JPS6173330A - Equipment for manufacturing semiconductor device - Google Patents
Equipment for manufacturing semiconductor deviceInfo
- Publication number
- JPS6173330A JPS6173330A JP59194980A JP19498084A JPS6173330A JP S6173330 A JPS6173330 A JP S6173330A JP 59194980 A JP59194980 A JP 59194980A JP 19498084 A JP19498084 A JP 19498084A JP S6173330 A JPS6173330 A JP S6173330A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- wafer
- periphery
- coating
- coated surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052753 mercury Inorganic materials 0.000 abstract description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体デバイス製造工程において用いられる
半導体デバイス製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus used in a semiconductor device manufacturing process.
半導体デバイス製造では、感光性樹脂を用いたパターン
形成技術が広く適用されている。この感光性樹脂には、
感光することによって不溶となるネガ型レジストと、感
光することによって溶解度が大きくなるレジストがある
。Pattern forming techniques using photosensitive resins are widely applied in semiconductor device manufacturing. This photosensitive resin has
There are negative resists that become insoluble when exposed to light, and resists that become more soluble when exposed to light.
イ、ガ型レジストを用いＡ場合には、つ、バー周辺を意
図的に未露光領域とすることにより、レジスト・パター
ン形成において、レジストを溶解させウェハー表面を露
出させることが容易に可能である。B. In the case of A using a G-type resist, by intentionally leaving the area around the bar unexposed, it is easy to dissolve the resist and expose the wafer surface during resist pattern formation. .
一方、ポジ型レジストを用いる場合には、逆に意図的に
露光領域としなければウェハ周辺部には、パターン形成
後もレジストが残っている。On the other hand, when a positive resist is used, the resist remains at the periphery of the wafer even after pattern formation unless the exposed area is intentionally exposed.
このウェハー周辺部のレジスト２は、例えば第３図（ａ
）に示すようなウェハー・クランプ１による機械的接触
によって、容易に剥離し、ウェハーのデバイス・パター
ン３上のレジスト残滓４となる。The resist 2 at the periphery of the wafer is, for example, as shown in FIG.
) is easily peeled off by mechanical contact by the wafer clamp 1 as shown in FIG.
こうしたレジスト残滓は、高い集積度を特徴とするＬＳ
Ｉ等の半導体デバイス製造において、致命的なパターン
欠陥等゛を起こし、製造上の歩留りを低下させる。These resist residues are used for LS, which is characterized by a high degree of integration.
In the manufacture of semiconductor devices such as I, fatal pattern defects etc. are caused and the manufacturing yield is reduced.
本発明の目的は、ポジ型レジストを用いる場合において
ウェハー周辺部を有効に表面露出させる装置を提供する
ことにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an apparatus that effectively exposes the peripheral area of a wafer when using a positive resist.
本発明は回転するウエノ・−の表面上にポジ型レジスト
を塗布する塗布装置に、レジスト塗布工程にてウェハー
周辺部のレジスト塗布面を選択的に露光する露光機を装
備したことを特徴とする半導体デバイス製造装置でちる
。The present invention is characterized in that a coating device that coats a positive resist onto the surface of a rotating wafer is equipped with an exposure machine that selectively exposes the resist-coated surface around the wafer in the resist coating process. Semiconductor device manufacturing equipment.
以下に本発明の一実施例を図により説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図において、レジスト塗布装置５はウエノ嶌−真空
吸着しこれを回転するチャック６と、該チャック６の真
上に設置される滴下ノズル７とを有し、滴下ノズル７よ
り滴下されたレジスト９をウェハー８の回転力にてその
表面上に均一な膜厚に塗布する。In FIG. 1, a resist coating device 5 has a chuck 6 that vacuum-chucks a Uenoshima and rotates it, and a dripping nozzle 7 installed directly above the chuck 6. 9 is applied onto the surface of the wafer 8 to a uniform thickness by the rotational force of the wafer 8.
