JPS5210673A - Manufacturing method of silicon semi-conductor device - Google Patents

Manufacturing method of silicon semi-conductor device

Info

Publication number
JPS5210673A
JPS5210673A JP50086884A JP8688475A JPS5210673A JP S5210673 A JPS5210673 A JP S5210673A JP 50086884 A JP50086884 A JP 50086884A JP 8688475 A JP8688475 A JP 8688475A JP S5210673 A JPS5210673 A JP S5210673A
Authority
JP
Japan
Prior art keywords
conductor device
manufacturing
silicon semi
film
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50086884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5718702B2 (ref
Inventor
Masakatsu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50086884A priority Critical patent/JPS5210673A/ja
Publication of JPS5210673A publication Critical patent/JPS5210673A/ja
Publication of JPS5718702B2 publication Critical patent/JPS5718702B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
JP50086884A 1975-07-15 1975-07-15 Manufacturing method of silicon semi-conductor device Granted JPS5210673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50086884A JPS5210673A (en) 1975-07-15 1975-07-15 Manufacturing method of silicon semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50086884A JPS5210673A (en) 1975-07-15 1975-07-15 Manufacturing method of silicon semi-conductor device

Publications (2)

Publication Number Publication Date
JPS5210673A true JPS5210673A (en) 1977-01-27
JPS5718702B2 JPS5718702B2 (ref) 1982-04-17

Family

ID=13899248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50086884A Granted JPS5210673A (en) 1975-07-15 1975-07-15 Manufacturing method of silicon semi-conductor device

Country Status (1)

Country Link
JP (1) JPS5210673A (ref)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648133A (en) * 1979-09-26 1981-05-01 Nec Corp Manufacture of semiconductor device
JPH088224B2 (ja) * 1985-06-12 1996-01-29 ヒュンダイ エレクトロニクス アメリカ 集積回路のコンタクト及び内部接続線の形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918578A (ref) * 1972-06-14 1974-02-19
JPS4964369A (ref) * 1972-10-23 1974-06-21
JPS50113169A (ref) * 1973-10-29 1975-09-05

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918578A (ref) * 1972-06-14 1974-02-19
JPS4964369A (ref) * 1972-10-23 1974-06-21
JPS50113169A (ref) * 1973-10-29 1975-09-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648133A (en) * 1979-09-26 1981-05-01 Nec Corp Manufacture of semiconductor device
JPH088224B2 (ja) * 1985-06-12 1996-01-29 ヒュンダイ エレクトロニクス アメリカ 集積回路のコンタクト及び内部接続線の形成方法

Also Published As

Publication number Publication date
JPS5718702B2 (ref) 1982-04-17

Similar Documents

Publication Publication Date Title
JPS5210673A (en) Manufacturing method of silicon semi-conductor device
JPS5253666A (en) Method of preventing impurity diffusion from doped oxide
JPS51116675A (en) Manufacturing method for a semiconductor device
JPS52154367A (en) Production of semiconductor device
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS5230392A (en) Electrode and it's manufacturing process
JPS5271974A (en) Production of semiconductor device
JPS5244169A (en) Process for production of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5228879A (en) Semiconductor device and method for its production
JPS51113461A (en) A method for manufacturing semiconductor devices
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS57132357A (en) Manufacture of semiconductor element
JPS54116884A (en) Semiconductor device
JPS51135366A (en) Method of forming electrode film on silicon semiconductor device
JPS5632755A (en) Semiconductor device
JPS5272162A (en) Production of semiconductor device
JPS5244163A (en) Process for productin of semiconductor element
JPS6459858A (en) Manufacture of semiconductor device
JPS5272186A (en) Production of mis type semiconductor device
JPS5372482A (en) Manufacture for semiconductor device
JPS5390784A (en) Production of semiconductor device
JPS5754366A (en) Manufacture of semiconductor device
JPS53101977A (en) Diffusion method of inpurity to semiconductor substrate
JPS54586A (en) Production of semiconductor device