JPS54102967A - Gas-phase crystal growth method for multiple semiconductor - Google Patents

Gas-phase crystal growth method for multiple semiconductor

Info

Publication number
JPS54102967A
JPS54102967A JP1012178A JP1012178A JPS54102967A JP S54102967 A JPS54102967 A JP S54102967A JP 1012178 A JP1012178 A JP 1012178A JP 1012178 A JP1012178 A JP 1012178A JP S54102967 A JPS54102967 A JP S54102967A
Authority
JP
Japan
Prior art keywords
ampule
exhaustion
tube
substrate
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1012178A
Other languages
Japanese (ja)
Other versions
JPS5948534B2 (en
Inventor
Ryuichi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1012178A priority Critical patent/JPS5948534B2/en
Publication of JPS54102967A publication Critical patent/JPS54102967A/en
Publication of JPS5948534B2 publication Critical patent/JPS5948534B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To prevent the lowering of the crystal growing speed and thus to obtain a uniform multiple semiconductor crystal by drilling a small hole to the ampule storing the substrate and the material polycrystal and then performing the crystal growth with exhaustion inside the ampule.
CONSTITUTION: Substrate 4 and raw material polycrystal 3 which is the supply source material are stored into quartz ampule 2 with a fixed space secured between them. Exhasuting small hole 2' is drilled to ampule 2, and the ampule is then stored into outer tube 1 one end of which is formed into an exhaustion tube. Then exhaustion mouth of tube 1 is connected to the exhaustion tube, and the other end is sealed up to perform exhaustion. The exhaustion is continued long enough until the inside of the tube reaches a fixed degree of vacuum, and then the tube is put into heating furnace 6 featuring the temperature distribution corresponding to the both crystals in ampule 2. In this case, substrate 4 is located in the low-temperature region, and crystal 3 is positioned at the high-temperature region each. And the prescribed temperature is kept inside firnace 6, and thus the polycrystal is evaporated and deposits on substrate 4 to be formed into a single crystal.
COPYRIGHT: (C)1979,JPO&Japio
JP1012178A 1978-01-31 1978-01-31 Vapor phase crystal growth method for multi-component semiconductors Expired JPS5948534B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1012178A JPS5948534B2 (en) 1978-01-31 1978-01-31 Vapor phase crystal growth method for multi-component semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1012178A JPS5948534B2 (en) 1978-01-31 1978-01-31 Vapor phase crystal growth method for multi-component semiconductors

Publications (2)

Publication Number Publication Date
JPS54102967A true JPS54102967A (en) 1979-08-13
JPS5948534B2 JPS5948534B2 (en) 1984-11-27

Family

ID=11741459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1012178A Expired JPS5948534B2 (en) 1978-01-31 1978-01-31 Vapor phase crystal growth method for multi-component semiconductors

Country Status (1)

Country Link
JP (1) JPS5948534B2 (en)

Also Published As

Publication number Publication date
JPS5948534B2 (en) 1984-11-27

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