JPS54109387A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS54109387A JPS54109387A JP1539678A JP1539678A JPS54109387A JP S54109387 A JPS54109387 A JP S54109387A JP 1539678 A JP1539678 A JP 1539678A JP 1539678 A JP1539678 A JP 1539678A JP S54109387 A JPS54109387 A JP S54109387A
- Authority
- JP
- Japan
- Prior art keywords
- chlorine
- gas
- etching
- chamber
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To make etching speed to desired speed, by using boron trichloride or carbon tetrachloride including 0.1 to 10 vol.% either of chlorine or hydrogen chloride as introduced gas, in forming the Al fine wiring of IC with the plasma etching in the vacuum chamber.
CONSTITUTION: The test piece 20 is mounted on the high frequency electrode 2 or opposing electrode 3 in the vacuum chamber 1, and the chamber 1 is vented with the vacuum pumps 5 to 7. Further, the valve 8 is closed, interrupting the connection with the pumps and the mixing gas of boron trichloride or carbon tetrachloride gas and chlorine is fed to the chamber 1, and it is discharged from the liquid nitrogen traps 10 and 11 incorporating heaters 18 and 19. In this case, the amount of chlorine and hydrogen chrolide mixed is specified to 0.1 to 10 vol. % of the main gas. Further, high frequency voltage is fed from the power supply 21 to the electrode 2, producing glow discharge plasma and etching Al on the test piece 20. Thus, the control of etching speed is made easy while performing under-cut.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1539678A JPS54109387A (en) | 1978-02-15 | 1978-02-15 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1539678A JPS54109387A (en) | 1978-02-15 | 1978-02-15 | Etching method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19051786A Division JPS6254441A (en) | 1986-08-15 | 1986-08-15 | Etching device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54109387A true JPS54109387A (en) | 1979-08-27 |
JPS6255692B2 JPS6255692B2 (en) | 1987-11-20 |
Family
ID=11887562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1539678A Granted JPS54109387A (en) | 1978-02-15 | 1978-02-15 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54109387A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57500399A (en) * | 1980-04-07 | 1982-03-04 | ||
EP0076860A1 (en) * | 1981-04-15 | 1983-04-20 | Hitachi, Ltd. | Process for dry-etching an aluminum alloy |
EP0099558A2 (en) * | 1982-07-22 | 1984-02-01 | Texas Instruments Incorporated | Fast plasma etch for aluminum |
JPS59134833A (en) * | 1982-11-03 | 1984-08-02 | アプライド・マテリアルズ・インコ−ポレ−テツド | Material and method for plasma etching aluminum and aluminumalloy |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50122878A (en) * | 1974-03-14 | 1975-09-26 | ||
JPS51141741A (en) * | 1975-05-22 | 1976-12-06 | Ibm | Method of selectively removing aluminum |
JPS53124979A (en) * | 1977-04-07 | 1978-10-31 | Fujitsu Ltd | Plasma etching method |
-
1978
- 1978-02-15 JP JP1539678A patent/JPS54109387A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50122878A (en) * | 1974-03-14 | 1975-09-26 | ||
JPS51141741A (en) * | 1975-05-22 | 1976-12-06 | Ibm | Method of selectively removing aluminum |
JPS53124979A (en) * | 1977-04-07 | 1978-10-31 | Fujitsu Ltd | Plasma etching method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57500399A (en) * | 1980-04-07 | 1982-03-04 | ||
EP0076860A1 (en) * | 1981-04-15 | 1983-04-20 | Hitachi, Ltd. | Process for dry-etching an aluminum alloy |
EP0099558A2 (en) * | 1982-07-22 | 1984-02-01 | Texas Instruments Incorporated | Fast plasma etch for aluminum |
JPS59134833A (en) * | 1982-11-03 | 1984-08-02 | アプライド・マテリアルズ・インコ−ポレ−テツド | Material and method for plasma etching aluminum and aluminumalloy |
Also Published As
Publication number | Publication date |
---|---|
JPS6255692B2 (en) | 1987-11-20 |
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