JPH11224960A - Ｌｅｄランプ並びにｌｅｄチップ - Google Patents

Ｌｅｄランプ並びにｌｅｄチップ

Info

Publication number
JPH11224960A
JPH11224960A JP32874498A JP32874498A JPH11224960A JP H11224960 A JPH11224960 A JP H11224960A JP 32874498 A JP32874498 A JP 32874498A JP 32874498 A JP32874498 A JP 32874498A JP H11224960 A JPH11224960 A JP H11224960A
Authority
JP
Japan
Prior art keywords
light
chip
led
light emitting
led lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP32874498A
Other languages
English (en)
Japanese (ja)
Inventor
Hassan Paddy Abdel Salam
ハッサン・パディ・アブデル・サラム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisplay SA
Original Assignee
Unisplay SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26312629&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH11224960(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from GBGB9724507.0A external-priority patent/GB9724507D0/en
Priority claimed from GBGB9820311.0A external-priority patent/GB9820311D0/en
Application filed by Unisplay SA filed Critical Unisplay SA
Publication of JPH11224960A publication Critical patent/JPH11224960A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP32874498A 1997-11-19 1998-11-19 Ｌｅｄランプ並びにｌｅｄチップ Withdrawn JPH11224960A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB9724507.0 1997-11-19
GBGB9724507.0A GB9724507D0 (en) 1997-09-12 1997-11-19 Light source arrangements
GB9820311.0 1998-09-17
GBGB9820311.0A GB9820311D0 (en) 1997-11-19 1998-09-17 Led lamp

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010113662A Division JP2010177711A (ja) 1997-11-19 2010-05-17 Ｌｅｄランプ並びにｌｅｄチップ

Publications (1)

Publication Number Publication Date
JPH11224960A true JPH11224960A (ja) 1999-08-17

Family

ID=26312629

Family Applications (4)

Application Number Title Priority Date Filing Date
JP32874498A Withdrawn JPH11224960A (ja) 1997-11-19 1998-11-19 Ｌｅｄランプ並びにｌｅｄチップ
JP2010113662A Pending JP2010177711A (ja) 1997-11-19 2010-05-17 Ｌｅｄランプ並びにｌｅｄチップ
JP2012133727A Pending JP2012195605A (ja) 1997-11-19 2012-06-13 Ｌｅｄランプ並びにｌｅｄチップ
JP2014175011A Expired - Lifetime JP5898277B2 (ja) 1997-11-19 2014-08-29 Ｌｅｄランプ並びにｌｅｄチップ

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2010113662A Pending JP2010177711A (ja) 1997-11-19 2010-05-17 Ｌｅｄランプ並びにｌｅｄチップ
JP2012133727A Pending JP2012195605A (ja) 1997-11-19 2012-06-13 Ｌｅｄランプ並びにｌｅｄチップ
JP2014175011A Expired - Lifetime JP5898277B2 (ja) 1997-11-19 2014-08-29 Ｌｅｄランプ並びにｌｅｄチップ

Country Status (3)

