JPH11510307A - 電界電子放出材料および装置 - Google Patents
電界電子放出材料および装置Info
- Publication number
- JPH11510307A JPH11510307A JP9508212A JP50821297A JPH11510307A JP H11510307 A JPH11510307 A JP H11510307A JP 9508212 A JP9508212 A JP 9508212A JP 50821297 A JP50821297 A JP 50821297A JP H11510307 A JPH11510307 A JP H11510307A
- Authority
- JP
- Japan
- Prior art keywords
- field
- electron emission
- field electron
- particles
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000463 material Substances 0.000 title claims abstract description 174
- 239000002245 particle Substances 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000011521 glass Substances 0.000 claims abstract description 28
- 239000011810 insulating material Substances 0.000 claims abstract description 25
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 22
- 230000005684 electric field Effects 0.000 claims abstract description 21
- 238000007639 printing Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 58
- 239000010432 diamond Substances 0.000 claims description 30
- 229910003460 diamond Inorganic materials 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 28
- 125000006850 spacer group Chemical group 0.000 claims description 27
- 239000000835 fiber Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000005247 gettering Methods 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 239000002241 glass-ceramic Substances 0.000 claims description 9
- 238000005219 brazing Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910026551 ZrC Inorganic materials 0.000 claims description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims description 2
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 claims description 2
- 239000006060 molten glass Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 102100026827 Protein associated with UVRAG as autophagy enhancer Human genes 0.000 claims 1
- 101710102978 Protein associated with UVRAG as autophagy enhancer Proteins 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 1
- 239000011224 oxide ceramic Substances 0.000 claims 1
- 229910052574 oxide ceramic Inorganic materials 0.000 claims 1
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- -1 carbide Chemical compound 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 239000005355 lead glass Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012772 electrical insulation material Substances 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000766352 Maize Iranian mosaic nucleorhabdovirus Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000009503 electrostatic coating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000001275 scanning Auger electron spectroscopy Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electroluminescent Light Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9515988.5A GB9515988D0 (en) | 1995-08-04 | 1995-08-04 | Field electron emission materials and devices |
| GB9515988.5 | 1995-08-04 | ||
| GB9606816.8 | 1996-03-30 | ||
| GBGB9606816.8A GB9606816D0 (en) | 1996-03-30 | 1996-03-30 | Field electron emission materials and devices |
| PCT/GB1996/001858 WO1997006549A1 (en) | 1995-08-04 | 1996-08-02 | Field electron emission materials and devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11510307A true JPH11510307A (ja) | 1999-09-07 |
| JPH11510307A5 JPH11510307A5 (enExample) | 2004-08-26 |
Family
ID=26307517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9508212A Ceased JPH11510307A (ja) | 1995-08-04 | 1996-08-02 | 電界電子放出材料および装置 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6097139A (enExample) |
| EP (1) | EP0842526B1 (enExample) |
| JP (1) | JPH11510307A (enExample) |
| KR (1) | KR100405886B1 (enExample) |
| CN (1) | CN1103110C (enExample) |
