JPS5624936A - Etching of semiconductor device - Google Patents
Etching of semiconductor deviceInfo
- Publication number
- JPS5624936A JPS5624936A JP10157979A JP10157979A JPS5624936A JP S5624936 A JPS5624936 A JP S5624936A JP 10157979 A JP10157979 A JP 10157979A JP 10157979 A JP10157979 A JP 10157979A JP S5624936 A JPS5624936 A JP S5624936A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- aluminum
- entire surface
- aluminum layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To smoothly etch an aluminum layer formed on an Si substrate in the semiconductor device and to eliminate aluminum residue thereon by heat treating the aluminum layer at high temperature when etching the aluminum layer to form a mask film thereon, and pretreating it using fluoric acid prior to the etching process. CONSTITUTION:An SiO2 film 2 is coated on the Si substrate 1, the aluminum layer 3 is evaporated on the entire surface thereof, and is heat treated at high temperature or 450 deg.C for 30min in N2 gas atmosphere. Then, a photoresist film 4 is coated on the entire surface, is exposed with light using a photomask 5, is then developed, and the film 4 is formed into desired pattern. Thereafter, before the layer 3 is etched, the entire surface is pretreated using fluoric acid, and the layer 3 is then etched to form predetermined pattern, and the film 4 is subsequently removed therefrom. In this manner, an Al2O3 film formed on the surface of the layer 3 can be effectively removed, and is not formed on the film 2 exposed with aluminum residue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10157979A JPS5624936A (en) | 1979-08-06 | 1979-08-06 | Etching of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10157979A JPS5624936A (en) | 1979-08-06 | 1979-08-06 | Etching of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5624936A true JPS5624936A (en) | 1981-03-10 |
Family
ID=14304295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10157979A Pending JPS5624936A (en) | 1979-08-06 | 1979-08-06 | Etching of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624936A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498178A (en) * | 1972-05-10 | 1974-01-24 |
-
1979
- 1979-08-06 JP JP10157979A patent/JPS5624936A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498178A (en) * | 1972-05-10 | 1974-01-24 |
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