CN1118868C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1118868C
CN1118868C CN98105764A CN98105764A CN1118868C CN 1118868 C CN1118868 C CN 1118868C CN 98105764 A CN98105764 A CN 98105764A CN 98105764 A CN98105764 A CN 98105764A CN 1118868 C CN1118868 C CN 1118868C
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CN
China
Prior art keywords
film
field
electrode
oxide
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN98105764A
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English (en)
Chinese (zh)
Other versions
CN1204146A (zh
Inventor
前田茂伸
岩松俊明
前川繁登
一法师隆志
山口泰男
平野有一
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1204146A publication Critical patent/CN1204146A/zh
Application granted granted Critical
Publication of CN1118868C publication Critical patent/CN1118868C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN98105764A 1997-06-27 1998-03-23 半导体器件及其制造方法 Expired - Fee Related CN1118868C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP171773/1997 1997-06-27
JP9171773A JPH1117000A (ja) 1997-06-27 1997-06-27 半導体装置およびその製造方法
JP171773/97 1997-06-27

Publications (2)

Publication Number Publication Date
CN1204146A CN1204146A (zh) 1999-01-06
CN1118868C true CN1118868C (zh) 2003-08-20

Family

ID=15929421

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98105764A Expired - Fee Related CN1118868C (zh) 1997-06-27 1998-03-23 半导体器件及其制造方法

Country Status (7)

Country Link
US (1) US6191450B1 (cg-RX-API-DMAC7.html)
JP (1) JPH1117000A (cg-RX-API-DMAC7.html)
KR (1) KR100257594B1 (cg-RX-API-DMAC7.html)
CN (1) CN1118868C (cg-RX-API-DMAC7.html)
DE (1) DE19805692C2 (cg-RX-API-DMAC7.html)
FR (2) FR2765396B1 (cg-RX-API-DMAC7.html)
TW (1) TW357433B (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594779B2 (ja) 1997-06-24 2004-12-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US7163851B2 (en) * 2002-08-26 2007-01-16 International Business Machines Corporation Concurrent Fin-FET and thick-body device fabrication
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
WO2005065385A2 (en) * 2003-12-30 2005-07-21 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2007220755A (ja) * 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法
JP5499455B2 (ja) * 2007-10-22 2014-05-21 株式会社デンソー ＳＯＩ（Ｓｉｌｉｃｏｎｏｎｉｎｓｕｌａｔｏｒ）構造の半導体装置およびその製造方法
DE102009023420B3 (de) * 2009-05-29 2011-01-20 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung (z.B. Doppelgate-Transistor)
AU2010226940C1 (en) * 2010-10-02 2011-07-14 Bui, Dac Thong Mr Auto switch MOS-FET
CN103545194B (zh) * 2013-10-11 2018-03-02 中国电子科技集团公司第十三研究所 射频功率vdmosfet屏蔽栅结构的制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4843023A (en) * 1985-09-25 1989-06-27 Hewlett-Packard Company Process for forming lightly-doped-drain (LDD) without extra masking steps
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
US4786609A (en) * 1987-10-05 1988-11-22 North American Philips Corporation, Signetics Division Method of fabricating field-effect transistor utilizing improved gate sidewall spacers
US4922311A (en) * 1987-12-04 1990-05-01 American Telephone And Telegraph Company Folded extended window field effect transistor
US5304829A (en) * 1989-01-17 1994-04-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
JPH06302779A (ja) 1993-04-09 1994-10-28 Nippon Steel Corp 半導体装置及びその製造方法
JPH07201967A (ja) 1993-12-28 1995-08-04 Nippon Steel Corp 半導体装置の製造方法
JPH07283300A (ja) 1994-04-01 1995-10-27 Nippon Steel Corp 半導体装置及びその製造方法
US5641989A (en) 1994-06-03 1997-06-24 Nippon Steel Corporation Semiconductor device having field-shield isolation structures and a method of making the same
JPH0831928A (ja) 1994-07-12 1996-02-02 Nippon Steel Corp 半導体装置の製造方法
US5640032A (en) 1994-09-09 1997-06-17 Nippon Steel Corporation Non-volatile semiconductor memory device with improved rewrite speed
JPH08162523A (ja) 1994-12-06 1996-06-21 Nippon Steel Corp 半導体装置及びその製造方法
EP0718881B1 (en) 1994-12-20 2003-07-16 STMicroelectronics, Inc. Isolation by active transistors with grounded gates
JPH0927600A (ja) 1995-07-07 1997-01-28 Nippon Steel Corp 半導体装置およびその製造方法
US5783469A (en) * 1996-12-10 1998-07-21 Advanced Micro Devices, Inc. Method for making nitrogenated gate structure for improved transistor performance

Also Published As

Publication number Publication date
FR2765396A1 (fr) 1998-12-31
KR19990006291A (ko) 1999-01-25
FR2803095B1 (fr) 2004-12-10
CN1204146A (zh) 1999-01-06
FR2803095A1 (fr) 2001-06-29
DE19805692C2 (de) 2001-04-26
KR100257594B1 (ko) 2000-06-01
US6191450B1 (en) 2001-02-20
JPH1117000A (ja) 1999-01-22
FR2765396B1 (fr) 2001-06-22
DE19805692A1 (de) 1999-01-07
TW357433B (en) 1999-05-01

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Granted publication date: 20030820