| AU (1) | AU6626096A (enExample) |
| CA (1) | CA2227322A1 (enExample) |
| DE (1) | DE69607356T2 (enExample) |
| ES (1) | ES2146890T3 (enExample) |
| GB (1) | GB2304989B (enExample) |
| WO (1) | WO1997006549A1 (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007116524A1 (ja) | 2006-04-11 | 2007-10-18 | Norio Akamatsu | 電界放出発電装置 |
| WO2007122709A1 (ja) | 2006-04-20 | 2007-11-01 | Norio Akamatsu | 線形加速発電装置 |
| WO2007135717A1 (ja) | 2006-05-19 | 2007-11-29 | Norio Akamatsu | 電界放出発電装置 |
| US7583016B2 (en) | 2004-12-10 | 2009-09-01 | Canon Kabushiki Kaisha | Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device |
| WO2009153981A1 (ja) | 2008-06-16 | 2009-12-23 | Akamatsu Norio | 電界効果発電装置 |
| US7682213B2 (en) | 2003-06-11 | 2010-03-23 | Canon Kabushiki Kaisha | Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen |
| US7811625B2 (en) | 2002-06-13 | 2010-10-12 | Canon Kabushiki Kaisha | Method for manufacturing electron-emitting device |
| JP2019029194A (ja) * | 2017-07-31 | 2019-02-21 | シャープ株式会社 | 電子放出素子 |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854822A (en) * | 1997-07-25 | 1998-12-29 | Xrt Corp. | Miniature x-ray device having cold cathode |
| AU8911898A (en) * | 1997-08-18 | 1999-03-08 | Xrt Corp. | Cathode from getter material |
| GB2330687B (en) * | 1997-10-22 | 1999-09-29 | Printable Field Emitters Ltd | Field emission devices |
| CN1206690C (zh) * | 1997-12-04 | 2005-06-15 | 可印刷发射体有限公司 | 形成场致电子发射材料的方法和场致电子发射装置 |
| WO1999031702A1 (en) | 1997-12-15 | 1999-06-24 | E.I. Du Pont De Nemours And Company | Ion bombarded graphite electron emitters |
| US6409567B1 (en) | 1997-12-15 | 2002-06-25 | E.I. Du Pont De Nemours And Company | Past-deposited carbon electron emitters |
| JPH11213866A (ja) * | 1998-01-22 | 1999-08-06 | Sony Corp | 電子放出装置及びその製造方法並びにこれを用いた表示装置 |
| EP1056110B1 (en) * | 1998-02-09 | 2009-12-16 | Panasonic Corporation | Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same |
| JP2000021568A (ja) * | 1998-06-30 | 2000-01-21 | Nippon Seiki Co Ltd | 有機エレクトロルミネセンスの駆動回路 |
| GB9816684D0 (en) * | 1998-07-31 | 1998-09-30 | Printable Field Emitters Ltd | Field electron emission materials and devices |
| EP1032456A1 (en) * | 1998-08-21 | 2000-09-06 | Medtronic Ave, Inc. | Cathode structure with getter material and diamond film, and methods of manufacture thereof |
| US6479939B1 (en) * | 1998-10-16 | 2002-11-12 | Si Diamond Technology, Inc. | Emitter material having a plurlarity of grains with interfaces in between |
| US6292927B1 (en) * | 1998-12-07 | 2001-09-18 | Artisan Components, Inc. | Reduction of process antenna effects in integrated circuits |
| KR100346540B1 (ko) * | 1999-03-22 | 2002-07-26 | 삼성에스디아이 주식회사 | 전계 방출 표시소자와 그의 제조방법 |
| US6289079B1 (en) | 1999-03-23 | 2001-09-11 | Medtronic Ave, Inc. | X-ray device and deposition process for manufacture |
| JP2000306492A (ja) * | 1999-04-21 | 2000-11-02 | Hitachi Powdered Metals Co Ltd | 電界放出型カソード、電子放出装置、および電子放出装置の製造方法 |
| US6464625B2 (en) | 1999-06-23 | 2002-10-15 | Robert A. Ganz | Therapeutic method and apparatus for debilitating or killing microorganisms within the body |
| GB9915633D0 (en) * | 1999-07-05 | 1999-09-01 | Printable Field Emitters Limit | Field electron emission materials and devices |
| DE19936863A1 (de) * | 1999-08-05 | 2001-02-15 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Herstellungsverfahren für eine Gasentladungslampe |
| US6342755B1 (en) * | 1999-08-11 | 2002-01-29 | Sony Corporation | Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles |
| GB9919737D0 (en) * | 1999-08-21 | 1999-10-20 | Printable Field Emitters Limit | Field emitters and devices |
