IT1292337B1 - Struttura di un dispositivo di memoria a semiconduttore non volatile - Google Patents
Struttura di un dispositivo di memoria a semiconduttore non volatileInfo
- Publication number
- IT1292337B1 IT1292337B1 IT97MI001167A ITMI971167A IT1292337B1 IT 1292337 B1 IT1292337 B1 IT 1292337B1 IT 97MI001167 A IT97MI001167 A IT 97MI001167A IT MI971167 A ITMI971167 A IT MI971167A IT 1292337 B1 IT1292337 B1 IT 1292337B1
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- semiconductor memory
- volatile semiconductor
- non volatile
- volatile
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT97MI001167A IT1292337B1 (it) | 1997-05-20 | 1997-05-20 | Struttura di un dispositivo di memoria a semiconduttore non volatile |
| US09/081,881 US6307229B2 (en) | 1997-05-20 | 1998-05-19 | Nonvolatile semiconductor memory device structure with superimposed bit lines and short-circuit metal strips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT97MI001167A IT1292337B1 (it) | 1997-05-20 | 1997-05-20 | Struttura di un dispositivo di memoria a semiconduttore non volatile |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITMI971167A0 ITMI971167A0 (it) | 1997-05-20 |
| ITMI971167A1 ITMI971167A1 (it) | 1998-11-20 |
| IT1292337B1 true IT1292337B1 (it) | 1999-01-29 |
Family
ID=11377164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT97MI001167A IT1292337B1 (it) | 1997-05-20 | 1997-05-20 | Struttura di un dispositivo di memoria a semiconduttore non volatile |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6307229B2 (it) |
| IT (1) | IT1292337B1 (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001110810A (ja) * | 1999-10-06 | 2001-04-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6545310B2 (en) * | 2001-04-30 | 2003-04-08 | Motorola, Inc. | Non-volatile memory with a serial transistor structure with isolated well and method of operation |
| US7135727B2 (en) * | 2004-11-10 | 2006-11-14 | Macronix International Co., Ltd. | I-shaped and L-shaped contact structures and their fabrication methods |
| CN111916137A (zh) * | 2020-08-05 | 2020-11-10 | 珠海创飞芯科技有限公司 | Otp存储单元及otp存储阵列器件 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023681A (en) * | 1988-10-08 | 1991-06-11 | Hyundai Electronics Industries Co., Ltd. | Method for arranging EEPROM cells and a semiconductor device manufactured by the method |
| US5889302A (en) * | 1997-04-21 | 1999-03-30 | Advanced Micro Devices, Inc. | Multilayer floating gate field effect transistor structure for use in integrated circuit devices |
| JPH1117035A (ja) * | 1997-06-24 | 1999-01-22 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
-
1997
- 1997-05-20 IT IT97MI001167A patent/IT1292337B1/it active IP Right Grant
-
1998
- 1998-05-19 US US09/081,881 patent/US6307229B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6307229B2 (en) | 2001-10-23 |
| US20010001492A1 (en) | 2001-05-24 |
| ITMI971167A0 (it) | 1997-05-20 |
| ITMI971167A1 (it) | 1998-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |