JPS5390861A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5390861A
JPS5390861A JP598977A JP598977A JPS5390861A JP S5390861 A JPS5390861 A JP S5390861A JP 598977 A JP598977 A JP 598977A JP 598977 A JP598977 A JP 598977A JP S5390861 A JPS5390861 A JP S5390861A
Authority
JP
Japan
Prior art keywords
semiconductor element
manufacture
ion
stoicheiometrical
xpx
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP598977A
Other languages
Japanese (ja)
Inventor
Toshikimi Takagi
Toshiki Hijikata
Tadaaki Inoue
Koji Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP598977A priority Critical patent/JPS5390861A/en
Publication of JPS5390861A publication Critical patent/JPS5390861A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To avoid the fluctuation of the stoicheiometrical composition ration and to prevent the deterioration of the element property, by performing the thermal treatment in a phosphorus atmosphere after ion injection in case the semiconductor element is manufactured by injecting ion to GaAs1-XPX.
COPYRIGHT: (C)1978,JPO&Japio
JP598977A 1977-01-21 1977-01-21 Manufacture of semiconductor element Pending JPS5390861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP598977A JPS5390861A (en) 1977-01-21 1977-01-21 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP598977A JPS5390861A (en) 1977-01-21 1977-01-21 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5390861A true JPS5390861A (en) 1978-08-10

Family

ID=11626194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP598977A Pending JPS5390861A (en) 1977-01-21 1977-01-21 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5390861A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56949U (en) * 1979-06-18 1981-01-07
JPS5656643A (en) * 1979-10-13 1981-05-18 Sony Corp Treating device for semiconductor substrate
JPS61150340A (en) * 1984-12-25 1986-07-09 Fujitsu Ltd Manufacture of compound semiconductor device
JPH07183306A (en) * 1993-12-22 1995-07-21 Nec Corp Treating method of worked surface of compound semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56949U (en) * 1979-06-18 1981-01-07
JPS5656643A (en) * 1979-10-13 1981-05-18 Sony Corp Treating device for semiconductor substrate
JPH0132653B2 (en) * 1979-10-13 1989-07-10 Sony Corp
JPS61150340A (en) * 1984-12-25 1986-07-09 Fujitsu Ltd Manufacture of compound semiconductor device
JPH039611B2 (en) * 1984-12-25 1991-02-08 Fujitsu Ltd
JPH07183306A (en) * 1993-12-22 1995-07-21 Nec Corp Treating method of worked surface of compound semiconductor element

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