JPH11354640A5 - - Google Patents

Info

Publication number
JPH11354640A5
JPH11354640A5 JP1999135255A JP13525599A JPH11354640A5 JP H11354640 A5 JPH11354640 A5 JP H11354640A5 JP 1999135255 A JP1999135255 A JP 1999135255A JP 13525599 A JP13525599 A JP 13525599A JP H11354640 A5 JPH11354640 A5 JP H11354640A5
Authority
JP
Japan
Prior art keywords
dielectric layer
dielectric
layers
metallization levels
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1999135255A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11354640A (ja
Filing date
Publication date
Priority claimed from FR9806687A external-priority patent/FR2779274B1/fr
Application filed filed Critical
Publication of JPH11354640A publication Critical patent/JPH11354640A/ja
Publication of JPH11354640A5 publication Critical patent/JPH11354640A5/ja
Withdrawn legal-status Critical Current

Links

JP11135255A 1998-05-27 1999-05-17 集積回路を製造するプロセスおよび集積回路 Withdrawn JPH11354640A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9806687 1998-05-27
FR9806687A FR2779274B1 (fr) 1998-05-27 1998-05-27 Circuit integre avec couche d'arret et procede de fabrication associe

Publications (2)

Publication Number Publication Date
JPH11354640A JPH11354640A (ja) 1999-12-24
JPH11354640A5 true JPH11354640A5 (enExample) 2006-06-22

Family

ID=9526773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11135255A Withdrawn JPH11354640A (ja) 1998-05-27 1999-05-17 集積回路を製造するプロセスおよび集積回路

Country Status (4)

Country Link
US (2) US6355552B1 (enExample)
EP (1) EP0961318A1 (enExample)
JP (1) JPH11354640A (enExample)
FR (1) FR2779274B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6977224B2 (en) * 2000-12-28 2005-12-20 Intel Corporation Method of electroless introduction of interconnect structures
US7008872B2 (en) * 2002-05-03 2006-03-07 Intel Corporation Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
KR20040061817A (ko) * 2002-12-31 2004-07-07 주식회사 하이닉스반도체 반도체소자의 금속배선 형성방법
US7087104B2 (en) 2003-06-26 2006-08-08 Intel Corporation Preparation of electroless deposition solutions
US7767578B2 (en) * 2007-01-11 2010-08-03 United Microelectronics Corp. Damascene interconnection structure and dual damascene process thereof
JP5837754B2 (ja) * 2011-03-23 2015-12-24 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP5923334B2 (ja) * 2012-02-22 2016-05-24 ルネサスエレクトロニクス株式会社 半導体装置
JP6816964B2 (ja) * 2016-03-10 2021-01-20 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
US10862610B1 (en) 2019-11-11 2020-12-08 X Development Llc Multi-channel integrated photonic wavelength demultiplexer
US11187854B2 (en) * 2019-11-15 2021-11-30 X Development Llc Two-channel integrated photonic wavelength demultiplexer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5110712A (en) * 1987-06-12 1992-05-05 Hewlett-Packard Company Incorporation of dielectric layers in a semiconductor
US5321211A (en) * 1992-04-30 1994-06-14 Sgs-Thomson Microelectronics, Inc. Integrated circuit via structure
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer
US5244837A (en) * 1993-03-19 1993-09-14 Micron Semiconductor, Inc. Semiconductor electrical interconnection methods
US5817574A (en) * 1993-12-29 1998-10-06 Intel Corporation Method of forming a high surface area interconnection structure
US5451543A (en) * 1994-04-25 1995-09-19 Motorola, Inc. Straight sidewall profile contact opening to underlying interconnect and method for making the same
JPH08241924A (ja) * 1995-03-06 1996-09-17 Sony Corp 接続孔を有する半導体装置及びその製造方法
US5834845A (en) * 1995-09-21 1998-11-10 Advanced Micro Devices, Inc. Interconnect scheme for integrated circuits
JPH10242271A (ja) * 1997-02-28 1998-09-11 Sony Corp 半導体装置及びその製造方法
US5935868A (en) * 1997-03-31 1999-08-10 Intel Corporation Interconnect structure and method to achieve unlanded vias for low dielectric constant materials
US5891799A (en) * 1997-08-18 1999-04-06 Industrial Technology Research Institute Method for making stacked and borderless via structures for multilevel metal interconnections on semiconductor substrates
US6020255A (en) * 1998-07-13 2000-02-01 Taiwan Semiconductor Manufacturing Company Dual damascene interconnect process with borderless contact
US6048787A (en) * 1998-09-08 2000-04-11 Winbond Electronics Corp. Borderless contacts for dual-damascene interconnect process

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