JPH1174354A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JPH1174354A
JPH1174354A JP10177267A JP17726798A JPH1174354A JP H1174354 A JPH1174354 A JP H1174354A JP 10177267 A JP10177267 A JP 10177267A JP 17726798 A JP17726798 A JP 17726798A JP H1174354 A JPH1174354 A JP H1174354A
Authority
JP
Japan
Prior art keywords
film
forming
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10177267A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174354A5 (https=
Inventor
Takeshi Tamaru
剛 田丸
Yoshitaka Nakamura
吉孝 中村
Hidekazu Goshima
秀和 五嶋
Isamu Asano
勇 浅野
Katsuhiko Tanaka
克彦 田中
Naoki Fukuda
直樹 福田
Hideo Aoki
英雄 青木
Hiroshi Sakuma
浩 佐久間
Keizo Kawakita
惠三 川北
Satoru Yamada
悟 山田
Masanari Hirasawa
賢斉 平沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10177267A priority Critical patent/JPH1174354A/ja
Publication of JPH1174354A publication Critical patent/JPH1174354A/ja
Publication of JPH1174354A5 publication Critical patent/JPH1174354A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP10177267A 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法 Pending JPH1174354A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10177267A JPH1174354A (ja) 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-174150 1997-06-30
JP17415097 1997-06-30
JP10177267A JPH1174354A (ja) 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1174354A true JPH1174354A (ja) 1999-03-16
JPH1174354A5 JPH1174354A5 (https=) 2005-02-03

Family

ID=26495851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10177267A Pending JPH1174354A (ja) 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPH1174354A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298028A (ja) * 2000-04-17 2001-10-26 Tokyo Electron Ltd 半導体デバイス製造方法
JP2006253634A (ja) * 2005-02-14 2006-09-21 Tokyo Electron Ltd 基板の処理方法、電子デバイスの製造方法及びプログラム
US7625795B2 (en) 1999-09-02 2009-12-01 Micron Technology, Inc. Container capacitor structure and method of formation thereof
JP2012033962A (ja) * 2011-10-28 2012-02-16 Tokyo Electron Ltd 半導体デバイス製造方法
JP2012509576A (ja) * 2008-11-19 2012-04-19 マイクロン テクノロジー， インク． 導電物質を形成する方法、導電物質を選択的に形成する方法、プラチナを形成する方法、及び、導電構造を形成する方法
CN113380758A (zh) * 2020-02-25 2021-09-10 铠侠股份有限公司 半导体装置及其制造方法
CN114730735A (zh) * 2019-11-21 2022-07-08 应用材料公司 平滑化动态随机存取存储器位线金属的方法与设备

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7625795B2 (en) 1999-09-02 2009-12-01 Micron Technology, Inc. Container capacitor structure and method of formation thereof
JP2001298028A (ja) * 2000-04-17 2001-10-26 Tokyo Electron Ltd 半導体デバイス製造方法
JP2006253634A (ja) * 2005-02-14 2006-09-21 Tokyo Electron Ltd 基板の処理方法、電子デバイスの製造方法及びプログラム
US9023711B2 (en) 2008-11-19 2015-05-05 Micron Technology, Inc. Methods for forming a conductive material and methods for forming a conductive structure
JP2012509576A (ja) * 2008-11-19 2012-04-19 マイクロン テクノロジー， インク． 導電物質を形成する方法、導電物質を選択的に形成する方法、プラチナを形成する方法、及び、導電構造を形成する方法
US8753933B2 (en) 2008-11-19 2014-06-17 Micron Technology, Inc. Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures
JP2012033962A (ja) * 2011-10-28 2012-02-16 Tokyo Electron Ltd 半導体デバイス製造方法
CN114730735A (zh) * 2019-11-21 2022-07-08 应用材料公司 平滑化动态随机存取存储器位线金属的方法与设备
JP2023502095A (ja) * 2019-11-21 2023-01-20 アプライド マテリアルズ インコーポレイテッド ダイナミックランダムアクセスメモリのビットラインメタルを平滑化する方法及び装置
TWI891673B (zh) * 2019-11-21 2025-08-01 美商應用材料股份有限公司 平滑化動態隨機存取記憶體位元線金屬的方法與設備
CN113380758A (zh) * 2020-02-25 2021-09-10 铠侠股份有限公司 半导体装置及其制造方法
CN113380758B (zh) * 2020-02-25 2023-12-29 铠侠股份有限公司 半导体装置及其制造方法
US12205887B2 (en) 2020-02-25 2025-01-21 Kioxia Corporation Semiconductor device and method for manufacturing the semiconductor device preliminary class

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