JPH069487Y2 - Wafer edge exposure equipment - Google Patents
Wafer edge exposure equipmentInfo
- Publication number
- JPH069487Y2 JPH069487Y2 JP1988138181U JP13818188U JPH069487Y2 JP H069487 Y2 JPH069487 Y2 JP H069487Y2 JP 1988138181 U JP1988138181 U JP 1988138181U JP 13818188 U JP13818188 U JP 13818188U JP H069487 Y2 JPH069487 Y2 JP H069487Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- light
- peripheral portion
- lens system
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【考案の詳細な説明】 〔産業上の利用分野〕 この発明は、IC、LSI、その他のエレクトロニクス
素子における部品の加工における微細パターンの形成工
程において、シリコンウエハに代表される半導体基板、
あるいは誘電体、金属、絶縁体等の基板に塗布されたレ
ジストの内の該基板周辺部の不用レジストを現像工程で
除去するためのウエハ周辺露光装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a semiconductor substrate typified by a silicon wafer in the step of forming a fine pattern in the processing of components in ICs, LSIs, and other electronic elements,
Alternatively, the present invention relates to a wafer peripheral exposure apparatus for removing an unnecessary resist in the peripheral portion of a substrate such as a dielectric, a metal or an insulator coated on the substrate in a developing process.
ICやLSI等の製造工程においては、微細パターンを
形成するにあたって、シリコンウエハ等の表面にレジス
トを塗布し、さらに露光、現像を行いレジストパターン
を形成することが行われる。次に、このレジストパター
ンをマスクにしてイオン注入、エッチング、リフトオフ
等の加工が行われる。In the manufacturing process of ICs, LSIs, etc., when forming a fine pattern, a resist is applied to the surface of a silicon wafer or the like, and then exposure and development are performed to form a resist pattern. Next, using this resist pattern as a mask, processing such as ion implantation, etching and lift-off is performed.
通常、レジストの塗布はスピンコート法によって行われ
る。スピンコート法はウエハ表面の中心位置にレジスト
を注ぎながらウエハを回転させ、遠心力によってウエハ
の全表面にレジストを塗布するものである。しかし、ウ
エハ周辺部では大部分の場合正しく回路パターンを描く
ことができず、例え描けたとしても歩留まりが悪い。ウ
エハ周辺部のレジストは回路パターン形成にあたっては
ほとんど不要なレジストである。またレジストの塗布さ
れたウエハはいろいろな処理工程及びいろいろな方式で
搬送される。この時、ウエハ周辺部を機械的につかんで
保持したり、ウエハ周辺部がウエハカセット等の収納器
の部にこすれたりする。この時、ウエハ周辺部の不要レ
ジストがとれてウエハのパターン形成部に付着すると、
正しいパターン形成ができなくなり、歩留まりを下げ
る。Usually, the resist is applied by a spin coating method. The spin coating method is a method of rotating a wafer while pouring the resist on the center position of the wafer surface and applying a resist to the entire surface of the wafer by centrifugal force. However, in most cases, the circuit pattern cannot be accurately drawn on the peripheral portion of the wafer, and the yield is poor even if it can be drawn. The resist around the wafer is a resist that is almost unnecessary for forming a circuit pattern. The resist-coated wafer is transported by various processing steps and various methods. At this time, the peripheral portion of the wafer is mechanically grasped and held, or the peripheral portion of the wafer is rubbed against a container such as a wafer cassette. At this time, if unnecessary resist around the wafer is removed and adheres to the pattern forming portion of the wafer,
Correct pattern formation cannot be performed and the yield is reduced.
ウエハ周辺部に残留した不要レジストが「ゴミ」となっ
て歩留まりを低下させることは、特に集積回路の高機能
化、微細化が進みつつある現在、深刻な問題となってい
る。It is a serious problem that the unnecessary resist remaining on the peripheral portion of the wafer becomes "dust" and the yield is lowered, especially in the present situation where the integrated circuit is highly functionalized and miniaturized.
そこで、最近ではパターン形成のための露光工程とは別
にウエハ周辺部の不要レジストを現像工程で除去するた
めに別途露光することが行われている。Therefore, recently, in addition to the exposure step for pattern formation, separate exposure is performed to remove unnecessary resist in the peripheral portion of the wafer in the development step.
第3図(a)、(b)はこのような不要レジスト除去の
ための従来のウエハ周辺露光装置の概略説明図である。FIGS. 3A and 3B are schematic explanatory views of a conventional wafer peripheral exposure apparatus for removing such unnecessary resist.
