JP2001203139A5 - - Google Patents

Download PDF

Info

Publication number
JP2001203139A5
JP2001203139A5 JP2000010715A JP2000010715A JP2001203139A5 JP 2001203139 A5 JP2001203139 A5 JP 2001203139A5 JP 2000010715 A JP2000010715 A JP 2000010715A JP 2000010715 A JP2000010715 A JP 2000010715A JP 2001203139 A5 JP2001203139 A5 JP 2001203139A5
Authority
JP
Japan
Prior art keywords
pattern
resist film
resist
patterns
exposure process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000010715A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001203139A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000010715A priority Critical patent/JP2001203139A/ja
Priority claimed from JP2000010715A external-priority patent/JP2001203139A/ja
Publication of JP2001203139A publication Critical patent/JP2001203139A/ja
Publication of JP2001203139A5 publication Critical patent/JP2001203139A5/ja
Pending legal-status Critical Current

Links

JP2000010715A 2000-01-19 2000-01-19 半導体装置の製造方法 Pending JP2001203139A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000010715A JP2001203139A (ja) 2000-01-19 2000-01-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000010715A JP2001203139A (ja) 2000-01-19 2000-01-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001203139A JP2001203139A (ja) 2001-07-27
JP2001203139A5 true JP2001203139A5 (enExample) 2005-02-10

Family

ID=18538701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000010715A Pending JP2001203139A (ja) 2000-01-19 2000-01-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2001203139A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203993A (ja) 2002-01-10 2003-07-18 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
JP4287166B2 (ja) * 2003-02-14 2009-07-01 大日本印刷株式会社 樹脂ブラックマトリックスの製造方法及びそれに用いるフォトマスク、樹脂ブラックマトリックス、カラーフィルタ及び液晶表示素子
US7507661B2 (en) * 2004-08-11 2009-03-24 Spansion Llc Method of forming narrowly spaced flash memory contact openings and lithography masks
JP4600109B2 (ja) * 2005-03-23 2010-12-15 Tdk株式会社 スタンパーの製造方法および情報記録媒体の製造方法
EP1843202B1 (en) 2006-04-06 2015-02-18 ASML Netherlands B.V. Method for performing dark field double dipole lithography
JP2010040849A (ja) * 2008-08-06 2010-02-18 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
US8795953B2 (en) * 2010-09-14 2014-08-05 Nikon Corporation Pattern forming method and method for producing device
JP6347329B2 (ja) * 2012-10-19 2018-06-27 株式会社ニコン パターン形成方法及びデバイス製造方法
JP5750476B2 (ja) * 2013-07-22 2015-07-22 東京応化工業株式会社 レジストパターン形成方法
JP7289592B2 (ja) * 2019-03-26 2023-06-12 株式会社ディスコ 検査用基板及び検査方法

Similar Documents

Publication Publication Date Title
US6664028B2 (en) Method of forming opening in wafer layer
JP2002122976A5 (enExample)
US20090130601A1 (en) Method for fabricating semiconductor device
CN107490932B (zh) 掩膜版图形的修正方法
JP2001203139A5 (enExample)
JP5979908B2 (ja) フォトマスク及び半導体装置の製造方法
JP2019035874A (ja) 半導体装置の製造方法
KR100944331B1 (ko) 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
JP2002202585A5 (enExample)
US10593551B2 (en) Method to increase the process window in double patterning process
US6455438B1 (en) Fabrication method for a semiconductor device
JPH1092714A5 (enExample)
JP2001110719A5 (enExample)
JP2004012722A (ja) フォトマスク及びパターン作製方法及び半導体装置
US6635388B1 (en) Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask
US6767672B2 (en) Method for forming a phase-shifting mask for semiconductor device manufacture
KR101120167B1 (ko) 반도체 소자의 미세 패턴 형성 방법
KR20110101404A (ko) 반도체 소자의 제조 방법
JP2001201844A5 (enExample)
US20020102469A1 (en) Method for aligning a contact or a line to adjacent phase-shifter on a mask
KR100268425B1 (ko) 마스크 패턴 레이아웃 구조
US20060257795A1 (en) Method for forming composite pattern including different types of patterns
JP2003031479A (ja) 露光方法、マスク
KR950015617A (ko) 반도체소자의 미세패턴 제조방법
KR100436771B1 (ko) 반도체소자의감광막패턴형성방법