JPH11265938A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH11265938A
JPH11265938A JP10068309A JP6830998A JPH11265938A JP H11265938 A JPH11265938 A JP H11265938A JP 10068309 A JP10068309 A JP 10068309A JP 6830998 A JP6830998 A JP 6830998A JP H11265938 A JPH11265938 A JP H11265938A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
barrier metal
forming
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10068309A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11265938A5 (enExample
Inventor
Junichiro Iba
淳一郎 井場
Masaki Narita
雅貴 成田
Tomio Katada
富夫 堅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10068309A priority Critical patent/JPH11265938A/ja
Priority to US09/268,678 priority patent/US6313535B1/en
Publication of JPH11265938A publication Critical patent/JPH11265938A/ja
Publication of JPH11265938A5 publication Critical patent/JPH11265938A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10068309A 1998-03-18 1998-03-18 半導体装置及びその製造方法 Pending JPH11265938A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10068309A JPH11265938A (ja) 1998-03-18 1998-03-18 半導体装置及びその製造方法
US09/268,678 US6313535B1 (en) 1998-03-18 1999-03-16 Wiring layer of a semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10068309A JPH11265938A (ja) 1998-03-18 1998-03-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11265938A true JPH11265938A (ja) 1999-09-28
JPH11265938A5 JPH11265938A5 (enExample) 2005-07-14

Family

ID=13370089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10068309A Pending JPH11265938A (ja) 1998-03-18 1998-03-18 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US6313535B1 (enExample)
JP (1) JPH11265938A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040191697A1 (en) * 2003-03-24 2004-09-30 Communications Research Laboratory Method for processing a niobium type thin film and method for manufacturing a superconducting integrated circuit
JP4447419B2 (ja) * 2004-09-29 2010-04-07 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158613A (en) * 1978-12-04 1979-06-19 Burroughs Corporation Method of forming a metal interconnect structure for integrated circuits
US4786962A (en) * 1986-06-06 1988-11-22 Hewlett-Packard Company Process for fabricating multilevel metal integrated circuits and structures produced thereby
JP2655213B2 (ja) * 1991-10-14 1997-09-17 三菱電機株式会社 半導体装置の配線接続構造およびその製造方法
US5635763A (en) * 1993-03-22 1997-06-03 Sanyo Electric Co., Ltd. Semiconductor device having cap-metal layer
US5518805A (en) * 1994-04-28 1996-05-21 Xerox Corporation Hillock-free multilayer metal lines for high performance thin film structures
US5818110A (en) * 1996-11-22 1998-10-06 International Business Machines Corporation Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same

Also Published As

Publication number Publication date
US6313535B1 (en) 2001-11-06

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