JPS51141741A - Method of selectively removing aluminum - Google Patents

Method of selectively removing aluminum

Info

Publication number
JPS51141741A
JPS51141741A JP51048711A JP4871176A JPS51141741A JP S51141741 A JPS51141741 A JP S51141741A JP 51048711 A JP51048711 A JP 51048711A JP 4871176 A JP4871176 A JP 4871176A JP S51141741 A JPS51141741 A JP S51141741A
Authority
JP
Japan
Prior art keywords
selectively removing
removing aluminum
aluminum
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51048711A
Other languages
English (en)
Other versions
JPS5514143B2 (ja
Inventor
Emu Haaburuchiyatsuku Jiyosefu
Esu Roogan Jiyosefu
Shii Metsugaa Uiriamu
Emu Shiyaiburu Pooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS51141741A publication Critical patent/JPS51141741A/ja
Publication of JPS5514143B2 publication Critical patent/JPS5514143B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP51048711A 1975-05-22 1976-04-30 Method of selectively removing aluminum Granted JPS51141741A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/580,102 US3994793A (en) 1975-05-22 1975-05-22 Reactive ion etching of aluminum

Publications (2)

Publication Number Publication Date
JPS51141741A true JPS51141741A (en) 1976-12-06
JPS5514143B2 JPS5514143B2 (ja) 1980-04-14

Family

ID=24319707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51048711A Granted JPS51141741A (en) 1975-05-22 1976-04-30 Method of selectively removing aluminum

Country Status (3)

Country Link
US (1) US3994793A (ja)
JP (1) JPS51141741A (ja)
GB (1) GB1485928A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469090A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5469091A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS54109387A (en) * 1978-02-15 1979-08-27 Hitachi Ltd Etching method
JPS5518399A (en) * 1978-07-27 1980-02-08 Eaton Corp Plasma etching method of aluminium article
JPS566453A (en) * 1979-06-28 1981-01-23 Matsushita Electronics Corp Formation of metal pattern for semiconductor substrate
JPS5629328A (en) * 1979-08-17 1981-03-24 Toshiba Corp Plasma etching method
JPH03241830A (ja) * 1990-02-20 1991-10-29 Mitsubishi Electric Corp プラズマエッチングの方法

