KR100243361B1 - 반도체 장치의 제조방법 - Google Patents

반도체 장치의 제조방법 Download PDF

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Publication number
KR100243361B1
KR100243361B1 KR1019970003623A KR19970003623A KR100243361B1 KR 100243361 B1 KR100243361 B1 KR 100243361B1 KR 1019970003623 A KR1019970003623 A KR 1019970003623A KR 19970003623 A KR19970003623 A KR 19970003623A KR 100243361 B1 KR100243361 B1 KR 100243361B1
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KR
South Korea
Prior art keywords
mask
hole
exposure
wiring
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019970003623A
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English (en)
Korean (ko)
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KR19980023940A (ko
Inventor
슈지 나카오
Original Assignee
다니구찌 이찌로오
미쓰비시덴키 가부시키가이샤
기타오카 다카시
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Publication date
Application filed by 다니구찌 이찌로오, 미쓰비시덴키 가부시키가이샤, 기타오카 다카시 filed Critical 다니구찌 이찌로오
Publication of KR19980023940A publication Critical patent/KR19980023940A/ko
Application granted granted Critical
Publication of KR100243361B1 publication Critical patent/KR100243361B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019970003623A 1996-09-11 1997-02-05 반도체 장치의 제조방법 Expired - Fee Related KR100243361B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8240096A JPH1092714A (ja) 1996-09-11 1996-09-11 半導体装置およびその製造方法
JP240096 1996-09-11

Publications (2)

Publication Number Publication Date
KR19980023940A KR19980023940A (ko) 1998-07-06
KR100243361B1 true KR100243361B1 (ko) 2000-03-02

Family

ID=17054440

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970003623A Expired - Fee Related KR100243361B1 (ko) 1996-09-11 1997-02-05 반도체 장치의 제조방법

Country Status (4)

Country Link
US (3) US6162736A (enExample)
JP (1) JPH1092714A (enExample)
KR (1) KR100243361B1 (enExample)
DE (1) DE19715730A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3363799B2 (ja) * 1998-08-28 2003-01-08 キヤノン株式会社 デバイスの構造部分の配置方法およびデバイス
JP3819711B2 (ja) * 1998-10-23 2006-09-13 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2000277427A (ja) * 1999-03-29 2000-10-06 Canon Inc デバイス製造方法
JP3367460B2 (ja) * 1999-04-09 2003-01-14 日本電気株式会社 半導体装置の製造方法およびこれに用いるフォトマスク
US6664011B2 (en) 2001-12-05 2003-12-16 Taiwan Semiconductor Manufacturing Company Hole printing by packing and unpacking using alternating phase-shifting masks
US6943124B1 (en) 2002-07-17 2005-09-13 Taiwan Semiconductor Manufacturing Company Two step exposure to strengthen structure of polyimide or negative tone photosensitive material
KR100576832B1 (ko) 2004-11-05 2006-05-10 삼성전자주식회사 비대칭 패턴들을 위한 포토 공정의 수행방법들 및 그를이용한 반도체 장치의 형성방법들
JP4698279B2 (ja) * 2005-05-02 2011-06-08 ユニ・チャーム株式会社 清掃具
JP4768469B2 (ja) * 2006-02-21 2011-09-07 株式会社東芝 半導体装置の製造方法
JP4984703B2 (ja) 2006-07-18 2012-07-25 富士通セミコンダクター株式会社 半導体装置の製造方法
US8124326B2 (en) * 2009-03-03 2012-02-28 Micron Technology, Inc. Methods of patterning positive photoresist

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290509A (ja) * 1988-09-27 1990-03-30 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH04125938A (ja) * 1990-09-18 1992-04-27 Fujitsu Ltd 電界効果半導体装置およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209124A (ja) * 1982-05-31 1983-12-06 Toshiba Corp レジストパタ−ン形成方法
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
EP0464492B1 (en) * 1990-06-21 1999-08-04 Matsushita Electronics Corporation A photomask used by photolithography and a process of producing the same
JPH04158522A (ja) * 1990-10-23 1992-06-01 Fujitsu Ltd 微細なホールパターンを形成する方法
JP3084761B2 (ja) * 1991-02-28 2000-09-04 株式会社ニコン 露光方法及びマスク
DE4115909C1 (enExample) * 1991-05-15 1992-11-12 Siemens Ag, 8000 Muenchen, De
KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
JPH05243114A (ja) * 1992-02-26 1993-09-21 Nec Corp 露光方法
US5329335A (en) * 1992-03-17 1994-07-12 Nippon Steel Corporation Method and apparatus for projection exposure
KR970003593B1 (en) * 1992-09-03 1997-03-20 Samsung Electronics Co Ltd Projection exposure method and device using mask
JPH06151269A (ja) * 1992-11-05 1994-05-31 Fujitsu Ltd 半導体装置の製造方法
US5523258A (en) * 1994-04-29 1996-06-04 Cypress Semiconductor Corp. Method for avoiding lithographic rounding effects for semiconductor fabrication
US5543253A (en) * 1994-08-08 1996-08-06 Electronics & Telecommunications Research Inst. Photomask for t-gate formation and process for fabricating the same
US6043164A (en) * 1996-06-10 2000-03-28 Sharp Laboratories Of America, Inc. Method for transferring a multi-level photoresist pattern
KR100201040B1 (ko) * 1996-08-26 1999-06-15 다니구찌 이찌로오; 기타오카 다카시 위상 쉬프트 마스크 및 그 제조 방법
US5776660A (en) * 1996-09-16 1998-07-07 International Business Machines Corporation Fabrication method for high-capacitance storage node structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290509A (ja) * 1988-09-27 1990-03-30 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH04125938A (ja) * 1990-09-18 1992-04-27 Fujitsu Ltd 電界効果半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR19980023940A (ko) 1998-07-06
US20020022353A1 (en) 2002-02-21
US6162736A (en) 2000-12-19
DE19715730A1 (de) 1998-03-12
US6329306B1 (en) 2001-12-11
JPH1092714A (ja) 1998-04-10

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