搬送系(不図示)により回転ステージ71の上にウエハ
70を設置し、回転ステージ71を回転させ、センサ7
2により、ウエハ70のオリエンテーションフラット7
3を検出し、このオリエンテーションフラット73が概
略所定の位置にきた時回転をとめ、次にオリエンテーシ
ョンフラットあて板74a及びピン74b、74c、7
4dによりセンタリングとオリエンテーションフラット
73の位置出しを行う。The wafer 70 is placed on the rotary stage 71 by a transfer system (not shown), the rotary stage 71 is rotated, and the sensor 7
2, the orientation flat 7 of the wafer 70
3 is detected, the rotation is stopped when the orientation flat 73 reaches a substantially predetermined position, and then the orientation flat contact plate 74a and the pins 74b, 74c, 7
4d performs centering and positioning of the orientation flat 73.
上記の位置出し後、ウエハ70を回転させながら、ミラ
ー78、ランプ79、シャッタ80等からなる光源部か
らの放射光を受け入れる位置にその一端75aを、他端
75bをウエハ70の周辺近傍に配置したオプチカルフ
ァイバ81により、レンズ系を通して、ウエハ周辺部7
6を露光する。この場合、円形の照射区域Eを中心にし
て、レンズ系内の多重繰り返し反射や漏光のため、リン
グ状の弱い「シマ模様」77が生ずる。したがって処理
時間を短縮するために、照射区域の照射強度を大きくす
ると、この模様部分も露光され、せっかくシャープな露
光境界Pを作ろうとしても必しも良好な結果が得られな
い。After the above-mentioned positioning, while rotating the wafer 70, one end 75a thereof is arranged at a position for receiving the radiated light from the light source portion including the mirror 78, the lamp 79, the shutter 80, etc., and the other end 75b thereof is arranged in the vicinity of the periphery of the wafer 70. With the optical fiber 81, the wafer peripheral portion 7 is passed through the lens system.
6 is exposed. In this case, a ring-shaped weak "striped pattern" 77 occurs due to multiple repeated reflections and leakage of light in the lens system centering on the circular irradiation area E. Therefore, if the irradiation intensity of the irradiation area is increased in order to shorten the processing time, this pattern portion is also exposed, and even if an attempt is made to make a sharp exposure boundary P, a good result cannot necessarily be obtained.
本考案は、上記リング状のシマ模様の生じないようにし
たウエハ周辺露光装置の提供を目的とする。An object of the present invention is to provide a wafer peripheral exposure apparatus that does not cause the ring-shaped stripe pattern.
上記目的を達成するため、本考案においては、ウエハ周
辺露光装置を、 光源部と、一端が光源部よりの放射光を受け入れる位置
にあり他端がウエハ周辺部の表面近傍に位置したオプチ
カルファイバと、該他端に配置されたレンズ系と、該レ
ンズ系とウエハ周辺部の表面との間に配置された遮光手
段とよりなり、該遮光手段は、筒部とアパーチャを設け
た底板とより構成する。In order to achieve the above object, in the present invention, a wafer peripheral exposure apparatus includes a light source section and an optical fiber whose one end is in a position to receive light emitted from the light source section and whose other end is located near the surface of the wafer peripheral section. , A lens system arranged at the other end, and a light-shielding means arranged between the lens system and the surface of the peripheral portion of the wafer. The light-shielding means is composed of a cylindrical portion and a bottom plate provided with an aperture. To do.
筒部で漏光を遮断し、底板で多重繰り返し反射を防止し
たので、リング状のシマ模様を消すことができる。Since the light leakage is blocked by the tube portion and the multiple reflections are prevented by the bottom plate, the ring-shaped stripe pattern can be erased.
第1図は、本考案の実施例の説明図、第2図(a)
(b)は遮光手段の説明図であって、第2図(a)は一
部分切開してある。図において82は、オプチカルファ
イバ81の他端75bをおおうように設けられたレンズ
系であって、ウエハ70の周辺部76に、光源部からの
放射光が集光するようにする。そして、オプチカルファ
イバの他端を方形に束ねておき、照射区域を方形にし、
したがって遮光手段のアパーチャ1も方形にしておく。
遮光手段は、中空状の角筒2と、底板3とより成り、反
射の少ない黒色塗料が塗布されている。筒2は、四面必
しも必要ではなく、一面なくとも、そのない部分の方
を、ウエハ70に対して反射側へ向くように取り付けれ
ば、ウエハ70におけるシマ模様の防止効果は同じであ
る。ウエハ70と底板3との間隙dは1mm以下、大体0.
5mm〜0.2mm程度であって、底板に黒色塗料が塗布させて
いるとシマ模様の防止効果が大きい。FIG. 1 is an explanatory view of an embodiment of the present invention, and FIG. 2 (a).
(B) is an explanatory view of the light shielding means, and FIG. 2 (a) is partially cut out. In the figure, reference numeral 82 denotes a lens system provided so as to cover the other end 75b of the optical fiber 81 so that the light emitted from the light source unit is condensed on the peripheral portion 76 of the wafer 70. Then, bundle the other end of the optical fiber into a square, and make the irradiation area square,
Therefore, the aperture 1 of the light blocking means is also made square.
