JPH1117000A5 - - Google Patents

Info

Publication number
JPH1117000A5
JPH1117000A5 JP1997171773A JP17177397A JPH1117000A5 JP H1117000 A5 JPH1117000 A5 JP H1117000A5 JP 1997171773 A JP1997171773 A JP 1997171773A JP 17177397 A JP17177397 A JP 17177397A JP H1117000 A5 JPH1117000 A5 JP H1117000A5
Authority
JP
Japan
Prior art keywords
field shield
film
oxide film
gate electrode
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997171773A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1117000A (ja
Filing date
Publication date
Priority claimed from JP9171773A external-priority patent/JPH1117000A/ja
Priority to JP9171773A priority Critical patent/JPH1117000A/ja
Application filed filed Critical
Priority to TW086115830A priority patent/TW357433B/zh
Priority to KR1019970066589A priority patent/KR100257594B1/ko
Priority to US08/990,285 priority patent/US6191450B1/en
Priority to FR9800606A priority patent/FR2765396B1/fr
Priority to DE19805692A priority patent/DE19805692C2/de
Priority to CN98105764A priority patent/CN1118868C/zh
Publication of JPH1117000A publication Critical patent/JPH1117000A/ja
Priority to FR0101304A priority patent/FR2803095B1/fr
Publication of JPH1117000A5 publication Critical patent/JPH1117000A5/ja
Pending legal-status Critical Current

Links

JP9171773A 1997-06-27 1997-06-27 半導体装置およびその製造方法 Pending JPH1117000A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP9171773A JPH1117000A (ja) 1997-06-27 1997-06-27 半導体装置およびその製造方法
TW086115830A TW357433B (en) 1997-06-27 1997-10-27 Semiconductor and manufacturing process
KR1019970066589A KR100257594B1 (ko) 1997-06-27 1997-12-08 반도체 장치 및 그 제조방법
US08/990,285 US6191450B1 (en) 1997-06-27 1997-12-15 Semiconductor device with field shield electrode
FR9800606A FR2765396B1 (fr) 1997-06-27 1998-01-21 Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication
DE19805692A DE19805692C2 (de) 1997-06-27 1998-02-12 Halbleitereinrichtung mit Feldabschirm-Isolationsstruktur und Verfahren zur Herstellung derselben
CN98105764A CN1118868C (zh) 1997-06-27 1998-03-23 半导体器件及其制造方法
FR0101304A FR2803095B1 (fr) 1997-06-27 2001-01-31 Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9171773A JPH1117000A (ja) 1997-06-27 1997-06-27 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1117000A JPH1117000A (ja) 1999-01-22
JPH1117000A5 true JPH1117000A5 (cg-RX-API-DMAC7.html) 2004-10-21

Family

ID=15929421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9171773A Pending JPH1117000A (ja) 1997-06-27 1997-06-27 半導体装置およびその製造方法

Country Status (7)

