JPS566453A - Formation of metal pattern for semiconductor substrate - Google Patents

Formation of metal pattern for semiconductor substrate

Info

Publication number
JPS566453A
JPS566453A JP8169779A JP8169779A JPS566453A JP S566453 A JPS566453 A JP S566453A JP 8169779 A JP8169779 A JP 8169779A JP 8169779 A JP8169779 A JP 8169779A JP S566453 A JPS566453 A JP S566453A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
formation
metal
side etching
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8169779A
Other languages
Japanese (ja)
Other versions
JPS6210024B2 (en
Inventor
Kenji Mitsui
Toru Okuma
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP8169779A priority Critical patent/JPS566453A/en
Publication of JPS566453A publication Critical patent/JPS566453A/en
Publication of JPS6210024B2 publication Critical patent/JPS6210024B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a fine electrode with limited side etching by dry etching with a halogen affiliated gas the metal layer comprising the first metal and the second metal smaller in the vapor pressure of the halogenide formed on the semiconductor substrate. CONSTITUTION:An Al alloy film containing Si and Cu, for instance, is formed on the semiconductor substrate made of Si or the like on which specified regions such as MOSLSI and a photoresist pattern are formed. A plasma etching is made in the mixed gas of tetrachlorinated carbon and herium in the reaction chamber equipped with a parallel flat electrode, for instance, to form an electrode pattern. The addition of Si makes the side etching larger in the tendency while that of Cu makes it smaller. Therefore, the addition of both substances is adjusted to obtain a proper side etching level. This enables the formation of the fine electrode pattern at a high accuracy.
JP8169779A 1979-06-28 1979-06-28 Formation of metal pattern for semiconductor substrate Granted JPS566453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8169779A JPS566453A (en) 1979-06-28 1979-06-28 Formation of metal pattern for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8169779A JPS566453A (en) 1979-06-28 1979-06-28 Formation of metal pattern for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS566453A true JPS566453A (en) 1981-01-23
JPS6210024B2 JPS6210024B2 (en) 1987-03-04

Family

ID=13753557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8169779A Granted JPS566453A (en) 1979-06-28 1979-06-28 Formation of metal pattern for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS566453A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum

Also Published As

Publication number Publication date
JPS6210024B2 (en) 1987-03-04

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