JP3885844B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP3885844B2
JP3885844B2 JP01435298A JP1435298A JP3885844B2 JP 3885844 B2 JP3885844 B2 JP 3885844B2 JP 01435298 A JP01435298 A JP 01435298A JP 1435298 A JP1435298 A JP 1435298A JP 3885844 B2 JP3885844 B2 JP 3885844B2
Authority
JP
Japan
Prior art keywords
semiconductor
insulating film
semiconductor device
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01435298A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11214511A (ja
JPH11214511A5 (enExample
Inventor
規之 下地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP01435298A priority Critical patent/JP3885844B2/ja
Publication of JPH11214511A publication Critical patent/JPH11214511A/ja
Priority to US09/767,441 priority patent/US20010002057A1/en
Priority to US09/853,971 priority patent/US6713822B2/en
Publication of JPH11214511A5 publication Critical patent/JPH11214511A5/ja
Application granted granted Critical
Publication of JP3885844B2 publication Critical patent/JP3885844B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP01435298A 1998-01-27 1998-01-27 半導体装置 Expired - Fee Related JP3885844B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP01435298A JP3885844B2 (ja) 1998-01-27 1998-01-27 半導体装置
US09/767,441 US20010002057A1 (en) 1998-01-27 2001-01-23 Semiconductor device and wiring method thereof
US09/853,971 US6713822B2 (en) 1998-01-27 2001-05-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01435298A JP3885844B2 (ja) 1998-01-27 1998-01-27 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005373651A Division JP2006148151A (ja) 2005-12-27 2005-12-27 半導体装置および半導体装置における配線方法

Publications (3)

Publication Number Publication Date
JPH11214511A JPH11214511A (ja) 1999-08-06
JPH11214511A5 JPH11214511A5 (enExample) 2006-02-16
JP3885844B2 true JP3885844B2 (ja) 2007-02-28

Family

ID=11858686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01435298A Expired - Fee Related JP3885844B2 (ja) 1998-01-27 1998-01-27 半導体装置

Country Status (2)

Country Link
US (2) US20010002057A1 (enExample)
JP (1) JP3885844B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815775B2 (en) * 2001-02-02 2004-11-09 Industrial Technology Research Institute ESD protection design with turn-on restraining method and structures
US7155747B2 (en) * 2001-08-17 2007-01-02 Bhc Engineering, Lp Head stabilizing system
DE20300117U1 (de) * 2003-01-08 2003-03-20 Bongartz, Karin, 52511 Geilenkirchen Schal
JP2006059841A (ja) * 2004-08-17 2006-03-02 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
TWI359490B (en) * 2008-01-30 2012-03-01 Novatek Microelectronics Corp Power mos device and layout

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176746A (en) 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
JPH0774353A (ja) * 1993-09-03 1995-03-17 Fujitsu Ltd 入出力保護回路
JP2591446B2 (ja) 1993-10-18 1997-03-19 日本電気株式会社 半導体装置およびその製造方法
JP3337578B2 (ja) 1994-11-29 2002-10-21 三菱電機システムエル・エス・アイ・デザイン株式会社 半導体装置およびその製造方法
JPH09307091A (ja) * 1996-05-10 1997-11-28 Sony Corp 増幅型固体撮像素子
US6097066A (en) * 1997-10-06 2000-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Electro-static discharge protection structure for semiconductor devices

Also Published As

Publication number Publication date
US20010002057A1 (en) 2001-05-31
US20010020721A1 (en) 2001-09-13
JPH11214511A (ja) 1999-08-06
US6713822B2 (en) 2004-03-30

Similar Documents

Publication Publication Date Title
US11107912B2 (en) Trench gate semiconductor device with dummy gate electrode and manufacturing method of the same
US5355008A (en) Diamond shaped gate mesh for cellular MOS transistor array
US7276747B2 (en) Semiconductor device having screening electrode and method
JP3219045B2 (ja) 縦型ｍｉｓｆｅｔの製造方法
US10340147B2 (en) Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
JP3827954B2 (ja) Ｐｎ分離層をもつｉｇｂｔ
JP3885844B2 (ja) 半導体装置
JP3448138B2 (ja) 半導体装置の製造方法
JP2723868B2 (ja) 半導体装置
US20240145580A1 (en) Field-effect transistor with a dielectric structure having a gate dielectric and a shielding dielectric
JP4577948B2 (ja) オフセットゲート型電界効果トランジスタ
JP2006148151A (ja) 半導体装置および半導体装置における配線方法
JPH0837299A (ja) 半導体集積回路の保護回路
US20060220155A1 (en) Semiconductor device
JP3233002B2 (ja) 電界効果トランジスタ
JP2009016876A (ja) 半導体要素
JPH025484A (ja) Ｍｏｓ型半導体素子
JPH09129887A (ja) Ｓｏｉ構造の横型パワーｍｏｓｆｅｔ
JPH09186314A (ja) Ｍｏｓ型電界効果トランジスタ
JPH01166563A (ja) 半導体デバイス
JPH053323A (ja) Ｍｏｓ型半導体素子
JPH11145461A (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040128

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050930

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20051031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051226

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20051226

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20060111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060410

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060714

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060904

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20060911

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061114

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061114

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101201

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111201

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121201

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131201

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees