JPH1117035A - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法

Info

Publication number
JPH1117035A
JPH1117035A JP9167404A JP16740497A JPH1117035A JP H1117035 A JPH1117035 A JP H1117035A JP 9167404 A JP9167404 A JP 9167404A JP 16740497 A JP16740497 A JP 16740497A JP H1117035 A JPH1117035 A JP H1117035A
Authority
JP
Japan
Prior art keywords
gate electrode
oxide film
trench
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9167404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1117035A5 (cg-RX-API-DMAC7.html
Inventor
Naho Nishioka
奈保 西岡
Natsuo Ajika
夏夫 味香
Hiroshi Onoda
宏 小野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9167404A priority Critical patent/JPH1117035A/ja
Priority to US09/003,641 priority patent/US5994733A/en
Publication of JPH1117035A publication Critical patent/JPH1117035A/ja
Publication of JPH1117035A5 publication Critical patent/JPH1117035A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP9167404A 1997-06-24 1997-06-24 不揮発性半導体記憶装置およびその製造方法 Pending JPH1117035A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9167404A JPH1117035A (ja) 1997-06-24 1997-06-24 不揮発性半導体記憶装置およびその製造方法
US09/003,641 US5994733A (en) 1997-06-24 1998-01-07 Nonvolatile semiconductor memory device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9167404A JPH1117035A (ja) 1997-06-24 1997-06-24 不揮発性半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1117035A true JPH1117035A (ja) 1999-01-22
JPH1117035A5 JPH1117035A5 (cg-RX-API-DMAC7.html) 2005-04-14

Family

ID=15849078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9167404A Pending JPH1117035A (ja) 1997-06-24 1997-06-24 不揮発性半導体記憶装置およびその製造方法

Country Status (2)

Country Link
US (1) US5994733A (cg-RX-API-DMAC7.html)
JP (1) JPH1117035A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6781188B2 (en) 2001-11-27 2004-08-24 Renesas Technology Corp. Nonvolatile semiconductor memory device

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1292337B1 (it) * 1997-05-20 1999-01-29 Sgs Thomson Microelectronics Struttura di un dispositivo di memoria a semiconduttore non volatile
US6346737B1 (en) * 1998-07-02 2002-02-12 Advanced Micro Devices, Inc. Shallow trench isolation process particularly suited for high voltage circuits
JP4334036B2 (ja) * 1998-07-31 2009-09-16 株式会社東芝 不揮発性半導体記憶装置
JP2000068484A (ja) * 1998-08-19 2000-03-03 Nec Corp 不揮発性半導体記憶装置及びその製造方法並びに不揮発 性半導体記憶装置を内蔵したマイクロコンピュータ及び その製造方法
JP2000174148A (ja) * 1998-12-09 2000-06-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
JP3895069B2 (ja) * 1999-02-22 2007-03-22 株式会社東芝 半導体装置とその製造方法
US6268250B1 (en) * 1999-05-14 2001-07-31 Micron Technology, Inc. Efficient fabrication process for dual well type structures
US6901006B1 (en) * 1999-07-14 2005-05-31 Hitachi, Ltd. Semiconductor integrated circuit device including first, second and third gates
JP3314763B2 (ja) * 1999-08-27 2002-08-12 日本電気株式会社 半導体記憶装置及びその製造方法
JP2001332708A (ja) * 2000-05-19 2001-11-30 Nec Corp 不揮発性半導体記憶装置及びその製造方法
JP2002064157A (ja) * 2000-06-09 2002-02-28 Toshiba Corp 半導体メモリ集積回路及びその製造方法
JP4096507B2 (ja) * 2000-09-29 2008-06-04 富士通株式会社 半導体装置の製造方法
JP4051175B2 (ja) * 2000-11-17 2008-02-20 スパンション エルエルシー 不揮発性半導体メモリ装置および製造方法
KR100426481B1 (ko) * 2001-06-26 2004-04-13 주식회사 하이닉스반도체 코드 저장 메모리 셀 제조 방법
US6790721B2 (en) * 2001-07-13 2004-09-14 Micron Technology, Inc. Metal local interconnect self-aligned source flash cell
US6706594B2 (en) * 2001-07-13 2004-03-16 Micron Technology, Inc. Optimized flash memory cell
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
KR100447433B1 (ko) * 2002-07-18 2004-09-07 주식회사 하이닉스반도체 이중 접합영역 형성방법 및 이를 이용한 전송 트랜지스터형성방법
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
JP2004228421A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
US6909139B2 (en) * 2003-06-27 2005-06-21 Infineon Technologies Ag One transistor flash memory cell
KR100562318B1 (ko) * 2003-12-26 2006-03-22 동부아남반도체 주식회사 비휘발성 반도체 메모리 소자 및 그 제조 방법
KR100564629B1 (ko) * 2004-07-06 2006-03-28 삼성전자주식회사 이이피롬 소자 및 그 제조 방법
JP2006108310A (ja) * 2004-10-04 2006-04-20 Toshiba Corp 不揮発性半導体記憶装置とその製造方法
JP2007335750A (ja) * 2006-06-16 2007-12-27 Toshiba Corp 半導体記憶装置
JP2008305832A (ja) * 2007-06-05 2008-12-18 Panasonic Corp 不揮発性半導体記憶装置及びその製造方法
US9768182B2 (en) * 2015-10-20 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905062A (en) * 1987-11-19 1990-02-27 Texas Instruments Incorporated Planar famos transistor with trench isolation
JPH02239671A (ja) * 1989-03-13 1990-09-21 Nec Corp 不揮発性半導体記憶装置の製造方法
JPH09275196A (ja) * 1996-04-03 1997-10-21 Sony Corp 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6781188B2 (en) 2001-11-27 2004-08-24 Renesas Technology Corp. Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
US5994733A (en) 1999-11-30

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