JPS54128281A - Selecting process mask - Google Patents

Selecting process mask

Info

Publication number
JPS54128281A
JPS54128281A JP3550378A JP3550378A JPS54128281A JP S54128281 A JPS54128281 A JP S54128281A JP 3550378 A JP3550378 A JP 3550378A JP 3550378 A JP3550378 A JP 3550378A JP S54128281 A JPS54128281 A JP S54128281A
Authority
JP
Japan
Prior art keywords
occurrence
film
psg
thin film
crystal defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3550378A
Other languages
Japanese (ja)
Inventor
Hideaki Uchida
Takeo Kamiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3550378A priority Critical patent/JPS54128281A/en
Publication of JPS54128281A publication Critical patent/JPS54128281A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To prevent occurrence of the crystal defect for the semiconductor substrate as well as to avoid occurrence of the pinhole for the mask itself.
CONSTITUTION: PSG thin film 6 is provided between Si3N4 thin film 4 and 5. Thus, the number of the up-down pierced hole is reduced greatly regardless of existence of pinholes on film 4 and 5, and furthermore film 6 functions as the buffer component to the strain caused by the heat process. As a result, the occurrence of the crystal defect can be prevented for Si substrate 1. SiO2, PIQ and the like can be also used in addition to PSG.
COPYRIGHT: (C)1979,JPO&Japio
JP3550378A 1978-03-29 1978-03-29 Selecting process mask Pending JPS54128281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3550378A JPS54128281A (en) 1978-03-29 1978-03-29 Selecting process mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3550378A JPS54128281A (en) 1978-03-29 1978-03-29 Selecting process mask

Publications (1)

Publication Number Publication Date
JPS54128281A true JPS54128281A (en) 1979-10-04

Family

ID=12443550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3550378A Pending JPS54128281A (en) 1978-03-29 1978-03-29 Selecting process mask

Country Status (1)

Country Link
JP (1) JPS54128281A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325929A (en) * 1986-07-17 1988-02-03 Nec Corp Semiconductor integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973976A (en) * 1972-11-15 1974-07-17
JPS5258472A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Selective oxidation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973976A (en) * 1972-11-15 1974-07-17
JPS5258472A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Selective oxidation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325929A (en) * 1986-07-17 1988-02-03 Nec Corp Semiconductor integrated circuit

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