Country Link
US (2) US6346771B1 (enExample)
JP (4) JPH11224960A (enExample)
GB (1) GB2331625B (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2004503114A (ja) * 2000-07-10 2004-01-29 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 光放射形半導体チップ
JP2004505434A (ja) * 1999-12-03 2004-02-19 クリー　インコーポレイテッド 光抽出を向上させた微小発光ダイオードアレイ
US6870191B2 (en) 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
JP2008166784A (ja) * 2007-01-03 2008-07-17 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
JP2009182324A (ja) * 2008-01-30 2009-08-13 Foxsemicon Intergated Technology Inc 半導体発光素子
US7683386B2 (en) 2003-08-19 2010-03-23 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
JP2013062543A (ja) * 1999-12-01 2013-04-04 Cree Inc 改良された電流拡散構造を有するスケーラブルｌｅｄ
JP2013150018A (ja) * 2008-09-09 2013-08-01 Bridgelux Inc 向上した電極構造を有する発光素子
JP2014096592A (ja) * 2012-11-09 2014-05-22 Seoul Viosys Co Ltd 発光素子及びそれを製造する方法
JP2015079953A (ja) * 2013-09-13 2015-04-23 日亜化学工業株式会社 発光素子
WO2022059280A1 (ja) * 2020-09-16 2022-03-24 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633120B2 (en) * 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
DE10016817A1 (de) * 2000-04-05 2001-10-18 Mannesmann Vdo Ag Farb-Head-up Display, insbesondere für ein Fahrzeug
US6525464B1 (en) * 2000-09-08 2003-02-25 Unity Opto Technology Co., Ltd. Stacked light-mixing LED
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
KR100401005B1 (ko) * 2001-08-27 2003-10-10 동부전자 주식회사 마스크롬 제조방법
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
CN1653297B (zh) * 2002-05-08 2010-09-29 佛森技术公司 高效固态光源及其使用和制造方法
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
AU2003252359A1 (en) * 2002-08-01 2004-02-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CA2517009A1 (en) 2003-02-26 2004-09-10 Cree, Inc. White light source using emitting diode and phosphor and method of fabrication
US20040201990A1 (en) * 2003-04-10 2004-10-14 Meyer William E. LED lamp
EP1620903B1 (en) * 2003-04-30 2017-08-16 Cree, Inc. High-power solid state light emitter package
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US6945683B2 (en) * 2003-05-30 2005-09-20 Guide Corporation Thin lamp assembly method
US7073618B1 (en) 2003-07-01 2006-07-11 Polaris Industries Inc. Flush mounted taillight
CN100499184C (zh) * 2003-09-26 2009-06-10 奥斯兰姆奥普托半导体有限责任公司 发光薄膜半导体芯片
WO2005041632A2 (en) * 2003-10-31 2005-05-12 Phoseon Technology, Inc. Collection optics for led array with offset hemispherical or faceted surfaces
JP2005158369A (ja) * 2003-11-21 2005-06-16 Toyota Industries Corp 光学部材及び照明装置
EP1735844B1 (en) * 2004-03-18 2019-06-19 Phoseon Technology, Inc. Use of a high-density light emitting diode array comprising micro-reflectors for curing applications
US20080121917A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High efficiency white, single or multi-color light emitting diodes (leds) by index matching structures
KR101288758B1 (ko) * 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 산업 공정에서 광원을 사용하는 시스템 및 방법
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
KR20090018623A (ko) 2006-06-12 2009-02-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 재발광 반도체 구성 및 수렴 광학 요소를 갖는 ｌｅｄ 소자
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
KR20160150648A (ko) 2006-09-29 2016-12-30 오스람 실바니아 인코포레이티드 유기 발광 소자 및 조명 장치
US8110838B2 (en) * 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
JP4901453B2 (ja) * 2006-12-20 2012-03-21 東芝ディスクリートテクノロジー株式会社 半導体発光素子
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
AU2012201421B2 (en) * 2007-10-25 2012-08-16 Lsi Industries, Inc. Reflector
US20090109689A1 (en) * 2007-10-25 2009-04-30 Lsi Industries, Inc. Reflector
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
USD631017S1 (en) * 2009-09-28 2011-01-18 Toyoda Gosei Co., Ltd. Light emitting diode chip
USD631018S1 (en) * 2009-09-28 2011-01-18 Toyoda Gosei Co., Ltd. Light emitting diode chip
USD620897S1 (en) * 2009-10-29 2010-08-03 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD633876S1 (en) * 2009-10-30 2011-03-08 Semi LEDs Optoelectronics Co., Ltd. Light emitting diode device
USD620460S1 (en) * 2009-10-30 2010-07-27 SemiLEDs, Optoelectronics Co., Ltd. Light emitting diode device
US8981397B2 (en) * 2010-02-12 2015-03-17 Tsmc Solid State Lighting Ltd. Light-emitting devices on textured substrates
EP2458412A1 (en) 2010-11-24 2012-05-30 Université de Liège Method for manufacturing an improved optical layer of a light emitting device, and light emitting device with surface nano-micro texturation based on radiation speckle lithography.
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US11329195B2 (en) 2013-08-27 2022-05-10 Epistar Corporation Semiconductor light-emitting device
US9461209B2 (en) 2013-11-27 2016-10-04 Epistar Corporation Semiconductor light-emitting device
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
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US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
KR102659254B1 (ko) 2018-12-26 2024-04-22 엘지전자 주식회사 반도체 발광소자를 이용한 램프
CN114005926B (zh) * 2021-10-29 2024-02-27 淮安澳洋顺昌光电技术有限公司 导热层、发光二极管、半导体器件及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243609A (ja) * 1992-02-27 1993-09-21 Kyocera Corp 半導体発光素子
JPH065912A (ja) * 1992-06-18 1994-01-14 Sharp Corp 発光ダイオード
JPH065922A (ja) * 1992-06-24 1994-01-14 Rohm Co Ltd 多色発光ダイオード
JPH06318731A (ja) * 1993-03-12 1994-11-15 Sharp Corp 半導体発光装置
JPH07307489A (ja) * 1994-05-13 1995-11-21 Toshiba Corp 半導体発光素子及びその製造方法
JPH0997922A (ja) * 1995-09-29 1997-04-08 Sanyo Electric Co Ltd 発光素子
JPH09298310A (ja) * 1996-05-09 1997-11-18 Nichia Chem Ind Ltd 窒化物半導体素子