| US6914372B1 (en) * | 1999-10-12 | 2005-07-05 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting element and electron source, field emission image display device, and fluorescent lamp utilizing the same and methods of fabricating the same |
| JP2001185019A (ja) | 1999-12-27 | 2001-07-06 | Hitachi Powdered Metals Co Ltd | 電界放出型カソード、電子放出装置、及び電子放出装置の製造方法 |
| US6307327B1 (en) * | 2000-01-26 | 2001-10-23 | Motorola, Inc. | Method for controlling spacer visibility |
| FR2804623B1 (fr) * | 2000-02-09 | 2002-05-03 | Univ Paris Curie | Procede de traitement d'une surface de diamant et surface de diamant correspondante |
| JP4312352B2 (ja) * | 2000-06-30 | 2009-08-12 | 隆 杉野 | 電子放出装置 |
| GB0015928D0 (en) * | 2000-06-30 | 2000-08-23 | Printable Field Emitters Limit | Field emitters |
| US7315115B1 (en) | 2000-10-27 | 2008-01-01 | Canon Kabushiki Kaisha | Light-emitting and electron-emitting devices having getter regions |
| GB0106358D0 (en) * | 2001-03-13 | 2001-05-02 | Printable Field Emitters Ltd | Field emission materials and devices |
| JP3833489B2 (ja) * | 2001-03-29 | 2006-10-11 | 株式会社東芝 | 冷陰極放電装置 |
| KR100416141B1 (ko) * | 2001-06-22 | 2004-01-31 | 삼성에스디아이 주식회사 | 카본계 물질로 형성된 에미터를 갖는 전계 방출표시소자의 제조방법 |
| FR2836279B1 (fr) * | 2002-02-19 | 2004-09-24 | Commissariat Energie Atomique | Structure de cathode pour ecran emissif |
| GB2387021B (en) * | 2002-03-25 | 2004-10-27 | Printable Field Emitters Ltd | Field electron emission materials and devices |
| EP1552542A1 (en) * | 2002-10-07 | 2005-07-13 | Koninklijke Philips Electronics N.V. | Field emission device with self-aligned gate electrode structure, and method of manufacturing same |
| US7447298B2 (en) * | 2003-04-01 | 2008-11-04 | Cabot Microelectronics Corporation | Decontamination and sterilization system using large area x-ray source |
| TWI287940B (en) * | 2003-04-01 | 2007-10-01 | Cabot Microelectronics Corp | Electron source and method for making same |
| US6998009B2 (en) * | 2003-06-10 | 2006-02-14 | Ut-Battelle, Llc | Filter and method of fabricating |
| US7070634B1 (en) * | 2003-11-03 | 2006-07-04 | Wang Chi S | Plasma reformer for hydrogen production from water and fuel |
| US20050255613A1 (en) * | 2004-05-13 | 2005-11-17 | Dojin Kim | Manufacturing of field emission display device using carbon nanotubes |
| JP2006278318A (ja) * | 2005-03-25 | 2006-10-12 | Ngk Insulators Ltd | 光源 |
| DE112006002464T5 (de) | 2005-09-14 | 2008-07-24 | Littelfuse, Inc., Des Plaines | Gasgefüllter Überspannungsableiter, aktivierende Verbindung, Zündstreifen und Herstellungsverfahren dafür |
| JP2008078081A (ja) * | 2006-09-25 | 2008-04-03 | Toshiba Corp | 電界放出電子源及びその製造方法 |
| TWI384899B (zh) * | 2006-12-20 | 2013-02-01 | Teco Elec & Machinery Co Ltd | Field structure of the field emission type display element |
| US7827779B1 (en) | 2007-09-10 | 2010-11-09 | Alameda Applied Sciences Corp. | Liquid metal ion thruster array |
| JP2009146639A (ja) * | 2007-12-12 | 2009-07-02 | Canon Inc | 電子放出素子、電子源、画像表示装置、および、電子放出素子の製造方法 |
| CN101470131B (zh) * | 2007-12-28 | 2010-06-23 | 清华大学 | 基于碳纳米管场致发射的梳齿结构微机械加速度计 |
| US20090221885A1 (en) * | 2008-02-25 | 2009-09-03 | Cardiac Pacemakers, Inc. | Optical Window Assembly for Implantable Medical Device |
| US8491718B2 (en) * | 2008-05-28 | 2013-07-23 | Karin Chaudhari | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
| US10199518B2 (en) | 2008-05-28 | 2019-02-05 | Solar-Tectic Llc | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
| US20090297774A1 (en) * | 2008-05-28 | 2009-12-03 | Praveen Chaudhari | Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon |
| US7783012B2 (en) * | 2008-09-15 | 2010-08-24 | General Electric Company | Apparatus for a surface graded x-ray tube insulator and method of assembling same |