The light-shielding means is composed of a hollow rectangular tube 2 and a bottom plate 3, and is coated with a black paint which has less reflection. The cylinder 2 does not necessarily have to have four surfaces, and even if there is not one surface, if the part without the surface is attached so as to face the wafer 70 toward the reflection side, the effect of preventing the stripe pattern on the wafer 70 is the same. The gap d between the wafer 70 and the bottom plate 3 is 1 mm or less, which is about 0.
It is about 5 mm to 0.2 mm, and if a black paint is applied to the bottom plate, the effect of preventing a stripe pattern is great.
以上のとうり、オプチカルファイバの他端からレンズ系
を介してウエハ周辺部を露光する場合、レンズ系とウエ
ハとの間に、ウエハ表面に極接近した底板を有する遮光
手段を設け、底板に設けるアパーチャも、ファイバの束
ねた形状と相似的に形成し、かつ黒色塗料を塗布してい
るので、レンズ系を通ってくる漏光、迷光、多重反射等
が抑制され、したがって照射区域を中心としたリング状
のシマ模様を確実に抑制できる。特に照射区域は方形に
すると区域内の露光量の均一化に都合が良い。As described above, when exposing the peripheral portion of the wafer from the other end of the optical fiber through the lens system, the light shielding means having the bottom plate extremely close to the wafer surface is provided between the lens system and the wafer and provided on the bottom plate. Since the aperture is formed similar to the bundled shape of the fibers and is coated with black paint, light leakage, stray light, multiple reflections, etc. coming through the lens system are suppressed, and therefore the ring centered around the irradiation area. The striped pattern can be reliably suppressed. In particular, if the irradiation area is rectangular, it is convenient to make the exposure amount uniform in the area.
尚、このウエハ周辺露光装置は、第2図(a)の遮光手
段を利用すると周辺部以外の極所区域の露光にも利用で
きる。This wafer edge exposure apparatus can also be used for exposure of polar regions other than the peripheral portion by using the light shielding means of FIG. 2 (a).
第1図は、本考案のウエハ露光装置の要部の概略説明
図、第2図(a)、(b)は遮光手段の説明図、第3図
(a)、(b)は従来のウエハ周辺露光装置の説明図で
ある。 図において、1はアパーチャ、2は角筒、3は底板、7
0はウエハ、76はウエハの周辺部、81はオプチカル
ファイバ、82はレンズ系、83は遮光手段を示す。FIG. 1 is a schematic explanatory view of a main part of a wafer exposure apparatus of the present invention, FIGS. 2 (a) and 2 (b) are explanatory views of a light shielding means, and FIGS. 3 (a) and 3 (b) are conventional wafers. It is explanatory drawing of a peripheral exposure apparatus. In the figure, 1 is an aperture, 2 is a square tube, 3 is a bottom plate, and 7
Reference numeral 0 is a wafer, 76 is a peripheral portion of the wafer, 81 is an optical fiber, 82 is a lens system, and 83 is a light shielding means.
Claims (1)
け入れる位置にあり他端がウエハ周辺部の表面近傍に位
置したオプチカルファイバと、該他端に配置されたレン
ズ系と、該レンズ系とウエハ周辺部の表面との間に配置
された遮光手段とよりなり、該遮光手段は、筒部とアパ
ーチャを設けた底板とよりなることを特徴とするウエハ
周辺露光装置。1. A light source section, an optical fiber having one end at a position for receiving light emitted from the light source section and the other end located near a surface of a peripheral portion of a wafer, a lens system arranged at the other end, 1. A wafer peripheral exposure apparatus comprising: a light shielding means arranged between a lens system and a surface of a peripheral portion of the wafer, wherein the light shielding means comprises a cylindrical portion and a bottom plate provided with an aperture.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988138181U JPH069487Y2 (en) | 1988-10-25 | 1988-10-25 | Wafer edge exposure equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988138181U JPH069487Y2 (en) | 1988-10-25 | 1988-10-25 | Wafer edge exposure equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0260229U JPH0260229U (en) | 1990-05-02 |
JPH069487Y2 true JPH069487Y2 (en) | 1994-03-09 |
Family
ID=31400283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988138181U Expired - Lifetime JPH069487Y2 (en) | 1988-10-25 | 1988-10-25 | Wafer edge exposure equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH069487Y2 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060724A (en) * | 1983-09-14 | 1985-04-08 | Toshiba Corp | Semiconductor exposing device |
JPS6173330A (en) * | 1984-09-18 | 1986-04-15 | Nec Corp | Equipment for manufacturing semiconductor device |
-
1988
- 1988-10-25 JP JP1988138181U patent/JPH069487Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0260229U (en) | 1990-05-02 |
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