JPS5327375A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5327375A
JPS5327375A JP10231476A JP10231476A JPS5327375A JP S5327375 A JPS5327375 A JP S5327375A JP 10231476 A JP10231476 A JP 10231476A JP 10231476 A JP10231476 A JP 10231476A JP S5327375 A JPS5327375 A JP S5327375A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
impurity
injecting
changing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10231476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5436077B2 (cg-RX-API-DMAC10.html
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10231476A priority Critical patent/JPS5327375A/ja
Publication of JPS5327375A publication Critical patent/JPS5327375A/ja
Publication of JPS5436077B2 publication Critical patent/JPS5436077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP10231476A 1976-08-26 1976-08-26 Production of semiconductor device Granted JPS5327375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10231476A JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10231476A JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5327375A true JPS5327375A (en) 1978-03-14
JPS5436077B2 JPS5436077B2 (cg-RX-API-DMAC10.html) 1979-11-07

Family

ID=14324122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10231476A Granted JPS5327375A (en) 1976-08-26 1976-08-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5327375A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496983A1 (fr) * 1980-12-23 1982-06-25 Philips Nv Procede de fabrication par auto-alignement d'un dispositif semiconducteur comportant un igfet de dimension tres faible
JPS5843563A (ja) * 1981-08-27 1983-03-14 シ−メンス・アクチエンゲゼルシヤフト 高度集積ｃｍｏｓ電界効果トランジスタ回路の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496983A1 (fr) * 1980-12-23 1982-06-25 Philips Nv Procede de fabrication par auto-alignement d'un dispositif semiconducteur comportant un igfet de dimension tres faible
JPS5843563A (ja) * 1981-08-27 1983-03-14 シ−メンス・アクチエンゲゼルシヤフト 高度集積ｃｍｏｓ電界効果トランジスタ回路の製造方法

Also Published As

Publication number Publication date
JPS5436077B2 (cg-RX-API-DMAC10.html) 1979-11-07

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