IT1203089B - Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma - Google Patents

Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma

Info

Publication number
IT1203089B
IT1203089B IT20865/77A IT2086577A IT1203089B IT 1203089 B IT1203089 B IT 1203089B IT 20865/77 A IT20865/77 A IT 20865/77A IT 2086577 A IT2086577 A IT 2086577A IT 1203089 B IT1203089 B IT 1203089B
Authority
IT
Italy
Prior art keywords
plasma
procedure
region
equipment
chemical reactions
Prior art date
Application number
IT20865/77A
Other languages
English (en)
Original Assignee
Int Plasma Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Plasma Corp filed Critical Int Plasma Corp
Application granted granted Critical
Publication of IT1203089B publication Critical patent/IT1203089B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
IT20865/77A 1976-03-03 1977-03-03 Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma IT1203089B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66327176A 1976-03-03 1976-03-03

Publications (1)

Publication Number Publication Date
IT1203089B true IT1203089B (it) 1989-02-15

Family

ID=24661124

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20865/77A IT1203089B (it) 1976-03-03 1977-03-03 Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma

Country Status (2)

Country Link
US (1) US4148705A (it)
IT (1) IT1203089B (it)

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US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US4230515A (en) * 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
US4307283A (en) * 1979-09-27 1981-12-22 Eaton Corporation Plasma etching apparatus II-conical-shaped projection
GB2069008B (en) * 1980-01-16 1984-09-12 Secr Defence Coating in a glow discharge
US4328081A (en) * 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US4278493A (en) * 1980-04-28 1981-07-14 International Business Machines Corporation Method for cleaning surfaces by ion milling
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4483478A (en) * 1981-09-11 1984-11-20 Rockwell International Corporation Method for fabricating superplastically formed/diffusion bonded aluminum or aluminum alloy structures
US4372806A (en) * 1981-12-30 1983-02-08 Rca Corporation Plasma etching technique
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
US4375385A (en) * 1982-03-25 1983-03-01 Rca Corporation Plasma etching of aluminum
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
JP3170791B2 (ja) * 1990-09-11 2001-05-28 ソニー株式会社 Ａｌ系材料膜のエッチング方法
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5558843A (en) * 1994-09-01 1996-09-24 Eastman Kodak Company Near atmospheric pressure treatment of polymers using helium discharges
US5698168A (en) * 1995-11-01 1997-12-16 Chorus Corporation Unibody gas plasma source technology
US6900592B2 (en) * 1997-03-18 2005-05-31 The Trustees Of The Stevens Institute Of Technology Method and apparatus for stabilizing of the glow plasma discharges
US6147452A (en) * 1997-03-18 2000-11-14 The Trustees Of The Stevens Institute Of Technology AC glow plasma discharge device having an electrode covered with apertured dielectric
US5994235A (en) * 1998-06-24 1999-11-30 Lam Research Corporation Methods for etching an aluminum-containing layer
EP1193746B1 (en) * 1999-05-06 2009-12-09 Tokyo Electron Limited Apparatus for plasma processing
US20050061445A1 (en) * 1999-05-06 2005-03-24 Tokyo Electron Limited Plasma processing apparatus
JP4454781B2 (ja) * 2000-04-18 2010-04-21 東京エレクトロン株式会社 プラズマ処理装置
US6576202B1 (en) * 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
AU2001273537A1 (en) * 2000-07-20 2002-02-05 Tokyo Electron Limited Improved electrode for plasma processing system
US20030106644A1 (en) * 2001-07-19 2003-06-12 Sirkis Murray D. Electrode apparatus and method for plasma processing
JP4220817B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
JPWO2006008889A1 (ja) * 2004-07-20 2008-05-01 シャープ株式会社 プラズマ処理装置
EP1959480A4 (en) * 2005-11-25 2010-04-21 Sharp Kk PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
WO2015108184A1 (ja) * 2014-01-20 2015-07-23 ウシオ電機株式会社 デスミア処理装置
US10714319B2 (en) * 2018-02-21 2020-07-14 Applied Materials, Inc. Apparatus and methods for removing contaminant particles in a plasma process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816198A (en) * 1969-09-22 1974-06-11 G Babcock Selective plasma etching of organic materials employing photolithographic techniques
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum

Also Published As

Publication number Publication date
US4148705A (en) 1979-04-10

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