JPH1092714A5 - - Google Patents

Info

Publication number
JPH1092714A5
JPH1092714A5 JP1996240096A JP24009696A JPH1092714A5 JP H1092714 A5 JPH1092714 A5 JP H1092714A5 JP 1996240096 A JP1996240096 A JP 1996240096A JP 24009696 A JP24009696 A JP 24009696A JP H1092714 A5 JPH1092714 A5 JP H1092714A5
Authority
JP
Japan
Prior art keywords
forming
mask
resist pattern
wiring layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP1996240096A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1092714A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8240096A priority Critical patent/JPH1092714A/ja
Priority claimed from JP8240096A external-priority patent/JPH1092714A/ja
Priority to KR1019970003623A priority patent/KR100243361B1/ko
Priority to US08/799,595 priority patent/US6162736A/en
Priority to DE19715730A priority patent/DE19715730A1/de
Publication of JPH1092714A publication Critical patent/JPH1092714A/ja
Priority to US09/609,944 priority patent/US6329306B1/en
Priority to US09/971,641 priority patent/US20020022353A1/en
Publication of JPH1092714A5 publication Critical patent/JPH1092714A5/ja
Ceased legal-status Critical Current

Links

JP8240096A 1996-09-11 1996-09-11 半導体装置およびその製造方法 Ceased JPH1092714A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8240096A JPH1092714A (ja) 1996-09-11 1996-09-11 半導体装置およびその製造方法
KR1019970003623A KR100243361B1 (ko) 1996-09-11 1997-02-05 반도체 장치의 제조방법
US08/799,595 US6162736A (en) 1996-09-11 1997-02-12 Process for fabricating a semiconductor integrated circuit utilizing an exposure method
DE19715730A DE19715730A1 (de) 1996-09-11 1997-04-15 Halbleiterbauelement und Verfahren zu seiner Herstellung
US09/609,944 US6329306B1 (en) 1996-09-11 2000-07-03 Fine patterning utilizing an exposure method in photolithography
US09/971,641 US20020022353A1 (en) 1996-09-11 2001-10-09 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8240096A JPH1092714A (ja) 1996-09-11 1996-09-11 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1092714A JPH1092714A (ja) 1998-04-10
JPH1092714A5 true JPH1092714A5 (enExample) 2004-09-16

Family

ID=17054440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8240096A Ceased JPH1092714A (ja) 1996-09-11 1996-09-11 半導体装置およびその製造方法

Country Status (4)

Country Link
US (3) US6162736A (enExample)
JP (1) JPH1092714A (enExample)
KR (1) KR100243361B1 (enExample)
DE (1) DE19715730A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3363799B2 (ja) * 1998-08-28 2003-01-08 キヤノン株式会社 デバイスの構造部分の配置方法およびデバイス
JP3819711B2 (ja) * 1998-10-23 2006-09-13 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2000277427A (ja) * 1999-03-29 2000-10-06 Canon Inc デバイス製造方法
JP3367460B2 (ja) * 1999-04-09 2003-01-14 日本電気株式会社 半導体装置の製造方法およびこれに用いるフォトマスク
US6664011B2 (en) 2001-12-05 2003-12-16 Taiwan Semiconductor Manufacturing Company Hole printing by packing and unpacking using alternating phase-shifting masks
US6943124B1 (en) 2002-07-17 2005-09-13 Taiwan Semiconductor Manufacturing Company Two step exposure to strengthen structure of polyimide or negative tone photosensitive material
KR100576832B1 (ko) 2004-11-05 2006-05-10 삼성전자주식회사 비대칭 패턴들을 위한 포토 공정의 수행방법들 및 그를이용한 반도체 장치의 형성방법들
JP4698279B2 (ja) * 2005-05-02 2011-06-08 ユニ・チャーム株式会社 清掃具
JP4768469B2 (ja) * 2006-02-21 2011-09-07 株式会社東芝 半導体装置の製造方法
JP4984703B2 (ja) 2006-07-18 2012-07-25 富士通セミコンダクター株式会社 半導体装置の製造方法
US8124326B2 (en) * 2009-03-03 2012-02-28 Micron Technology, Inc. Methods of patterning positive photoresist

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209124A (ja) * 1982-05-31 1983-12-06 Toshiba Corp レジストパタ−ン形成方法
JPH0290509A (ja) * 1988-09-27 1990-03-30 Sanyo Electric Co Ltd 半導体装置の製造方法
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
EP0464492B1 (en) * 1990-06-21 1999-08-04 Matsushita Electronics Corporation A photomask used by photolithography and a process of producing the same
JPH04125938A (ja) * 1990-09-18 1992-04-27 Fujitsu Ltd 電界効果半導体装置およびその製造方法
JPH04158522A (ja) * 1990-10-23 1992-06-01 Fujitsu Ltd 微細なホールパターンを形成する方法
JP3084761B2 (ja) * 1991-02-28 2000-09-04 株式会社ニコン 露光方法及びマスク
DE4115909C1 (enExample) * 1991-05-15 1992-11-12 Siemens Ag, 8000 Muenchen, De
KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
JPH05243114A (ja) * 1992-02-26 1993-09-21 Nec Corp 露光方法
US5329335A (en) * 1992-03-17 1994-07-12 Nippon Steel Corporation Method and apparatus for projection exposure
KR970003593B1 (en) * 1992-09-03 1997-03-20 Samsung Electronics Co Ltd Projection exposure method and device using mask
JPH06151269A (ja) * 1992-11-05 1994-05-31 Fujitsu Ltd 半導体装置の製造方法
US5523258A (en) * 1994-04-29 1996-06-04 Cypress Semiconductor Corp. Method for avoiding lithographic rounding effects for semiconductor fabrication
US5543253A (en) * 1994-08-08 1996-08-06 Electronics & Telecommunications Research Inst. Photomask for t-gate formation and process for fabricating the same
US6043164A (en) * 1996-06-10 2000-03-28 Sharp Laboratories Of America, Inc. Method for transferring a multi-level photoresist pattern
KR100201040B1 (ko) * 1996-08-26 1999-06-15 다니구찌 이찌로오; 기타오카 다카시 위상 쉬프트 마스크 및 그 제조 방법
US5776660A (en) * 1996-09-16 1998-07-07 International Business Machines Corporation Fabrication method for high-capacitance storage node structures

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