| WO2011079138A2 (en) | 2009-12-21 | 2011-06-30 | California Institute Of Technology | Microfluidic electrospray thruster |
| WO2013004566A2 (en) * | 2011-07-04 | 2013-01-10 | Tetra Laval Holdings & Finance S.A. | An electron beam device, a getter sheet and a method of manufacturing an electron beam device provided with said getter sheet |
| FR2986367B1 (fr) * | 2012-01-27 | 2014-03-28 | Univ Lyon 1 Claude Bernard | Source d'electrons a emission de champ |
| US10384810B2 (en) | 2014-07-15 | 2019-08-20 | California Institute Of Technology | Micro-emitters for electrospray systems |
| CN108968976B (zh) | 2017-05-31 | 2022-09-13 | 心脏起搏器股份公司 | 具有化学传感器的植入式医疗设备 |
| US12004853B2 (en) | 2017-07-26 | 2024-06-11 | Cardiac Pacemakers, Inc. | Systems and methods for disambiguation of posture |
| CN109381195B (zh) | 2017-08-10 | 2023-01-10 | 心脏起搏器股份公司 | 包括电解质传感器融合的系统和方法 |
| CN109419515B (zh) | 2017-08-23 | 2023-03-24 | 心脏起搏器股份公司 | 具有分级激活的可植入化学传感器 |
| CN109864746B (zh) | 2017-12-01 | 2023-09-29 | 心脏起搏器股份公司 | 用于医学装置的多模式分析物传感器 |
| CN109864747B (zh) | 2017-12-05 | 2023-08-25 | 心脏起搏器股份公司 | 多模式分析物传感器光电子接口 |
| US10840163B2 (en) * | 2018-01-04 | 2020-11-17 | Mitsubishi Electric Research Laboratories, Inc. | Negative electroluminescent cooling device |
| US10943760B2 (en) * | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| CN110661170B (zh) * | 2019-08-13 | 2021-01-08 | 深圳市矽赫科技有限公司 | 一种用于制造半导体器件隔离结构的方法及其半导体器件 |
| CN119008363B (zh) * | 2024-07-05 | 2025-09-16 | 上海集成电路材料研究院有限公司 | 电子源结构及制作方法 |
Family Cites Families (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500101A (en) * | 1955-02-02 | 1970-03-10 | Sylvania Electric Prod | Photocapacitive electroluminescent light amplifier |
| US3277313A (en) * | 1963-07-05 | 1966-10-04 | Burroughs Corp | Solid state quantum mechanical tunneling apparatus |
| GB1309423A (en) * | 1969-03-14 | 1973-03-14 | Matsushita Electric Industrial Co Ltd | Field-emission cathodes and methods for preparing these cathodes |
| DE2012192A1 (de) * | 1970-03-14 | 1971-10-07 | Philips Nv | Elektrische Entladungsrohre mit einer Kathode bestehend aus einer zwischen zwei leitenden Schichten hegenden Isolierschicht, und Verfahren zur Herstellung einer fur eine derartige Entladungsrohre bestimmte Kathode |
| US3671798A (en) * | 1970-12-11 | 1972-06-20 | Nasa | Method and apparatus for limiting field-emission current |
| US3735186A (en) * | 1971-03-10 | 1973-05-22 | Philips Corp | Field emission cathode |
| DE2222845A1 (de) * | 1971-05-17 | 1972-12-07 | Itt Ind Gmbh Deutsche | Emittierende Elektrode und Verfahren zu ihrer Herstellung |
| US3783325A (en) * | 1971-10-21 | 1974-01-01 | Us Army | Field effect electron gun having at least a million emitting fibers per square centimeter |
| US3745402A (en) * | 1971-12-17 | 1973-07-10 | J Shelton | Field effect electron emitter |
| US3746905A (en) * | 1971-12-21 | 1973-07-17 | Us Army | High vacuum, field effect electron tube |
| US3840955A (en) * | 1973-12-12 | 1974-10-15 | J Hagood | Method for producing a field effect control device |
| GB1466534A (en) * | 1974-03-08 | 1977-03-09 | Burroughs Corp | Cold cathode diplay device and method of making such devices |
| GB1555800A (en) * | 1976-11-04 | 1979-11-14 | Emi Varian Ltd | Electron emitters |
| US4472658A (en) * | 1980-05-13 | 1984-09-18 | Futaba Denshi Kogyo Kabushiki Kaisha | Fluorescent display device |
| US4498952A (en) * | 1982-09-17 | 1985-02-12 | Condesin, Inc. | Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns |
| US5327050A (en) * | 1986-07-04 | 1994-07-05 | Canon Kabushiki Kaisha | Electron emitting device and process for producing the same |
| DE3782247D1 (de) * | 1987-04-22 | 1992-11-19 | Christensen Alton O | Feldemissionsvorrichtung. |
| GB2204991B (en) * | 1987-05-18 | 1991-10-02 | Gen Electric Plc | Vacuum electronic devices |
