JPS54102967A - Gas-phase crystal growth method for multiple semiconductor - Google Patents
Gas-phase crystal growth method for multiple semiconductorInfo
- Publication number
- JPS54102967A JPS54102967A JP1012178A JP1012178A JPS54102967A JP S54102967 A JPS54102967 A JP S54102967A JP 1012178 A JP1012178 A JP 1012178A JP 1012178 A JP1012178 A JP 1012178A JP S54102967 A JPS54102967 A JP S54102967A
- Authority
- JP
- Japan
- Prior art keywords
- ampule
- exhaustion
- tube
- substrate
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: To prevent the lowering of the crystal growing speed and thus to obtain a uniform multiple semiconductor crystal by drilling a small hole to the ampule storing the substrate and the material polycrystal and then performing the crystal growth with exhaustion inside the ampule.
CONSTITUTION: Substrate 4 and raw material polycrystal 3 which is the supply source material are stored into quartz ampule 2 with a fixed space secured between them. Exhasuting small hole 2' is drilled to ampule 2, and the ampule is then stored into outer tube 1 one end of which is formed into an exhaustion tube. Then exhaustion mouth of tube 1 is connected to the exhaustion tube, and the other end is sealed up to perform exhaustion. The exhaustion is continued long enough until the inside of the tube reaches a fixed degree of vacuum, and then the tube is put into heating furnace 6 featuring the temperature distribution corresponding to the both crystals in ampule 2. In this case, substrate 4 is located in the low-temperature region, and crystal 3 is positioned at the high-temperature region each. And the prescribed temperature is kept inside firnace 6, and thus the polycrystal is evaporated and deposits on substrate 4 to be formed into a single crystal.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1012178A JPS5948534B2 (en) | 1978-01-31 | 1978-01-31 | Vapor phase crystal growth method for multi-component semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1012178A JPS5948534B2 (en) | 1978-01-31 | 1978-01-31 | Vapor phase crystal growth method for multi-component semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54102967A true JPS54102967A (en) | 1979-08-13 |
JPS5948534B2 JPS5948534B2 (en) | 1984-11-27 |
Family
ID=11741459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1012178A Expired JPS5948534B2 (en) | 1978-01-31 | 1978-01-31 | Vapor phase crystal growth method for multi-component semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5948534B2 (en) |
-
1978
- 1978-01-31 JP JP1012178A patent/JPS5948534B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5948534B2 (en) | 1984-11-27 |
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