本発明はこのレジスト塗布装置５に、レジスト塗布工程
にて、ウェハー周辺部のレジスト塗布面を露光する露光
機を装備したものである。この露光機はウェハー周辺部
のレジスト塗布後８ａをウェハー中央のレジスト塗布面
８ｂより隔離する遮光カバー１０と、遮光カバー１０に
て隔離されたレジスト塗布面８ａに照射する水銀ランプ
ｌｌａとを有し、レジスト塗布工程にて、ウェハーを回
転させつつ、又は一定角度づつ回転させて、レジスト塗
布中或いはレジスト塗布後、ウニ・・−周辺を一定幅で
環状に露光する。According to the present invention, the resist coating apparatus 5 is equipped with an exposure machine that exposes the resist coated surface of the wafer periphery in the resist coating process. This exposure machine has a light-shielding cover 10 that isolates the resist-coated surface 8a at the periphery of the wafer from the resist-coated surface 8b at the center of the wafer, and a mercury lamp lla that irradiates the resist-coated surface 8a isolated by the light-shielding cover 10. In the resist coating process, the wafer is rotated or rotated at a constant angle, and the periphery of the sea urchin is exposed in a circular manner with a constant width during or after resist coating.
したがって、レジスト塗布時にウエノ）−周辺部のみに
予備的露光が行なわれるため、レジスト現像後にウェハ
ー周辺部のウェハー表面８Ｃが露出する。そのため、ウ
ェノ・・クランプ１をこのウェハー表面８Ｇに接触させ
ることになるから、レジスト残滓の心配がなくなる。Therefore, since preliminary exposure is performed only on the wafer periphery during resist application, the wafer surface 8C at the wafer periphery is exposed after resist development. Therefore, since the wafer clamp 1 is brought into contact with the wafer surface 8G, there is no need to worry about resist residue.
前実施例の露光機では遮光カバー１０にて、露光するレ
ジスト塗布面をウェハー周辺のみに限定するようにした
が、第２図の実施例では光ファイバー１２にて水銀ラン
プｌｌｂの照射光を集光させてこれをウェハー周辺部の
レジスト塗布面のみに制限して照射し露光を行なうもの
で、第１の実施例と同様な効果が得られる。その際、レ
ンズ１３と光ファイバー１２との間に７ヤツター１４を
設け、光ファイバー１２の光路の開閉制御を行ないなが
ら、露光を行なうことは露光する上で有効である。また
、本実施例のように光ファイバー１２を用いる場合には
、ウェハー回転機構（チャック６など）と水銀ランプｌ
ｌｂとを隔離することができ、装置の構造設計上の自由
度を増す等の利点がある。In the exposure machine of the previous embodiment, the resist coated surface to be exposed was limited to only the periphery of the wafer using the light-shielding cover 10, but in the embodiment of FIG. Then, the irradiation is performed by restricting the irradiation to only the resist-coated surface at the periphery of the wafer, and the same effect as in the first embodiment can be obtained. At this time, it is effective to provide a seven-layer lens 14 between the lens 13 and the optical fiber 12 and to perform exposure while controlling the opening and closing of the optical path of the optical fiber 12. In addition, when using the optical fiber 12 as in this embodiment, the wafer rotation mechanism (chuck 6, etc.) and the mercury lamp l
This has the advantage of increasing the degree of freedom in the structural design of the device.
本発明は以上説明したように、ポジ型レジスト塗布工程
にてウェハー周辺部のレジスト塗布面を露光し、レジス
ト現像後に該ウニノー−周辺部の表面を露出するように
したので、ウエノ１−・クランプにて該ウェハーをハン
ドリングする際に、レジスト残滓が発生せず、ウェハー
上のデバイス・パターンを汚すことがないから、デバイ
ス製造上の歩留りを向上できる効果を有するものである
。As explained above, the present invention exposes the resist-coated surface at the periphery of the wafer in the positive resist coating process, and exposes the surface at the periphery of the wafer after resist development. When the wafer is handled at the wafer, no resist residue is generated and the device pattern on the wafer is not contaminated, which has the effect of improving the yield in device manufacturing.