Country Link
US (1) US6191450B1 (cg-RX-API-DMAC7.html)
JP (1) JPH1117000A (cg-RX-API-DMAC7.html)
KR (1) KR100257594B1 (cg-RX-API-DMAC7.html)
CN (1) CN1118868C (cg-RX-API-DMAC7.html)
DE (1) DE19805692C2 (cg-RX-API-DMAC7.html)
FR (2) FR2765396B1 (cg-RX-API-DMAC7.html)
TW (1) TW357433B (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594779B2 (ja) 1997-06-24 2004-12-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US7163851B2 (en) * 2002-08-26 2007-01-16 International Business Machines Corporation Concurrent Fin-FET and thick-body device fabrication
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
WO2005065385A2 (en) * 2003-12-30 2005-07-21 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2007220755A (ja) * 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法
JP5499455B2 (ja) * 2007-10-22 2014-05-21 株式会社デンソー ＳＯＩ（Ｓｉｌｉｃｏｎｏｎｉｎｓｕｌａｔｏｒ）構造の半導体装置およびその製造方法
DE102009023420B3 (de) * 2009-05-29 2011-01-20 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung (z.B. Doppelgate-Transistor)
AU2010226940C1 (en) * 2010-10-02 2011-07-14 Bui, Dac Thong Mr Auto switch MOS-FET
CN103545194B (zh) * 2013-10-11 2018-03-02 中国电子科技集团公司第十三研究所 射频功率vdmosfet屏蔽栅结构的制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4843023A (en) * 1985-09-25 1989-06-27 Hewlett-Packard Company Process for forming lightly-doped-drain (LDD) without extra masking steps
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
US4786609A (en) * 1987-10-05 1988-11-22 North American Philips Corporation, Signetics Division Method of fabricating field-effect transistor utilizing improved gate sidewall spacers
US4922311A (en) * 1987-12-04 1990-05-01 American Telephone And Telegraph Company Folded extended window field effect transistor
US5304829A (en) * 1989-01-17 1994-04-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
JPH06302779A (ja) 1993-04-09 1994-10-28 Nippon Steel Corp 半導体装置及びその製造方法
JPH07201967A (ja) 1993-12-28 1995-08-04 Nippon Steel Corp 半導体装置の製造方法
JPH07283300A (ja) 1994-04-01 1995-10-27 Nippon Steel Corp 半導体装置及びその製造方法
US5641989A (en) 1994-06-03 1997-06-24 Nippon Steel Corporation Semiconductor device having field-shield isolation structures and a method of making the same
JPH0831928A (ja) 1994-07-12 1996-02-02 Nippon Steel Corp 半導体装置の製造方法
US5640032A (en) 1994-09-09 1997-06-17 Nippon Steel Corporation Non-volatile semiconductor memory device with improved rewrite speed
JPH08162523A (ja) 1994-12-06 1996-06-21 Nippon Steel Corp 半導体装置及びその製造方法
EP0718881B1 (en) 1994-12-20 2003-07-16 STMicroelectronics, Inc. Isolation by active transistors with grounded gates
JPH0927600A (ja) 1995-07-07 1997-01-28 Nippon Steel Corp 半導体装置およびその製造方法
US5783469A (en) * 1996-12-10 1998-07-21 Advanced Micro Devices, Inc. Method for making nitrogenated gate structure for improved transistor performance

Similar Documents

Publication Publication Date Title
JP3609242B2 (ja) トランジスタ電極上にシリサイド層が形成されているｉｃ構造、ｍｏｓトランジスタおよびその製造方法
US7211515B2 (en) Methods of forming silicide layers on source/drain regions of MOS transistors
US5605854A (en) Integrated Ti-W polycide for deep submicron processing
JP2002299608A (ja) 半導体装置及びその製造方法
JPH1050986A (ja) 半導体装置のｍｏｓトランジスター及びその製造方法
US20080258235A1 (en) Manufacturing method of semiconductor device and semiconductor device
US6720226B2 (en) Semiconductor device and method for facticating the same
US6258648B1 (en) Selective salicide process by reformation of silicon nitride sidewall spacers
JP2002231829A (ja) 不揮発性半導体メモリおよびその製造方法
JP3811518B2 (ja) 半導体装置およびその製造方法
US5989965A (en) Nitride overhang structures for the silicidation of transistor electrodes with shallow junction
JPH1187703A (ja) 半導体装置の製造方法
JPH11312791A (ja) 半導体装置の製造方法及び半導体装置
JPH1117000A5 (cg-RX-API-DMAC7.html)
JPH11284179A (ja) 半導体装置およびその製造方法
JP3161408B2 (ja) 半導体装置及びその製造方法
JPH08213610A (ja) 電界効果型半導体装置及びその製造方法
US8076203B2 (en) Semiconductor device and method of manufacturing the same
JPH07273330A (ja) 半導体装置及びその製造方法
JP2830762B2 (ja) 半導体装置の製造方法
JPH07321327A (ja) 半導体装置及びその製造方法
JPH0730104A (ja) 半導体装置及びその製造方法
US7211865B2 (en) Silicided body contact SOI device
JPH11297987A (ja) 半導体装置およびその製造方法
JPH08264771A (ja) 半導体装置及びその製造方法