JPS5541918A - Suppying method of mixed reaction gas for etching - Google Patents

Suppying method of mixed reaction gas for etching

Info

Publication number
JPS5541918A
JPS5541918A JP11330878A JP11330878A JPS5541918A JP S5541918 A JPS5541918 A JP S5541918A JP 11330878 A JP11330878 A JP 11330878A JP 11330878 A JP11330878 A JP 11330878A JP S5541918 A JPS5541918 A JP S5541918A
Authority
JP
Japan
Prior art keywords
gas
mixture
heated
liquid
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11330878A
Other languages
Japanese (ja)
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11330878A priority Critical patent/JPS5541918A/en
Publication of JPS5541918A publication Critical patent/JPS5541918A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form electrode wiring patterns of high quality at high efficiency, by mixing at least one kind of liquid mixture gases, PCl3, CCl4, BBr3, to liquid reaction gas BCl3, heating the mixture to specified temperature, and generating and supplying gas mixture gas of specified ratio.
CONSTITUTION: A liquid reaction gas BCl3, and at least one kind of liquid mixture gases, PCl3, CCl4, BBr3, are preliminarily mixed in a container 44, and this liquid mixture gas is heated to a specified temperature in an oil bath 45. By generating gas mixture gas of the mixing ratio proportional to the vapor pressure of each component at such temperature, this mixture gas is adjusted of the flow rate by means of a needle valve 41 and a flow meter 42, and, not changing the composition of this mixture gas, is supplied to a vacuum sputtering chamber 34 through a heated supply tube 39 which is heated to the same temperature as the bath 45. Sputtering is performed between upper and lower electrodes 36, 35 while adjusting the gas pressure in the chamber 34 by means of a vacuum exhaust valve 38, and Al or Al alloy film on a substrate 37 is etched.
COPYRIGHT: (C)1980,JPO&Japio
JP11330878A 1978-09-14 1978-09-14 Suppying method of mixed reaction gas for etching Pending JPS5541918A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11330878A JPS5541918A (en) 1978-09-14 1978-09-14 Suppying method of mixed reaction gas for etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11330878A JPS5541918A (en) 1978-09-14 1978-09-14 Suppying method of mixed reaction gas for etching

Publications (1)

Publication Number Publication Date
JPS5541918A true JPS5541918A (en) 1980-03-25

Family

ID=14608934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11330878A Pending JPS5541918A (en) 1978-09-14 1978-09-14 Suppying method of mixed reaction gas for etching

Country Status (1)

Country Link
JP (1) JPS5541918A (en)

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