JPS54109387A - Etching method - Google Patents

Etching method

Info

Publication number
JPS54109387A
JPS54109387A JP1539678A JP1539678A JPS54109387A JP S54109387 A JPS54109387 A JP S54109387A JP 1539678 A JP1539678 A JP 1539678A JP 1539678 A JP1539678 A JP 1539678A JP S54109387 A JPS54109387 A JP S54109387A
Authority
JP
Japan
Prior art keywords
chlorine
gas
etching
chamber
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1539678A
Other languages
Japanese (ja)
Other versions
JPS6255692B2 (en
Inventor
Tatsumi Mizutani
Hideo Komatsu
Shinya Iida
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1539678A priority Critical patent/JPS54109387A/en
Publication of JPS54109387A publication Critical patent/JPS54109387A/en
Publication of JPS6255692B2 publication Critical patent/JPS6255692B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To make etching speed to desired speed, by using boron trichloride or carbon tetrachloride including 0.1 to 10 vol.% either of chlorine or hydrogen chloride as introduced gas, in forming the Al fine wiring of IC with the plasma etching in the vacuum chamber.
CONSTITUTION: The test piece 20 is mounted on the high frequency electrode 2 or opposing electrode 3 in the vacuum chamber 1, and the chamber 1 is vented with the vacuum pumps 5 to 7. Further, the valve 8 is closed, interrupting the connection with the pumps and the mixing gas of boron trichloride or carbon tetrachloride gas and chlorine is fed to the chamber 1, and it is discharged from the liquid nitrogen traps 10 and 11 incorporating heaters 18 and 19. In this case, the amount of chlorine and hydrogen chrolide mixed is specified to 0.1 to 10 vol. % of the main gas. Further, high frequency voltage is fed from the power supply 21 to the electrode 2, producing glow discharge plasma and etching Al on the test piece 20. Thus, the control of etching speed is made easy while performing under-cut.
COPYRIGHT: (C)1979,JPO&Japio
JP1539678A 1978-02-15 1978-02-15 Etching method Granted JPS54109387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1539678A JPS54109387A (en) 1978-02-15 1978-02-15 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1539678A JPS54109387A (en) 1978-02-15 1978-02-15 Etching method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP19051786A Division JPS6254441A (en) 1986-08-15 1986-08-15 Etching device

Publications (2)

Publication Number Publication Date
JPS54109387A true JPS54109387A (en) 1979-08-27
JPS6255692B2 JPS6255692B2 (en) 1987-11-20

Family

ID=11887562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1539678A Granted JPS54109387A (en) 1978-02-15 1978-02-15 Etching method

Country Status (1)

Country Link
JP (1) JPS54109387A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57500399A (en) * 1980-04-07 1982-03-04
EP0076860A1 (en) * 1981-04-15 1983-04-20 Hitachi, Ltd. Process for dry-etching an aluminum alloy
EP0099558A2 (en) * 1982-07-22 1984-02-01 Texas Instruments Incorporated Fast plasma etch for aluminum
JPS59134833A (en) * 1982-11-03 1984-08-02 アプライド・マテリアルズ・インコ−ポレ−テツド Material and method for plasma etching aluminum and aluminumalloy

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50122878A (en) * 1974-03-14 1975-09-26
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum
JPS53124979A (en) * 1977-04-07 1978-10-31 Fujitsu Ltd Plasma etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50122878A (en) * 1974-03-14 1975-09-26
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum
JPS53124979A (en) * 1977-04-07 1978-10-31 Fujitsu Ltd Plasma etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57500399A (en) * 1980-04-07 1982-03-04
EP0076860A1 (en) * 1981-04-15 1983-04-20 Hitachi, Ltd. Process for dry-etching an aluminum alloy
EP0099558A2 (en) * 1982-07-22 1984-02-01 Texas Instruments Incorporated Fast plasma etch for aluminum
JPS59134833A (en) * 1982-11-03 1984-08-02 アプライド・マテリアルズ・インコ−ポレ−テツド Material and method for plasma etching aluminum and aluminumalloy

Also Published As

Publication number Publication date
JPS6255692B2 (en) 1987-11-20

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