| US5872541A (en) * | 1987-07-15 | 1999-02-16 | Canon Kabushiki Kaisha | Method for displaying images with electron emitting device |
| US5066883A (en) * | 1987-07-15 | 1991-11-19 | Canon Kabushiki Kaisha | Electron-emitting device with electron-emitting region insulated from electrodes |
| GB8816689D0 (en) * | 1988-07-13 | 1988-08-17 | Emi Plc Thorn | Method of manufacturing cold cathode field emission device & field emission device manufactured by method |
| FR2650119A1 (fr) * | 1989-07-21 | 1991-01-25 | Thomson Tubes Electroniques | Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation |
| US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
| US5142184B1 (en) * | 1990-02-09 | 1995-11-21 | Motorola Inc | Cold cathode field emission device with integral emitter ballasting |
| WO1991019023A2 (en) * | 1990-05-25 | 1991-12-12 | Savin Corporation | Electrophoretically deposited particle coatings and structures made therefrom |
| US5312514A (en) * | 1991-11-07 | 1994-05-17 | Microelectronics And Computer Technology Corporation | Method of making a field emitter device using randomly located nuclei as an etch mask |
| US5211707A (en) * | 1991-07-11 | 1993-05-18 | Gte Laboratories Incorporated | Semiconductor metal composite field emission cathodes |
| US5258685A (en) * | 1991-08-20 | 1993-11-02 | Motorola, Inc. | Field emission electron source employing a diamond coating |
| US5129850A (en) * | 1991-08-20 | 1992-07-14 | Motorola, Inc. | Method of making a molded field emission electron emitter employing a diamond coating |
| US5141460A (en) * | 1991-08-20 | 1992-08-25 | Jaskie James E | Method of making a field emission electron source employing a diamond coating |
| JP3255960B2 (ja) * | 1991-09-30 | 2002-02-12 | 株式会社神戸製鋼所 | 冷陰極エミッタ素子 |
| US5252833A (en) * | 1992-02-05 | 1993-10-12 | Motorola, Inc. | Electron source for depletion mode electron emission apparatus |
| US5290610A (en) * | 1992-02-13 | 1994-03-01 | Motorola, Inc. | Forming a diamond material layer on an electron emitter using hydrocarbon reactant gases ionized by emitted electrons |
| US5371431A (en) * | 1992-03-04 | 1994-12-06 | Mcnc | Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions |
| US5278475A (en) * | 1992-06-01 | 1994-01-11 | Motorola, Inc. | Cathodoluminescent display apparatus and method for realization using diamond crystallites |
| JP3231528B2 (ja) * | 1993-08-17 | 2001-11-26 | 株式会社東芝 | 電界放出型冷陰極およびその製造方法 |
| US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
| US5597338A (en) * | 1993-03-01 | 1997-01-28 | Canon Kabushiki Kaisha | Method for manufacturing surface-conductive electron beam source device |
| WO1994020975A1 (en) * | 1993-03-11 | 1994-09-15 | Fed Corporation | Emitter tip structure and field emission device comprising same, and method of making same |
| EP0623944B1 (en) * | 1993-05-05 | 1997-07-02 | AT&T Corp. | Flat panel display apparatus, and method of making same |
| JPH08510858A (ja) * | 1993-06-02 | 1996-11-12 | マイクロイレクトラニクス、アンド、カムピュータ、テクナラジ、コーパレイシャン | 非晶質ダイヤモンド・フイルムの平坦な電界放出陰極 |
| KR0139489B1 (ko) * | 1993-07-08 | 1998-06-01 | 호소야 레이지 | 전계방출형 표시장치 |
| US5463271A (en) * | 1993-07-09 | 1995-10-31 | Silicon Video Corp. | Structure for enhancing electron emission from carbon-containing cathode |
| US5564959A (en) * | 1993-09-08 | 1996-10-15 | Silicon Video Corporation | Use of charged-particle tracks in fabricating gated electron-emitting devices |
| JP3269065B2 (ja) * | 1993-09-24 | 2002-03-25 | 住友電気工業株式会社 | 電子デバイス |
| JP2699827B2 (ja) * | 1993-09-27 | 1998-01-19 | 双葉電子工業株式会社 | 電界放出カソード素子 |
| WO1995012835A1 (en) * | 1993-11-04 | 1995-05-11 | Microelectronics And Computer Technology Corporation | Methods for fabricating flat panel display systems and components |