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IT1203089B (it) * 1976-03-03 1989-02-15 Int Plasma Corp Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma
FR2376904A1 (fr) * 1977-01-11 1978-08-04 Alsthom Atlantique Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma
JPS541245A (en) * 1977-06-06 1979-01-08 Hitachi Ltd Method of etching a1 and a1-based alloy
US4172004A (en) * 1977-10-20 1979-10-23 International Business Machines Corporation Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
US4289834A (en) * 1977-10-20 1981-09-15 Ibm Corporation Dense dry etched multi-level metallurgy with non-overlapped vias
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
US4203800A (en) * 1977-12-30 1980-05-20 International Business Machines Corporation Reactive ion etching process for metals
GB1595659A (en) * 1978-05-25 1981-08-12 Standard Telephones Cables Ltd Providing conductive tracks on semiconductor devices
JPS556407A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Etching method for aluminum
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4184909A (en) * 1978-08-21 1980-01-22 International Business Machines Corporation Method of forming thin film interconnection systems
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4340276A (en) 1978-11-01 1982-07-20 Minnesota Mining And Manufacturing Company Method of producing a microstructured surface and the article produced thereby
US4229247A (en) * 1978-12-26 1980-10-21 International Business Machines Corporation Glow discharge etching process for chromium
US4410622A (en) * 1978-12-29 1983-10-18 International Business Machines Corporation Forming interconnections for multilevel interconnection metallurgy systems
JPS55107780A (en) * 1979-02-07 1980-08-19 Hitachi Ltd Etching method
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials
DE3071299D1 (en) * 1979-07-31 1986-01-30 Fujitsu Ltd Dry etching of metal film
DE3030814C2 (de) * 1979-08-17 1983-06-16 Tokuda Seisakusyo, Ltd., Zama, Kanagawa Verfahren zum Plasmaätzen eines Werkstücks
JPS5813625B2 (ja) * 1979-12-12 1983-03-15 超エル・エス・アイ技術研究組合 ガスプラズマ食刻法
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
JPS57204186A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Electrode processing method for magnetic reluctance element
US4387013A (en) * 1981-08-24 1983-06-07 Rca Corporation Reactive sputter etching of aluminum
GB8319716D0 (en) * 1983-07-21 1983-08-24 Secr Defence Reactive ion etching
US4564585A (en) * 1983-11-28 1986-01-14 Magnetic Peripherals, Inc. Process for fabricating negative pressure sliders
GB2150317A (en) * 1983-11-28 1985-06-26 Magnetic Peripherals Inc Process for producing negative pressure sliders using a photoresist
GB2159753B (en) * 1984-03-06 1988-09-07 Asm Fico Tooling Method and apparatus for cleaning lead pins before soldering operations
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
US5354416A (en) * 1986-09-05 1994-10-11 Sadayuki Okudaira Dry etching method
EP0565212A2 (en) * 1986-12-19 1993-10-13 Applied Materials, Inc. Iodine etch process for silicon and silicides
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
US5106471A (en) * 1990-04-02 1992-04-21 Motorola, Inc. Reactive ion etch process for surface acoustic wave (SAW) device fabrication
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
JPH04329640A (ja) * 1991-05-01 1992-11-18 Mitsubishi Electric Corp 配線層のドライエッチング方法
US5126008A (en) * 1991-05-03 1992-06-30 Applied Materials, Inc. Corrosion-free aluminum etching process for fabricating an integrated circuit structure
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
JPH08130206A (ja) * 1994-10-31 1996-05-21 Sony Corp Ａｌ系金属層のプラズマエッチング方法
US5843289A (en) 1996-01-22 1998-12-01 Etex Corporation Surface modification of medical implants
EP0785572A2 (en) * 1996-01-22 1997-07-23 Matsushita Electric Industrial Co., Ltd. Dry etching method for aluminium alloy and etching gas therefor
US6033582A (en) 1996-01-22 2000-03-07 Etex Corporation Surface modification of medical implants
US6090717A (en) * 1996-03-26 2000-07-18 Lam Research Corporation High density plasma etching of metallization layer using chlorine and nitrogen
US5976986A (en) * 1996-08-06 1999-11-02 International Business Machines Corp. Low pressure and low power C12 /HC1 process for sub-micron metal etching
JP3269411B2 (ja) * 1996-12-04 2002-03-25 ヤマハ株式会社 半導体装置の製造方法
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
EP1444727A4 (en) * 2001-10-22 2007-07-18 Unaxis Usa Inc PROCESS AND DEVICE FOR CORROSING THIN, DAMAGE-SENSITIVE LAYERS USING HIGH FREQUENCY PULSE PLASMA
KR100640211B1 (ko) * 2003-04-03 2006-10-31 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US20090136785A1 (en) * 2007-01-03 2009-05-28 Nanosys, Inc. Methods for nanopatterning and production of magnetic nanostructures
WO2008085813A2 (en) * 2007-01-03 2008-07-17 Nanosys, Inc, Et Al. Methods for nanopatterning and production of nanostructures
KR20110074724A (ko) * 2007-12-14 2011-07-01 나노시스, 인크. 기판 요소들의 형성 방법
US8540889B1 (en) 2008-11-19 2013-09-24 Nanosys, Inc. Methods of generating liquidphobic surfaces
JP2011029247A (ja) * 2009-07-22 2011-02-10 Panasonic Corp 窒化物半導体装置及びその製造方法
US9001463B2 (en) 2012-08-31 2015-04-07 International Business Machines Corporaton Magnetic recording head having protected reader sensors and near zero recessed write poles
US9349395B2 (en) * 2012-08-31 2016-05-24 International Business Machines Corporation System and method for differential etching

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943844A (ja) * 1972-09-01 1974-04-25
JPS4975270A (ja) * 1972-11-22 1974-07-19

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US3477936A (en) * 1967-06-29 1969-11-11 Ppg Industries Inc Sputtering of metals in an atmosphere of fluorine and oxygen
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3654108A (en) * 1969-09-23 1972-04-04 Air Reduction Method for glow cleaning
US3676317A (en) * 1970-10-23 1972-07-11 Stromberg Datagraphix Inc Sputter etching process
FR2128140B1 (ja) * 1971-03-05 1976-04-16 Alsthom Cgee
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
US3795557A (en) * 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US3951709A (en) * 1974-02-28 1976-04-20 Lfe Corporation Process and material for semiconductor photomask fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943844A (ja) * 1972-09-01 1974-04-25
JPS4975270A (ja) * 1972-11-22 1974-07-19

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469090A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5469091A (en) * 1977-11-11 1979-06-02 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS54109387A (en) * 1978-02-15 1979-08-27 Hitachi Ltd Etching method
JPS6255692B2 (ja) * 1978-02-15 1987-11-20 Hitachi Ltd
JPS5518399A (en) * 1978-07-27 1980-02-08 Eaton Corp Plasma etching method of aluminium article
JPS5937572B2 (ja) * 1978-07-27 1984-09-11 イ−トン・コ−ポレ−シヨン アルミニウム物品のプラズマ食刻法
JPS566453A (en) * 1979-06-28 1981-01-23 Matsushita Electronics Corp Formation of metal pattern for semiconductor substrate
JPS6210024B2 (ja) * 1979-06-28 1987-03-04 Matsushita Electronics Corp
JPS5629328A (en) * 1979-08-17 1981-03-24 Toshiba Corp Plasma etching method
JPH03241830A (ja) * 1990-02-20 1991-10-29 Mitsubishi Electric Corp プラズマエッチングの方法

Also Published As

Publication number Publication date
GB1485928A (en) 1977-09-14
JPS5514143B2 (ja) 1980-04-14
US3994793A (en) 1976-11-30

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