JPS5635424A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5635424A
JPS5635424A JP11040880A JP11040880A JPS5635424A JP S5635424 A JPS5635424 A JP S5635424A JP 11040880 A JP11040880 A JP 11040880A JP 11040880 A JP11040880 A JP 11040880A JP S5635424 A JPS5635424 A JP S5635424A
Authority
JP
Japan
Prior art keywords
sio2 film
trialkyl
hydroxyalkyl
aqueous solution
ammonium hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11040880A
Other languages
Japanese (ja)
Inventor
Hisashi Muraoka
Masafumi Asano
Taizo Ohashi
Yuzo Shimazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11040880A priority Critical patent/JPS5635424A/en
Publication of JPS5635424A publication Critical patent/JPS5635424A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To eliminate contamination and the adsorption of residues to others in photoetching, by using an aqueous solution of trialkyl (hydroxyalkyl) ammonium hydroxide to remove the unexposed portion of positive photosensitive resin. CONSTITUTION:An SiO2 film is coated on an Si substrate. Positive photosensitive resin made as slurry by dissolving it in an organic solvent is provided on the SiO2 film. Heat treatment is then effected at 80 deg.C for about 20min to ensure the adhesion of the resin to the SiO2 film, evaporate the solvent and prevent fog. A photomask is positioned. Exposure is performed by a light source laid in parallel with the surface of the mask. The unexposed portion is removed by an aqueous solution of trialkyl (hydroxyalkyl) ammonium hydroxide. As a result, electric properties are not deteriorated because impurities such as Na, Cu and Ag which need to be badly avoided in the manufacture of a semiconductor are little. Besides, a sharp image line is made available.
JP11040880A 1980-08-13 1980-08-13 Manufacture of semiconductor device Pending JPS5635424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11040880A JPS5635424A (en) 1980-08-13 1980-08-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11040880A JPS5635424A (en) 1980-08-13 1980-08-13 Manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14072175A Division JPS5264877A (en) 1975-11-26 1975-11-26 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635424A true JPS5635424A (en) 1981-04-08

Family

ID=14535019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11040880A Pending JPS5635424A (en) 1980-08-13 1980-08-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635424A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249355A (en) * 1985-08-10 1987-03-04 Nagase Sangyo Kk Stripping agent composition
EP0212556A2 (en) * 1985-08-24 1987-03-04 Hoechst Aktiengesellschaft Stripping process for lightly hardened photoresist layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351971A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351971A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249355A (en) * 1985-08-10 1987-03-04 Nagase Sangyo Kk Stripping agent composition
EP0212556A2 (en) * 1985-08-24 1987-03-04 Hoechst Aktiengesellschaft Stripping process for lightly hardened photoresist layers
JPS6250832A (en) * 1985-08-24 1987-03-05 ヘキスト・アクチエンゲゼルシヤフト Stripping of photosetting photoresist layer

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