JPS5892221A - Semiconductor substrate exposure device - Google Patents

Semiconductor substrate exposure device

Info

Publication number
JPS5892221A
JPS5892221A JP19033581A JP19033581A JPS5892221A JP S5892221 A JPS5892221 A JP S5892221A JP 19033581 A JP19033581 A JP 19033581A JP 19033581 A JP19033581 A JP 19033581A JP S5892221 A JPS5892221 A JP S5892221A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
substrate
semiconductor
section
light
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19033581A
Inventor
Toru Imamura
Original Assignee
Nec Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Abstract

PURPOSE:To prevent a decrease in yield and that in quality by the exfoliation of a photoresist by a method wherein a substrate applying vacuum adsorption and rotary motion to a semiconductor substrate with the photoresist, a light source irradiating ultraviolet rays at the peripheral section and side of the semiconductor substrate and an optical system are provided. CONSTITUTION:Vacuum adsorption is applied to the central part at the rear of a semiconductor substrate 1 executed a predetermined photoresist application process and a substrate 3 is fixed to the semiconductor substrate 1. Then, rotary motion is applied to the semiconductor substrate 1 by a pulse motor 2 connected to the substrate. At the same time, light from a mercury lamp 5 producing ultraviolet rays is condensed into the same direction by a concave reflecting mirror 6 to aim the ultraviolet rays at only the peripheral section and side of the semiconductor substrate 1 from a light projection section 9 through glass fiber 8. At that time, if the center of the semiconductor substrate 1 is agreed with the rotating center of the substrate 3, position control to aim the irradiated light from the light projection section 9 at only the peripheral section and side is possible.
JP19033581A 1981-11-27 1981-11-27 Semiconductor substrate exposure device Pending JPS5892221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19033581A JPS5892221A (en) 1981-11-27 1981-11-27 Semiconductor substrate exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19033581A JPS5892221A (en) 1981-11-27 1981-11-27 Semiconductor substrate exposure device

Publications (1)

Publication Number Publication Date
JPS5892221A true true JPS5892221A (en) 1983-06-01

Family

ID=16256473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19033581A Pending JPS5892221A (en) 1981-11-27 1981-11-27 Semiconductor substrate exposure device

Country Status (1)

Country Link
JP (1) JPS5892221A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173330A (en) * 1984-09-18 1986-04-15 Nec Corp Equipment for manufacturing semiconductor device
JPS62128121A (en) * 1985-11-28 1987-06-10 Fujitsu Ltd Manufacture of semiconductor device
JPS62276828A (en) * 1986-02-20 1987-12-01 Nec Corp Apparatus for manufacture of semiconductor device
JPS63258019A (en) * 1987-04-15 1988-10-25 Nec Kyushu Ltd Resistering aligner
JPS6486520A (en) * 1987-11-04 1989-03-31 Ricoh Kk Exposure method
EP0325930A1 (en) * 1988-01-29 1989-08-02 Ushio Denki Method of exposing a peripheral part of wafer
JPH01194324A (en) * 1988-01-29 1989-08-04 Ushio Inc Method of removing unnecessary resist
JPH0212811A (en) * 1988-06-30 1990-01-17 Ushio Inc Aligning method for wafer periphery
JPH0287518A (en) * 1988-09-26 1990-03-28 Ushio Inc Exposure of wafer periphery
JPH02114629A (en) * 1988-10-25 1990-04-26 Ushio Inc Peripheral exposure of wafer
JPH02125420A (en) * 1988-11-04 1990-05-14 Ushio Inc Exposure amount control system for wafer periphery exposure
US5168021A (en) * 1989-09-21 1992-12-01 Ushio Denki Method for exposing predetermined area of peripheral part of wafer
US5204224A (en) * 1988-09-26 1993-04-20 Ushio Denki Method of exposing a peripheral part of a wafer
US5361121A (en) * 1990-05-16 1994-11-01 Nikon Corporation Periphery exposing method and apparatus therefor
US8033778B2 (en) 2007-02-01 2011-10-11 Daifuku Co., Ltd. Elevating conveyance device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173330A (en) * 1984-09-18 1986-04-15 Nec Corp Equipment for manufacturing semiconductor device
JPS62128121A (en) * 1985-11-28 1987-06-10 Fujitsu Ltd Manufacture of semiconductor device
JPS62276828A (en) * 1986-02-20 1987-12-01 Nec Corp Apparatus for manufacture of semiconductor device
JPS63258019A (en) * 1987-04-15 1988-10-25 Nec Kyushu Ltd Resistering aligner
JPS6486520A (en) * 1987-11-04 1989-03-31 Ricoh Kk Exposure method
JPH01194324A (en) * 1988-01-29 1989-08-04 Ushio Inc Method of removing unnecessary resist
EP0325930A1 (en) * 1988-01-29 1989-08-02 Ushio Denki Method of exposing a peripheral part of wafer
JPH0212811A (en) * 1988-06-30 1990-01-17 Ushio Inc Aligning method for wafer periphery
JPH0750676B2 (en) * 1988-06-30 1995-05-31 ウシオ電機株式会社 Wafer peripheral exposure method
US5204224A (en) * 1988-09-26 1993-04-20 Ushio Denki Method of exposing a peripheral part of a wafer
JPH0750677B2 (en) * 1988-09-26 1995-05-31 ウシオ電機株式会社 Wafer peripheral exposure method
JPH0287518A (en) * 1988-09-26 1990-03-28 Ushio Inc Exposure of wafer periphery
JPH02114629A (en) * 1988-10-25 1990-04-26 Ushio Inc Peripheral exposure of wafer
JPH02125420A (en) * 1988-11-04 1990-05-14 Ushio Inc Exposure amount control system for wafer periphery exposure
US5168021A (en) * 1989-09-21 1992-12-01 Ushio Denki Method for exposing predetermined area of peripheral part of wafer
US5361121A (en) * 1990-05-16 1994-11-01 Nikon Corporation Periphery exposing method and apparatus therefor
US8033778B2 (en) 2007-02-01 2011-10-11 Daifuku Co., Ltd. Elevating conveyance device

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