第１図は本発明の一実施例を示す断面図、第２図は本発
明の他の実施例を示す断面図、第３図（ａ）は従来技術
によるポジ型レジスト塗布ウェハーの平面図、第３図［
有］）は本発明によるポジ型レジスト４女＾ 、−＾豆
需闇４よフ
５・・・・・・レジスト塗布装置、 ６・・・・・チ
ャック７・・・・・・滴下ノズル ８・・・・
・・ウェハー１０・・・・・・遮光カバー １１
ａ、ｌｌｂ・・・・・・水銀ランプ１２・・・・・・光
ファイバー
第２図FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a sectional view showing another embodiment of the invention, and FIG. 3(a) is a plan view of a positive resist coated wafer according to the prior art. Figure 3 [
]) is a positive resist according to the present invention 4, -^ Bean demand 4, 5... Resist coating device, 6... Chuck 7... Dripping nozzle 8・・・・・・
... Wafer 10 ... Light-shielding cover 11
a, llb...Mercury lamp 12...Optical fiber Figure 2
Claims (1)
布する塗布装置に、レジスト塗布工程にてウェハー周辺
部のレジスト塗布面を選択的に露光する露光機を装備し
たことを特徴とする半導体デバイス製造装置。(1) A semiconductor device characterized in that a coating device that coats a positive resist onto the surface of a rotating wafer is equipped with an exposure machine that selectively exposes the resist-coated surface around the wafer in the resist coating process. Manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59194980A JPS6173330A (en) | 1984-09-18 | 1984-09-18 | Equipment for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59194980A JPS6173330A (en) | 1984-09-18 | 1984-09-18 | Equipment for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6173330A true JPS6173330A (en) | 1986-04-15 |
Family
ID=16333537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59194980A Pending JPS6173330A (en) | 1984-09-18 | 1984-09-18 | Equipment for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6173330A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021114A (en) * | 1988-01-29 | 1990-01-05 | Ushio Inc | Exposure of periphery of wafer and apparatus |
| US4910549A (en) * | 1987-08-28 | 1990-03-20 | Tokyo Electron Limited | Exposure method and apparatus therefor |
| JPH02114628A (en) * | 1988-10-25 | 1990-04-26 | Ushio Inc | Peripheral exposure of wafer |
| JPH02114629A (en) * | 1988-10-25 | 1990-04-26 | Ushio Inc | Peripheral exposure of wafer |
| JPH0260229U (en) * | 1988-10-25 | 1990-05-02 | ||
| JPH0260230U (en) * | 1988-10-25 | 1990-05-02 | ||
| JPH02288326A (en) * | 1989-04-28 | 1990-11-28 | Dainippon Screen Mfg Co Ltd | Apparatus for exposing periphery of wafer to light |
| US5028955A (en) * | 1989-02-16 | 1991-07-02 | Tokyo Electron Limited | Exposure apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868748A (en) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | Photomask and developing method using said mask |
| JPS5892221A (en) * | 1981-11-27 | 1983-06-01 | Nec Kyushu Ltd | Semiconductor substrate exposure device |
| JPS58139144A (en) * | 1982-02-13 | 1983-08-18 | Nec Corp | Matching exposure device |
| JPS59138335A (en) * | 1983-01-28 | 1984-08-08 | Toshiba Corp | Exposing device for resist on end portion of wafer |
| JPS59158520A (en) * | 1983-02-28 | 1984-09-08 | Toshiba Corp | Irradiating device |
-
1984
- 1984-09-18 JP JP59194980A patent/JPS6173330A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868748A (en) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | Photomask and developing method using said mask |
| JPS5892221A (en) * | 1981-11-27 | 1983-06-01 | Nec Kyushu Ltd | Semiconductor substrate exposure device |
| JPS58139144A (en) * | 1982-02-13 | 1983-08-18 | Nec Corp | Matching exposure device |
| JPS59138335A (en) * | 1983-01-28 | 1984-08-08 | Toshiba Corp | Exposing device for resist on end portion of wafer |
| JPS59158520A (en) * | 1983-02-28 | 1984-09-08 | Toshiba Corp | Irradiating device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910549A (en) * | 1987-08-28 | 1990-03-20 | Tokyo Electron Limited | Exposure method and apparatus therefor |
| JPH021114A (en) * | 1988-01-29 | 1990-01-05 | Ushio Inc | Exposure of periphery of wafer and apparatus |
| JPH02114628A (en) * | 1988-10-25 | 1990-04-26 | Ushio Inc | Peripheral exposure of wafer |
| JPH02114629A (en) * | 1988-10-25 | 1990-04-26 | Ushio Inc | Peripheral exposure of wafer |
| JPH0260229U (en) * | 1988-10-25 | 1990-05-02 | ||
| JPH0260230U (en) * | 1988-10-25 | 1990-05-02 | ||
| US5028955A (en) * | 1989-02-16 | 1991-07-02 | Tokyo Electron Limited | Exposure apparatus |
| JPH02288326A (en) * | 1989-04-28 | 1990-11-28 | Dainippon Screen Mfg Co Ltd | Apparatus for exposing periphery of wafer to light |
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