JPH11214511A5 - - Google Patents

Info

Publication number
JPH11214511A5
JPH11214511A5 JP1998014352A JP1435298A JPH11214511A5 JP H11214511 A5 JPH11214511 A5 JP H11214511A5 JP 1998014352 A JP1998014352 A JP 1998014352A JP 1435298 A JP1435298 A JP 1435298A JP H11214511 A5 JPH11214511 A5 JP H11214511A5
Authority
JP
Japan
Prior art keywords
semiconductor
insulating film
region
conductor layer
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998014352A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11214511A (ja
JP3885844B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP01435298A priority Critical patent/JP3885844B2/ja
Priority claimed from JP01435298A external-priority patent/JP3885844B2/ja
Publication of JPH11214511A publication Critical patent/JPH11214511A/ja
Priority to US09/767,441 priority patent/US20010002057A1/en
Priority to US09/853,971 priority patent/US6713822B2/en
Publication of JPH11214511A5 publication Critical patent/JPH11214511A5/ja
Application granted granted Critical
Publication of JP3885844B2 publication Critical patent/JP3885844B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP01435298A 1998-01-27 1998-01-27 半導体装置 Expired - Fee Related JP3885844B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP01435298A JP3885844B2 (ja) 1998-01-27 1998-01-27 半導体装置
US09/767,441 US20010002057A1 (en) 1998-01-27 2001-01-23 Semiconductor device and wiring method thereof
US09/853,971 US6713822B2 (en) 1998-01-27 2001-05-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01435298A JP3885844B2 (ja) 1998-01-27 1998-01-27 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005373651A Division JP2006148151A (ja) 2005-12-27 2005-12-27 半導体装置および半導体装置における配線方法

Publications (3)

Publication Number Publication Date
JPH11214511A JPH11214511A (ja) 1999-08-06
JPH11214511A5 true JPH11214511A5 (enExample) 2006-02-16
JP3885844B2 JP3885844B2 (ja) 2007-02-28

Family

ID=11858686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01435298A Expired - Fee Related JP3885844B2 (ja) 1998-01-27 1998-01-27 半導体装置

Country Status (2)

Country Link
US (2) US20010002057A1 (enExample)
JP (1) JP3885844B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815775B2 (en) * 2001-02-02 2004-11-09 Industrial Technology Research Institute ESD protection design with turn-on restraining method and structures
US7155747B2 (en) * 2001-08-17 2007-01-02 Bhc Engineering, Lp Head stabilizing system
DE20300117U1 (de) * 2003-01-08 2003-03-20 Bongartz, Karin, 52511 Geilenkirchen Schal
JP2006059841A (ja) * 2004-08-17 2006-03-02 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
TWI359490B (en) * 2008-01-30 2012-03-01 Novatek Microelectronics Corp Power mos device and layout

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176746A (en) 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
JPH0774353A (ja) * 1993-09-03 1995-03-17 Fujitsu Ltd 入出力保護回路
JP2591446B2 (ja) 1993-10-18 1997-03-19 日本電気株式会社 半導体装置およびその製造方法
JP3337578B2 (ja) 1994-11-29 2002-10-21 三菱電機システムエル・エス・アイ・デザイン株式会社 半導体装置およびその製造方法
JPH09307091A (ja) * 1996-05-10 1997-11-28 Sony Corp 増幅型固体撮像素子
US6097066A (en) * 1997-10-06 2000-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Electro-static discharge protection structure for semiconductor devices

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