| EP0681312B1 (en) * | 1993-11-24 | 2003-02-26 | TDK Corporation | Cold-cathode electron source element and method for producing the same |
| ATE194727T1 (de) * | 1993-12-17 | 2000-07-15 | Canon Kk | Herstellungsverfahren einer elektronen emittierenden vorrichtung, einer elektronenquelle und eine bilderzeugungsvorrichtung |
| US5445550A (en) * | 1993-12-22 | 1995-08-29 | Xie; Chenggang | Lateral field emitter device and method of manufacturing same |
| US5578901A (en) * | 1994-02-14 | 1996-11-26 | E. I. Du Pont De Nemours And Company | Diamond fiber field emitters |
| US5602439A (en) * | 1994-02-14 | 1997-02-11 | The Regents Of The University Of California, Office Of Technology Transfer | Diamond-graphite field emitters |
| DE4405768A1 (de) * | 1994-02-23 | 1995-08-24 | Till Keesmann | Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung |
| EP0675519A1 (en) * | 1994-03-30 | 1995-10-04 | AT&T Corp. | Apparatus comprising field emitters |
| EP0687018B1 (en) * | 1994-05-18 | 2003-02-19 | Kabushiki Kaisha Toshiba | Device for emitting electrons |
| US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
| WO1996002063A1 (en) * | 1994-07-12 | 1996-01-25 | Amoco Corporation | Volcano-shaped field emitter structures |
| GB9416754D0 (en) * | 1994-08-18 | 1994-10-12 | Isis Innovation | Field emitter structures |
| US5504385A (en) * | 1994-08-31 | 1996-04-02 | At&T Corp. | Spaced-gate emission device and method for making same |
| EP0700065B1 (en) * | 1994-08-31 | 2001-09-19 | AT&T Corp. | Field emission device and method for making same |
| EP0700063A1 (en) * | 1994-08-31 | 1996-03-06 | International Business Machines Corporation | Structure and method for fabricating of a field emission device |
| EP0706196B1 (en) * | 1994-10-05 | 2000-03-01 | Matsushita Electric Industrial Co., Ltd. | An electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode |
| US5646702A (en) * | 1994-10-31 | 1997-07-08 | Honeywell Inc. | Field emitter liquid crystal display |
| US5637950A (en) * | 1994-10-31 | 1997-06-10 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
| US5623180A (en) * | 1994-10-31 | 1997-04-22 | Lucent Technologies Inc. | Electron field emitters comprising particles cooled with low voltage emitting material |
| EP0713236A1 (en) * | 1994-11-18 | 1996-05-22 | Texas Instruments Incorporated | Electron emission apparatus |
| EP0716438A1 (en) * | 1994-12-06 | 1996-06-12 | International Business Machines Corporation | Field emission device and method for fabricating it |
| JP3423511B2 (ja) * | 1994-12-14 | 2003-07-07 | キヤノン株式会社 | 画像形成装置及びゲッタ材の活性化方法 |
| US5709577A (en) * | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
| US5543691A (en) * | 1995-05-11 | 1996-08-06 | Raytheon Company | Field emission display with focus grid and method of operating same |
| US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
| US5628662A (en) * | 1995-08-30 | 1997-05-13 | Texas Instruments Incorporated | Method of fabricating a color field emission flat panel display tetrode |
-
1996
- 1996-08-02 WO PCT/GB1996/001858 patent/WO1997006549A1/en not_active Ceased
- 1996-08-02 KR KR10-1998-0700810A patent/KR100405886B1/ko not_active Expired - Fee Related
- 1996-08-02 US US09/011,345 patent/US6097139A/en not_active Expired - Fee Related
- 1996-08-02 DE DE69607356T patent/DE69607356T2/de not_active Expired - Fee Related
- 1996-08-02 AU AU66260/96A patent/AU6626096A/en not_active Abandoned
- 1996-08-02 CN CN96196039A patent/CN1103110C/zh not_active Expired - Fee Related
- 1996-08-02 EP EP96925901A patent/EP0842526B1/en not_active Expired - Lifetime
- 1996-08-02 CA CA002227322A patent/CA2227322A1/en not_active Abandoned