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
US3900863A (en) 1974-05-13 1975-08-19 Westinghouse Electric Corp Light-emitting diode which generates light in three dimensions
JPS5136085A (enExample) * 1974-09-24 1976-03-26 Mitsubishi Electric Corp
US4163953A (en) 1977-07-07 1979-08-07 Northern Telecom Limited Double heterostructure laser for direct coupling to an optical fiber
DE2755433C2 (de) * 1977-12-13 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Strahlungsemittierende Halbleiterdiode
US4225380A (en) 1978-09-05 1980-09-30 Wickens Justin H Method of producing light emitting semiconductor display
JPS5896781A (ja) * 1981-12-03 1983-06-08 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法
JPS6276686A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 発光素子
KR880014692A (ko) * 1987-05-30 1988-12-24 강진구 반사경이 부착된 반도체 발광장치
US4881237A (en) * 1988-08-26 1989-11-14 Massachusetts Institute Of Technology Hybrid two-dimensional surface-emitting laser arrays
US5087949A (en) * 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
EP0442002B1 (de) 1990-02-13 1994-01-12 Siemens Aktiengesellschaft Strahlungserzeugendes Halbleiterbauelement
JPH0658953B2 (ja) * 1990-03-16 1994-08-03 グローリー工業株式会社 半導体装置
JPH0487381A (ja) * 1990-07-31 1992-03-19 Eastman Kodak Japan Kk 発光ダイオードアレイチップ
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JP3423328B2 (ja) * 1991-12-09 2003-07-07 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2798545B2 (ja) 1992-03-03 1998-09-17 シャープ株式会社 半導体発光素子及びその製造方法
JP3312049B2 (ja) * 1993-03-12 2002-08-05 シャープ株式会社 半導体発光装置
JPH0786640A (ja) * 1993-06-17 1995-03-31 Nichia Chem Ind Ltd 発光デバイス
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JPH08139361A (ja) * 1994-11-08 1996-05-31 Toshiba Corp 化合物半導体発光素子
GB2309334B (en) * 1994-12-20 1997-11-19 Ultra Silicon Techn Uk Ltd Guiding light within electroluminescent devices
DE19517697A1 (de) * 1995-05-13 1996-11-14 Telefunken Microelectron Strahlungsemittierende Diode
JPH0936431A (ja) * 1995-07-13 1997-02-07 Toshiba Corp 半導体発光素子
DE19629920B4 (de) 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
DE19549818B4 (de) 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
JP3241976B2 (ja) * 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US5905275A (en) * 1996-06-17 1999-05-18 Kabushiki Kaisha Toshiba Gallium nitride compound semiconductor light-emitting device
US6045240A (en) * 1996-06-27 2000-04-04 Relume Corporation LED lamp assembly with means to conduct heat away from the LEDS
US5734225A (en) * 1996-07-10 1998-03-31 International Business Machines Corporation Encapsulation of organic light emitting devices using siloxane or siloxane derivatives
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
EP2169733B1 (de) * 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US6015719A (en) * 1997-10-24 2000-01-18 Hewlett-Packard Company Transparent substrate light emitting diodes with directed light output
JP3505374B2 (ja) * 1997-11-14 2004-03-08 三洋電機株式会社 発光部品
FR2780656B1 (fr) * 1998-07-03 2001-08-03 Dalloz Fall Prot Appareil anti-chute sur cable vertical

