08-24 | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
NLAANVRAGE7609602,A NL185116C (en) | 1975-11-26 | 1976-08-30 | METHOD FOR TREATING SURFACES OF INTERMEDIATES IN THE MANUFACTURE OF SEMICONDUCTORS |
DE2639004A DE2639004C2 (en) | 1975-11-26 | 1976-08-30 | Aqueous solution for the surface treatment of intermediate products in the manufacture of semiconductor components |
US05/927,139 US4239661A (en) | 1975-11-26 | 1978-07-21 | Surface-treating agent adapted for intermediate products of a semiconductor device |
US06/213,317 US4339340A (en) | 1975-11-26 | 1980-12-05 | Surface-treating agent adapted for intermediate products of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14072175A JPS5264877A (en) | 1975-11-26 | 1975-11-26 | Production of semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11040880A Division JPS5635424A (en) | 1980-08-13 | 1980-08-13 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5264877A true JPS5264877A (en) | 1977-05-28 |
Family
ID=15275151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14072175A Pending JPS5264877A (en) | 1975-11-26 | 1975-11-26 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5264877A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5351971A (en) * | 1976-10-21 | 1978-05-11 | Toshiba Corp | Manufacture for semiconductor |
JPS5474432A (en) * | 1977-10-25 | 1979-06-14 | Eastman Kodak Co | Method of developing photosensitive quinone diazide composition |
JPS589143A (en) * | 1981-04-10 | 1983-01-19 | シツプレ−・カンパニ−・インコ−ポレ−テツド | Photoresist developer composition contain no metal ion |
JPS5996731A (en) * | 1982-11-25 | 1984-06-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS59219743A (en) * | 1983-05-28 | 1984-12-11 | Tokyo Ohka Kogyo Co Ltd | Positive type resist developing solution |
-
1975
- 1975-11-26 JP JP14072175A patent/JPS5264877A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5351971A (en) * | 1976-10-21 | 1978-05-11 | Toshiba Corp | Manufacture for semiconductor |
JPS6057218B2 (en) * | 1976-10-21 | 1985-12-13 | 株式会社東芝 | Manufacturing method of semiconductor device |
JPS5474432A (en) * | 1977-10-25 | 1979-06-14 | Eastman Kodak Co | Method of developing photosensitive quinone diazide composition |
JPS6161097B2 (en) * | 1977-10-25 | 1986-12-24 | Eastman Kodak Co | |
JPS589143A (en) * | 1981-04-10 | 1983-01-19 | シツプレ−・カンパニ−・インコ−ポレ−テツド | Photoresist developer composition contain no metal ion |
JPH0326380B2 (en) * | 1981-04-10 | 1991-04-10 | Shipley Co | |
JPS5996731A (en) * | 1982-11-25 | 1984-06-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS59219743A (en) * | 1983-05-28 | 1984-12-11 | Tokyo Ohka Kogyo Co Ltd | Positive type resist developing solution |
JPH0326827B2 (en) * | 1983-05-28 | 1991-04-12 | Tokyo Ohka Kogyo Co Ltd |
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