- 1996-08-02 JP JP9508212A patent/JPH11510307A/ja not_active Ceased
- 1996-08-02 GB GB9616334A patent/GB2304989B/en not_active Expired - Fee Related
- 1996-08-02 ES ES96925901T patent/ES2146890T3/es not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7811625B2 (en) | 2002-06-13 | 2010-10-12 | Canon Kabushiki Kaisha | Method for manufacturing electron-emitting device |
| US7682213B2 (en) | 2003-06-11 | 2010-03-23 | Canon Kabushiki Kaisha | Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen |
| US7583016B2 (en) | 2004-12-10 | 2009-09-01 | Canon Kabushiki Kaisha | Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device |
| WO2007116524A1 (ja) | 2006-04-11 | 2007-10-18 | Norio Akamatsu | 電界放出発電装置 |
| WO2007122709A1 (ja) | 2006-04-20 | 2007-11-01 | Norio Akamatsu | 線形加速発電装置 |
| WO2007135717A1 (ja) | 2006-05-19 | 2007-11-29 | Norio Akamatsu | 電界放出発電装置 |
| WO2009153981A1 (ja) | 2008-06-16 | 2009-12-23 | Akamatsu Norio | 電界効果発電装置 |
| JP2019029194A (ja) * | 2017-07-31 | 2019-02-21 | シャープ株式会社 | 電子放出素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU6626096A (en) | 1997-03-05 |
| WO1997006549A1 (en) | 1997-02-20 |
| EP0842526B1 (en) | 2000-03-22 |
| KR100405886B1 (ko) | 2004-04-03 |
| DE69607356D1 (de) | 2000-04-27 |
| GB2304989A (en) | 1997-03-26 |
| DE69607356T2 (de) | 2000-12-07 |
| CN1192288A (zh) | 1998-09-02 |
| GB2304989B (en) | 1997-09-03 |
| GB9616334D0 (en) | 1996-09-11 |
| KR19990036142A (ko) | 1999-05-25 |
| US6097139A (en) | 2000-08-01 |
| EP0842526A1 (en) | 1998-05-20 |
| CA2227322A1 (en) | 1997-02-20 |
| CN1103110C (zh) | 2003-03-12 |
| ES2146890T3 (es) | 2000-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH11510307A (ja) | 電界電子放出材料および装置 | |
| US6741025B2 (en) | Field electron emission materials with insulating material disposed in particular area and devices | |
| US6770497B2 (en) | Field emission emitter | |
| US5551903A (en) | Flat panel display based on diamond thin films | |
| CN100474482C (zh) | 电子发射体及其制造方法、冷阴极场致电子发射部件及其制造方法和冷阴极场致电子发射显示装置及其制造方法 | |
| US5623180A (en) | Electron field emitters comprising particles cooled with low voltage emitting material | |
| WO2001031671A1 (en) | Method of fabricating a field emission device with a lateral thin-film edge emitter | |
| TWI277120B (en) | Field emission device and field emission display device using the same | |
| US6840835B1 (en) | Field emitters and devices | |
| US7112353B2 (en) | Film deposition apparatus and film deposition method | |
| JP2000100317A (ja) | 電界電子放出装置 | |
| JP2003249166A (ja) | 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 | |
| GB2306246A (en) | Field electron emission devices with gettering material | |
| JP2002197965A (ja) | 電子放出装置、冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法 | |
| JP3546606B2 (ja) | 電界放出素子の製造方法 | |
| TW388058B (en) | Fidle electron emission materials and devices | |
| US6144145A (en) | High performance field emitter and method of producing the same | |
| JP4622145B2 (ja) | 電子放出装置の製造方法、冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法 | |
| JP2002093308A (ja) | 電子放出素子、電子源、画像形成装置、及び電子放出素子の製造方法 | |
| JP2005079071A (ja) | 電子放出素子及び画像表示装置 | |
| GB2344686A (en) | Field electron emission materials and devices | |
| JP2006260790A (ja) | 微小電子源装置、カソードパネル及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060926 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060823 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20061215 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070209 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070323 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080909 |
|
| A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20090120 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090324 |