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243609A (ja) * 1992-02-27 1993-09-21 Kyocera Corp 半導体発光素子
JPH065912A (ja) * 1992-06-18 1994-01-14 Sharp Corp 発光ダイオード
JPH065922A (ja) * 1992-06-24 1994-01-14 Rohm Co Ltd 多色発光ダイオード
JPH06318731A (ja) * 1993-03-12 1994-11-15 Sharp Corp 半導体発光装置
JPH07307489A (ja) * 1994-05-13 1995-11-21 Toshiba Corp 半導体発光素子及びその製造方法
JPH0997922A (ja) * 1995-09-29 1997-04-08 Sanyo Electric Co Ltd 発光素子
JPH09298310A (ja) * 1996-05-09 1997-11-18 Nichia Chem Ind Ltd 窒化物半導体素子

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062543A (ja) * 1999-12-01 2013-04-04 Cree Inc 改良された電流拡散構造を有するスケーラブルｌｅｄ
JP2004505434A (ja) * 1999-12-03 2004-02-19 クリー　インコーポレイテッド 光抽出を向上させた微小発光ダイオードアレイ
JP2001345480A (ja) * 2000-03-31 2001-12-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2004503114A (ja) * 2000-07-10 2004-01-29 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 光放射形半導体チップ
US9368681B2 (en) 2001-07-24 2016-06-14 Nichia Corporation Semiconductor light emitting device
US6870191B2 (en) 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US7635875B2 (en) 2001-07-24 2009-12-22 Nichia Corporation Semiconductor light emitting device
US7745245B2 (en) 2001-07-24 2010-06-29 Nichia Corporation Semiconductor light emitting device
US7804101B2 (en) 2001-07-24 2010-09-28 Nichia Corporation Semiconductor light-emitting device
US10593833B2 (en) 2001-07-24 2020-03-17 Nichia Corporation Semiconductor light emitting device
US10396242B2 (en) 2001-07-24 2019-08-27 Nichia Corporation Semiconductor light emitting device
US9865773B2 (en) 2001-07-24 2018-01-09 Nichia Corporation Semiconductor light emitting device
US7683386B2 (en) 2003-08-19 2010-03-23 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
US8119534B2 (en) 2003-08-19 2012-02-21 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
JP2008166784A (ja) * 2007-01-03 2008-07-17 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
US8110847B2 (en) 2007-01-03 2012-02-07 Samsung Led Co., Ltd. Nitride-based semiconductor light emitting diode
JP2011142349A (ja) * 2007-01-03 2011-07-21 Samsung Led Co Ltd 窒化物半導体発光素子
JP2009182324A (ja) * 2008-01-30 2009-08-13 Foxsemicon Intergated Technology Inc 半導体発光素子
US9324915B2 (en) 2008-09-09 2016-04-26 Kabushiki Kaisha Toshiba Light-emitting device with improved electrode structures
JP2013150018A (ja) * 2008-09-09 2013-08-01 Bridgelux Inc 向上した電極構造を有する発光素子
JP2014096592A (ja) * 2012-11-09 2014-05-22 Seoul Viosys Co Ltd 発光素子及びそれを製造する方法
JP2015079953A (ja) * 2013-09-13 2015-04-23 日亜化学工業株式会社 発光素子
WO2022059280A1 (ja) * 2020-09-16 2022-03-24 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法
JP2022049620A (ja) * 2020-09-16 2022-03-29 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

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US20020063521A1 (en) 2002-05-30
US6720730B2 (en) 2004-04-13
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JP5898277B2 (ja) 2016-04-06
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GB2331625B (en) 2003-02-26

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